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1. 发明授权

US08094839B2 Microelectromechanical system (MEMS) device with senstivity trimming circuit and trimming process 有权
标题翻译：微机电系统（MEMS）器件具有灵敏度调整电路和修整过程
公开(公告)号：US08094839B2
公开(公告)日：2012-01-10
申请号：US12432758
申请日：2009-04-30
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Shao-Yi Wu
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Shao-Yi Wu
IPC分类号： H03F99/00 , H04R1/00 , H02B1/00 , H03G3/00
CPC分类号： G01H11/06 , H04R1/04 , H04R19/005
摘要： A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.
摘要翻译：微机电系统（MEMS）装置包括连接在电容器偏置电压源和地之间的隔膜电容器。源极跟随器电路耦合到隔膜电容器。放大器耦合到源极跟随器电路，以将电压信号放大为输出电压信号。利用放大器实现可编程微调电路，以减小增益或用电容器偏置电压源来实现，以调节施加在隔膜电容器上的电压。由此，输出电压信号具有目标灵敏度。

2. 发明申请

US20100277229A1 MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE WITH SENSTIVITY TRIMMING CIRCUIT AND TRIMMING PROCESS 有权
标题翻译：微电子机电系统（MEMS）设备，具有传感器线性调整和调整过程
公开(公告)号：US20100277229A1
公开(公告)日：2010-11-04
申请号：US12432758
申请日：2009-04-30
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Shao-Yi Wu
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Shao-Yi Wu
IPC分类号： G05F1/10
CPC分类号： G01H11/06 , H04R1/04 , H04R19/005
摘要： A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.
摘要翻译：微机电系统（MEMS）装置包括连接在电容器偏置电压源和地之间的隔膜电容器。源极跟随器电路耦合到隔膜电容器。放大器耦合到源极跟随器电路，以将电压信号放大为输出电压信号。利用放大器实现可编程微调电路，以减小增益或用电容器偏置电压源来实现，以调节施加在隔膜电容器上的电压。由此，输出电压信号具有目标灵敏度。

3. 发明授权

US08987842B2 Microelectromechanical system (MEMS) device and fabrication method thereof 有权
标题翻译：微机电系统（MEMS）器件及其制造方法
公开(公告)号：US08987842B2
公开(公告)日：2015-03-24
申请号：US13615645
申请日：2012-09-14
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , B81B3/00 , B81B7/00 , B81C1/00
CPC分类号： B81C1/00158 , B81B3/00 , B81B3/0013 , B81B7/00 , B81B2201/0257 , B81C1/00 , B81C1/00952 , H04R19/005 , H04R2201/003
摘要： A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.
摘要翻译： MEMS器件包括硅衬底和结构介电层。硅衬底具有空腔。结构介电层设置在硅衬底上。所述结构介电层在所述硅衬底的空腔上方具有空间，并且在所述空间内保持多个结构元件，所述结构元件包括：在所述硅衬底上的导电背板，具有多个通气孔和顶部的多个突出结构的导电背板; 以及隔膜，位于导电背板上方一段距离处，其中在隔膜和导电背板之间形成腔室，并且通过排气孔与硅衬底的空腔连接。隔膜的第一侧由腔室暴露，并面向导电背板的突出结构，并且隔膜的第二侧暴露于环境空间。

4. 发明申请

US20140077317A1 MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：微电子机电系统（MEMS）器件及其制造方法
公开(公告)号：US20140077317A1
公开(公告)日：2014-03-20
申请号：US13615645
申请日：2012-09-14
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00158 , B81B3/00 , B81B3/0013 , B81B7/00 , B81B2201/0257 , B81C1/00 , B81C1/00952 , H04R19/005 , H04R2201/003
摘要： A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.
摘要翻译： MEMS器件包括硅衬底和结构介电层。硅衬底具有空腔。结构介电层设置在硅衬底上。所述结构介电层在所述硅衬底的空腔上方具有空间，并且在所述空间内保持多个结构元件，所述结构元件包括：在所述硅衬底上的导电背板，具有多个通气孔和顶部的多个突出结构的导电背板; 以及隔膜，位于导电背板上方一定距离处，其中在隔膜和导电背板之间形成腔室，并通过排气孔与硅衬底的空腔连接。隔膜的第一侧由腔室暴露，并面向导电背板的突出结构，并且隔膜的第二侧暴露于环境空间。

5. 发明申请

US20130056841A1 MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：微电子机械系统（MEMS）装置及其制造方法
公开(公告)号：US20130056841A1
公开(公告)日：2013-03-07
申请号：US13224297
申请日：2011-09-01
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00698 , B81C1/00682 , H01G5/18 , H04R19/005 , H04R19/04
摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.
摘要翻译： MEMS器件包括衬底。衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

6. 发明授权

US08093087B2 Method for fabricating MEMS device 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US08093087B2
公开(公告)日：2012-01-10
申请号：US13209461
申请日：2011-08-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.
摘要翻译：制造MEMS器件的方法具有第一表面和第二表面，并且具有MEMS区域和IC区域。在第一表面上形成MEMS结构。在第一表面上形成结构介电层。结构介电层具有电介质构件，并且围绕MEMS结构的空间填充有电介质构件。通过从衬底的第二表面的蚀刻工艺对衬底进行构图，以暴露在围绕MEMS结构的空间中填充的电介质构件的一部分。形成可湿性薄层以覆盖第二表面处的基板的暴露部分。对填充在围绕MEMS结构的空间的电介质构件进行蚀刻处理。通过蚀刻工艺暴露和释放MEMS结构。蚀刻工艺包括具有湿蚀刻剂的各向同性蚀刻工艺。

7. 发明申请

US20110300659A1 METHOD FOR FABRICATING MEMS DEVICE 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US20110300659A1
公开(公告)日：2011-12-08
申请号：US13209461
申请日：2011-08-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/311
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.
摘要翻译：制造MEMS器件的方法具有第一表面和第二表面，并且具有MEMS区域和IC区域。在第一表面上形成MEMS结构。在第一表面上形成结构介电层。结构介电层具有电介质构件，并且围绕MEMS结构的空间填充有电介质构件。通过从衬底的第二表面的蚀刻工艺对衬底进行构图，以暴露在围绕MEMS结构的空间中填充的电介质构件的一部分。形成可湿性薄层以覆盖第二表面处的基板的暴露部分。对填充在围绕MEMS结构的空间的电介质构件进行蚀刻处理。通过蚀刻工艺暴露和释放MEMS结构。蚀刻工艺包括具有湿蚀刻剂的各向同性蚀刻工艺。

8. 发明申请

US20100052082A1 MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) PACKAGE AND METHOD FOR FORMING THE MEMS PACKAGE 有权
标题翻译：微电子机械系统（MEMS）封装和形成MEMS封装的方法
公开(公告)号：US20100052082A1
公开(公告)日：2010-03-04
申请号：US12203151
申请日：2008-09-03
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： B81B7/0061 , B81B2201/0257 , B81B2207/095 , B81B2207/096 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A micro-electro-mechanical systems (MEMS) package includes a MEMS microphone device. The MEMS microphone device has a first substrate and at least a sensing element on the first substrate wherein a first chamber in the MEMS microphone device is connected to the sensing element. A second substrate is disposed over the MEMS microphone device to provide a second chamber in the second substrate over the sensing element opposite to the first chamber.
摘要翻译：微电子机械系统（MEMS）封装包括MEMS麦克风装置。 MEMS麦克风装置具有第一基板和第一基板上的至少一个感测元件，其中MEMS麦克风装置中的第一腔室连接到感测元件。第二基板设置在MEMS麦克风装置上方，以在与第一室相对的感测元件上的第二基板中提供第二室。

9. 发明申请

US20080032470A1 METHOD FOR FABRICATING NON-VOLATILE MEMORY 审中-公开
标题翻译：制造非易失性存储器的方法
公开(公告)号：US20080032470A1
公开(公告)日：2008-02-07
申请号：US11462372
申请日：2006-08-04
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L21/8244
CPC分类号： H01L27/11568 , H01L27/0207 , H01L27/115
摘要： A method for fabricating non-volatile memory on a substrate includes forming a plurality of doped lines in the substrate along a first direction, wherein the doped lines serve as a plurality of bit lines, and portions of each of the doped lines serves as source/drain regions for a plurality of memory cells. A charge storage stacked layer is formed over the substrate, wherein the charge storage stacked layer includes a charge trapping layer. A conductive layer is formed over the charge storage layer. The conductive layer and the charge storage stacked layer are patterned to form a plurality of word lines along a second direction, intersecting with the first directing. The remaining portion of the charge trapping layer is just under the word lines, not covering the isolation region between the word lines.
摘要翻译：用于在衬底上制造非易失性存储器的方法包括沿着第一方向在衬底中形成多个掺杂线，其中掺杂线用作多个位线，并且每个掺杂线的部分用作源极/ 漏极区域用于多个存储单元。电荷存储堆叠层形成在衬底上，其中电荷存储层叠层包括电荷俘获层。在电荷存储层上形成导电层。图案化导电层和电荷存储堆叠层，以沿与第一定向相交的第二方向形成多个字线。电荷俘获层的剩余部分刚好在字线之下，不覆盖字线之间的隔离区域。

10. 发明申请

US20060284234A1 Structure of a non-volatile memory device and operation method 审中-公开
标题翻译：非易失性存储器件的结构和操作方法
公开(公告)号：US20060284234A1
公开(公告)日：2006-12-21
申请号：US11154378
申请日：2005-06-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Chin-Hsi Lin , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Chin-Hsi Lin , Jhyy-Cheng Liou
IPC分类号： H01L29/76
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile memory device, including composite gate structures formed on a substrate in series along a bit line (BL) direction. Each of the composite gate structures has a first storage gate, a second storage gate, and a selection gate between the two storage gates. Each of the composite gate structures is respectively coupled to two world line (WL) connection terminals at the two storage gates and a selection terminal at the selection gate. Each of the storage gates corresponds to a memory bit cell. Multiple doped regions are in the substrate between the composite gate structures. A first selection doped region are formed in the substrate and coupled between a BL connection terminal and a first edge one of the composite gate structure. A second selection doped region is formed in the substrate and coupled between a second edge one of the composite gate structures and a voltage terminal.
摘要翻译：一种非易失性存储器件，包括沿着位线（BL）方向串联形成在衬底上的复合栅极结构。复合栅极结构中的每一个在两个存储栅极之间具有第一存储栅极，第二存储栅极和选择栅极。复合栅极结构中的每一个分别耦合到两个存储栅极处的两个世界线（WL）连接端子和选择栅极处的选择端子。每个存储门对应于存储器位单元。多个掺杂区域在复合栅极结构之间的衬底中。第一选择掺杂区域形成在衬底中并且耦合在BL连接端子和复合栅极结构中的第一边缘之间。第二选择掺杂区域形成在衬底中并且耦合在复合栅极结构之一的第二边缘和电压端子之间。

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