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1. 发明授权

US06682399B1 Pressure monitoring system for chemical-mechanical polishing 有权
标题翻译：化学机械抛光压力监测系统
公开(公告)号：US06682399B1
公开(公告)日：2004-01-27
申请号：US09715656
申请日：2000-11-17
申请人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Kevin Yu
发明人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Kevin Yu
IPC分类号： B24B4900
CPC分类号： B24B37/30 , B24B49/16 , G05D16/2026
摘要： A pressure monitoring system arranged in a close loop circuit, intended to facilitate chemical mechanical polishing (CMP), is disclosed. The pressure monitoring circuit includes an air regulator, a pressure transducer, a pressure difference transducer and a pressure difference regulator. This hardware is equipped to facilitate finding three control parameters of the monitoring system—polishing pressure (Pp), pressure difference of the polishing pressure and a corresponding wafer pressure (Dp), and deviation of the output pressure difference from a set point pressure difference (Cp). By monitoring Pp, Dp and Cp, air streams in a CMP process can be effectively regulated on a real time basis and the troubleshooting procedure for the system hardware can be practically reduced.
摘要翻译：公开了一种布置在闭环回路中的压力监测系统，旨在促进化学机械抛光（CMP）。压力监测电路包括空气调节器，压力传感器，压差传感器和压力差调节器。该硬件配备有助于找到监控系统的三个控制参数 - 抛光压力（Pp），抛光压力的压差和相应的晶片压力（Dp），以及输出压力差与设定点压力差的偏差（ Cp）。通过监控Pp，Dp和Cp，可以实时有效地调节CMP过程中的气流，实际降低系统硬件的故障排除步骤。

2. 发明授权

US06341995B1 Chemical mechanical polishing apparatus 失效
标题翻译：化学机械抛光装置
公开(公告)号：US06341995B1
公开(公告)日：2002-01-29
申请号：US09522488
申请日：2000-03-10
申请人： Chien-Hsin Lai , Juen-Kuen Lin , Jung-Nan Tseng , Huang-Yi Lin , Kevin Yu
发明人： Chien-Hsin Lai , Juen-Kuen Lin , Jung-Nan Tseng , Huang-Yi Lin , Kevin Yu
IPC分类号： B24B4900
CPC分类号： B24B37/11 , B24B41/007 , B24B49/12
摘要： The present invention relates to improved chemical mechanical polishing apparatus, which reduce air sharp pressure on the polish head for preventing the breakage unpolished wafer. The improved chemical mechanical polishing apparatus of present invention is composed of a wafer head, a polish head, a damper and a sensor. The flowing speed of gas is reduced by making the diameter of the gas line connected to the damper air inlet smaller than the diameter of the gas line connected to the damper air outlet. The initial air sharp pressure is reduced and make &Dgr;P=Pwafer−Ppolish
摘要翻译：本发明涉及改进的化学机械抛光装置，其减少抛光头上的空气尖锐压力，以防止未磨光晶片破裂。本发明改进的化学机械抛光装置由晶片头，抛光头，阻尼器和传感器构成。通过使连接到阻尼器空气入口的气体管线的直径小于连接到阻尼器空气出口的气体管线的直径来减小气体的流动速度。通过在入口和出口之间添加空气临时存储机，初始空气急剧压力降低，使DELTAP = Pwafer-Ppolish <0。另外，将传感器放在空气临时存储器下的空气管路上，当浆料由于浆料隔膜的破裂而流入空气管路时，传感器将向改进的化学机械抛光装置的控制系统发送信号，并使相关部件自动停止运转，避免破损。

3. 发明授权

US06676801B2 Pressure suppression device for chemical mechanical polishing machine and method thereof 有权
标题翻译：化学机械抛光机压力抑制装置及其方法
公开(公告)号：US06676801B2
公开(公告)日：2004-01-13
申请号：US09845371
申请日：2001-04-30
申请人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
发明人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
IPC分类号： H01L21302
CPC分类号： B24B37/30 , B24B37/042 , B24B49/16 , H01L21/30625
摘要： A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.
摘要翻译：一种用于化学机械抛光机的压力抑制装置。化学机械抛光机包括抛光台和抛光头。抛光台具有抛光垫和抛光气体输入，通过该抛光气体输入抛光气体。抛光头保持晶片并具有晶片气体输入，晶片气体通过晶片气体输入。压力抑制装置具有联接到晶片气体输入端和压力释放部件的压力释放部件和气体输入管。当施加到抛光垫的抛光压力小于施加到晶片的晶片压力时，压力释放组件释放晶片压力的一部分，直到晶片压力小于抛光压力。结果，这防止了当晶片被太多的晶片压力从抛光头吹出时发生的晶片滑动或破碎的晶片。

4. 发明授权

US06267654B1 Pad backer for polishing head of chemical mechanical polishing machine 有权
标题翻译：化学机械抛光机抛光头垫垫
公开(公告)号：US06267654B1
公开(公告)日：2001-07-31
申请号：US09586301
申请日：2000-06-02
申请人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Hui-Shen Shih
发明人： Chien-Hsin Lai , Jung-Nan Tseng , Huang-Yi Lin , Hui-Shen Shih
IPC分类号： B24B722
CPC分类号： B24B37/26 , B24D9/085
摘要： A pad backer for a polishing head of a chemical mechanical polishing machine is described wherein scribe lines in the x-direction and in the y-direction are formed on the surface of the pad backer. Additional scribe lines are formed at angles of about 45 degrees and about 135 degrees from the x-direction scribe lines to increase the usage rate of the polishing pad.
摘要翻译：描述了用于化学机械抛光机的抛光头的垫衬垫，其中在垫片衬垫的表面上形成了沿x方向和y方向的划线。附加划痕线形成为与x方向划线相距约45度至约135度的角度，以增加抛光垫的使用率。

5. 发明授权

US06648729B2 Wafer pressure regulation system for polishing machine 有权
公开(公告)号：US06648729B2
公开(公告)日：2003-11-18
申请号：US10172308
申请日：2002-06-14
申请人： Chien-Hsin Lai , Cheng-Chi Hsieh , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
发明人： Chien-Hsin Lai , Cheng-Chi Hsieh , Jung-Nan Tseng , Huang-Yi Lin , Fu-Yang Yu
IPC分类号： B25B5100
CPC分类号： B24B37/005 , B24B49/16
摘要： A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.

6. 发明授权

US06416615B1 Device for detecting abnormality in chemical-mechanical polishing operation 失效
标题翻译：用于检测化学机械抛光操作异常的装置
公开(公告)号：US06416615B1
公开(公告)日：2002-07-09
申请号：US09660863
申请日：2000-09-13
申请人： Chien-Hsin Lai , Hui-Shen Shih , Jung-Nan Tseng , Huang-Yi Lin
发明人： Chien-Hsin Lai , Hui-Shen Shih , Jung-Nan Tseng , Huang-Yi Lin
IPC分类号： C23F102
CPC分类号： B24B37/0053 , B24B37/042 , B24B49/16 , H01L21/30625
摘要： A detecting device for monitoring any abnormality in chemical-mechanical polishing. The detecting device includes a motor, an inverter, a control circuit, a rotation sensor, a current sensor, a relay controller and a chemical-mechanical controller. The inverter converts a direct current into an alternating current for driving the motor. The control circuit controls size and functioning of the output alternating current from the inverter. The rotation sensor is a transducer for converting the running speed of the motor into a rotation signal and transmitting the signal to the control circuit. The current sensor monitors the size of the alternating current flowing to the motor and then outputs a current signal. The relay controller receives the current signal from the current sensor and outputs a drive signal. The chemical-mechanical polishing controller receives the drive signal from the relay controller and outputs a system halt signal to the control circuit. The detecting device of this invention is able to detect any serious scratching or chipping of a silicon chip during a chemical-mechanical polishing operation so that the amount of damaged chips is greatly reduced.
摘要翻译：一种用于监测化学机械抛光中的任何异常的检测装置。检测装置包括电机，逆变器，控制电路，旋转传感器，电流传感器，继电器控制器和化学机械控制器。逆变器将直流电转换成用于驱动电动机的交流电。控制电路控制来自逆变器的输出交流电流的大小和功能。旋转传感器是用于将电机的运行速度转换为旋转信号并将信号传输到控制电路的换能器。电流传感器监测流向电动机的交流电流的大小，然后输出电流信号。继电器控制器从电流传感器接收电流信号并输出驱动信号。化学机械抛光控制器接收来自继电器控制器的驱动信号，并向控制电路输出系统停止信号。本发明的检测装置能够在化学机械抛光操作期间检测到硅芯片的任何严重划伤或碎裂，从而大大降低损坏的芯片的数量。

7. 发明申请

US20090032900A1 METHOD OF PROTECTING SHALLOW TRENCH ISOLATION STRUCTURE AND COMPOSITE STRUCTURE RESULTING FROM THE SAME 审中-公开
标题翻译：保护浅层隔离结构及其结构的复合结构的方法
公开(公告)号：US20090032900A1
公开(公告)日：2009-02-05
申请号：US11833789
申请日：2007-08-03
申请人： Yao-Chang Wang , Shih-Chieh Hsu , Chih-Chiang Wu , Huang-Yi Lin , Chi-Hong Pai , Tsung-Wen Chen , Hung-Ling Shih
发明人： Yao-Chang Wang , Shih-Chieh Hsu , Chih-Chiang Wu , Huang-Yi Lin , Chi-Hong Pai , Tsung-Wen Chen , Hung-Ling Shih
IPC分类号： H01L29/00 , H01L21/762
CPC分类号： H01L21/3043 , H01L21/76224
摘要： A method of protecting a shallow trench isolation structure is described, which is applied to a semiconductor device process that includes a first process causing a recess in the STI structure and a second process after the first process. The method includes forming a silicon nitride layer in the recess along the profile of the same during the second process.
摘要翻译：描述了保护浅沟槽隔离结构的方法，其应用于半导体器件工艺，该半导体器件工艺包括引起STI结构中的凹部的第一工艺和在第一工艺之后的第二工艺。该方法包括在第二工艺期间沿其轮廓在凹槽中形成氮化硅层。

8. 发明申请

US20110076823A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110076823A1
公开(公告)日：2011-03-31
申请号：US12568657
申请日：2009-09-28
申请人： Huang-Yi Lin , Jiun-Hung Shen , Chi-Horn Pai , Yi-Chung Sheng , Shih-Chieh Hsu
发明人： Huang-Yi Lin , Jiun-Hung Shen , Chi-Horn Pai , Yi-Chung Sheng , Shih-Chieh Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L29/6656 , H01L29/6659 , H01L29/7847
摘要： A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.
摘要翻译：提供了制造半导体MOS器件的方法。在基板上形成栅极结构。源极和漏极形成在栅极结构两侧的衬底中。然后将基材进行预非晶化植入（PAI）工艺。然后在衬底上形成过渡应力层。此后，进行具有第一温度的激光退火。在激光退火之后，以低于第一温度的第二温度进行快速热处理。随后，去除过渡应力层。

9. 发明授权

US08207043B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08207043B2
公开(公告)日：2012-06-26
申请号：US12568657
申请日：2009-09-28
申请人： Huang-Yi Lin , Jiun-Hung Shen , Chi-Horn Pai , Yi-Chung Sheng , Shih-Chieh Hsu
发明人： Huang-Yi Lin , Jiun-Hung Shen , Chi-Horn Pai , Yi-Chung Sheng , Shih-Chieh Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L29/6656 , H01L29/6659 , H01L29/7847
摘要： A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.
摘要翻译：提供了制造半导体MOS器件的方法。在基板上形成栅极结构。源极和漏极形成在栅极结构两侧的衬底中。然后将基材进行预非晶化植入（PAI）工艺。然后在衬底上形成过渡应力层。此后，进行具有第一温度的激光退火。在激光退火之后，以低于第一温度的第二温度进行快速热处理。随后，去除过渡应力层。

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