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1. 发明授权

US08981527B2 Resistor and manufacturing method thereof 有权
标题翻译：电阻及其制造方法
公开(公告)号：US08981527B2
公开(公告)日：2015-03-17
申请号：US13215237
申请日：2011-08-23
申请人： Jie-Ning Yang , Shih-Chieh Hsu , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng , Kun-Szu Tseng , Ying-Hung Chou , Chiu-Hsien Yeh
发明人： Jie-Ning Yang , Shih-Chieh Hsu , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng , Kun-Szu Tseng , Ying-Hung Chou , Chiu-Hsien Yeh
IPC分类号： H01L21/8234 , H01L49/02 , H01L27/06
CPC分类号： H01L28/20 , H01L27/0629
摘要： A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at two opposite ends in the resistor region, performing an etching process to remove the polysilicon dummy gate to form a first trench and remove portions of the doped regions to form two second trenches, and forming a metal gate in the first trench to form a transistor having the metal gate and metal structures respectively in the second trenches to form a resistor.
摘要翻译：一种用于形成与具有金属栅极的晶体管集成的电阻器的方法包括提供具有限定在其上的晶体管区域和电阻器区域的衬底，在晶体管区域中形成具有多晶硅虚拟栅极的晶体管，以及多晶硅主体部分，其中两个掺杂区域在电阻器区域的两个相对端处，执行蚀刻工艺以去除多晶硅虚拟栅极以形成第一沟槽并去除掺杂区域的部分以形成两个第二沟槽，并且在第一沟槽中形成金属栅极以形成晶体管在第二沟槽中分别具有金属栅极和金属结构以形成电阻器。

2. 发明申请

US20130241002A1 RESISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电阻及其制造方法
公开(公告)号：US20130241002A1
公开(公告)日：2013-09-19
申请号：US13419437
申请日：2012-03-14
申请人： Chun-Mao Chiou , Ti-Bin Chen , Tsung-Min Kuo , Shyan-Liang Chou , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang , Po-Jui Liao
发明人： Chun-Mao Chiou , Ti-Bin Chen , Tsung-Min Kuo , Shyan-Liang Chou , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang , Po-Jui Liao
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： H01L27/0629
摘要： A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is positioned in the transistor region and a resistor is positioned in the resistor region; forming a dielectric layer exposing tops of the transistor and the resistor on the substrate; performing a first etching process to remove portions of the resistor to form two first trenches respectively at two opposite ends of the resistor; forming a patterned protecting layer in the resistor region; performing a second etching process to remove a dummy gate of the transistor to form a second trench in the transistor region; and forming a metal layer filling the first trenches and the second trench.
摘要翻译：一种制造与具有金属栅极的晶体管集成的电阻器的方法包括提供具有晶体管区域和限定在其上的电阻器区域的衬底，晶体管位于晶体管区域中，并且电阻器位于电阻器区域中; 形成暴露所述晶体管顶部和所述基板上的所述电阻器的电介质层; 执行第一蚀刻工艺以去除电阻器的部分以分别在电阻器的两个相对端处形成两个第一沟槽; 在所述电阻器区域中形成图案化保护层; 执行第二蚀刻工艺以去除晶体管的伪栅极以在晶体管区域中形成第二沟槽; 以及形成填充所述第一沟槽和所述第二沟槽的金属层。

3. 发明授权

US08477006B2 Resistor and manufacturing method thereof 有权
标题翻译：电阻及其制造方法
公开(公告)号：US08477006B2
公开(公告)日：2013-07-02
申请号：US13220721
申请日：2011-08-30
申请人： Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
发明人： Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
IPC分类号： H01C1/012
CPC分类号： H01L28/20 , H01L27/0629 , H01L29/66545
摘要： A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
摘要翻译：一种与具有金属栅极的晶体管集成的电阻器的制造方法，包括：提供具有晶体管区域和限定在其上的电阻器区域的衬底，分别形成晶体管区域中具有伪栅极的晶体管和电阻器区域中的电阻器，虚拟栅极和电阻器的部分，以在晶体管中形成第一沟槽，并且在电阻器中形成两个第二沟槽，在第一沟槽和第二沟槽中形成至少一个高k栅介质层，并在第一沟槽和第二沟槽中形成金属栅极沟槽和金属结构分别在第二沟槽。

4. 发明申请

US20130049924A1 RESISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电阻及其制造方法
公开(公告)号：US20130049924A1
公开(公告)日：2013-02-28
申请号：US13220721
申请日：2011-08-30
申请人： Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
发明人： Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
IPC分类号： H01C7/00 , H01L21/02
CPC分类号： H01L28/20 , H01L27/0629 , H01L29/66545
摘要： A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
摘要翻译：一种与具有金属栅极的晶体管集成的电阻器的制造方法，包括：提供具有晶体管区域和限定在其上的电阻器区域的衬底，分别形成晶体管区域中具有伪栅极的晶体管和电阻器区域中的电阻器，虚拟栅极和电阻器的部分，以在晶体管中形成第一沟槽，并且在电阻器中形成两个第二沟槽，在第一沟槽和第二沟槽中形成至少一个高k栅介质层，并在第一沟槽和第二沟槽中形成金属栅极沟槽和金属结构分别在第二沟槽。

5. 发明授权

US08710593B2 Resistor and manufacturing method thereof 有权
标题翻译：电阻及其制造方法
公开(公告)号：US08710593B2
公开(公告)日：2014-04-29
申请号：US13444851
申请日：2012-04-12
申请人： Chi-Sheng Tseng , Yao-Chang Wang , Jie-Ning Yang
发明人： Chi-Sheng Tseng , Yao-Chang Wang , Jie-Ning Yang
IPC分类号： H01L27/11
CPC分类号： H01L28/24 , H01L27/0629
摘要： A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor, a transitional structure, and a dielectric layer covering the transistor and the transitional structure formed thereon, forming a recess in between two opposite polysilicon end portions in the transitional structure, forming a U-shaped resistance modulating layer and an insulating layer filling the recess, removing a dummy gate of the transistor and the polysilicon end portions of the transitional structure to form a gate trench and two terminal trenches respectively in the transistor and the transitional structure, and forming a metal gate in the gate trench and conductive terminals in the terminal trenches simultaneously.
摘要翻译：一种与具有金属栅极的晶体管集成的电阻器的制造方法，包括：提供具有晶体管的基板，过渡结构以及覆盖晶体管的过渡结构的介电层和在其上形成的过渡结构，在两个相对的多晶硅端部之间形成凹部过渡结构，形成U形电阻调制层和填充凹槽的绝缘层，去除晶体管的虚拟栅极和过渡结构的多晶硅端部分别在晶体管中形成栅极沟槽和两个端子沟槽，以及过渡结构，并且在栅极沟槽中形成金属栅极和端子沟槽中的导电端子。

6. 发明申请

US20130270650A1 RESISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电阻及其制造方法
公开(公告)号：US20130270650A1
公开(公告)日：2013-10-17
申请号：US13444851
申请日：2012-04-12
申请人： Chi-Sheng Tseng , Yao-Chang Wang , Jie-Ning Yang
发明人： Chi-Sheng Tseng , Yao-Chang Wang , Jie-Ning Yang
IPC分类号： H01L27/13 , H01L21/02
CPC分类号： H01L28/24 , H01L27/0629
摘要： A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor, a transitional structure, and a dielectric layer covering the transistor and the transitional structure formed thereon, forming a recess in between two opposite polysilicon end portions in the transitional structure, forming a U-shaped resistance modulating layer and an insulating layer filling the recess, removing a dummy gate of the transistor and the polysilicon end portions of the transitional structure to form a gate trench and two terminal trenches respectively in the transistor and the transitional structure, and forming a metal gate in the gate trench and conductive terminals in the terminal trenches simultaneously.
摘要翻译：一种与具有金属栅极的晶体管集成的电阻器的制造方法，包括：提供具有晶体管的基板，过渡结构以及覆盖晶体管的过渡结构的介电层和在其上形成的过渡结构，在两个相对的多晶硅端部之间形成凹部过渡结构，形成U形电阻调制层和填充凹槽的绝缘层，去除晶体管的虚拟栅极和过渡结构的多晶硅端部分别在晶体管中形成栅极沟槽和两个端子沟槽，以及过渡结构，并且在栅极沟槽中形成金属栅极和端子沟槽中的导电端子。

7. 发明申请

US20110059560A1 Organic Electroluminescence Pixel, Organic Electroluminescence Device, and Manufacturing Method Thereof 审中-公开
标题翻译：有机电致发光像素，有机电致发光器件及其制造方法
公开(公告)号：US20110059560A1
公开(公告)日：2011-03-10
申请号：US12948011
申请日：2010-11-17
申请人： Chieh-Wei Chen , Yao Chang Wang , Shi-Hao Li
发明人： Chieh-Wei Chen , Yao Chang Wang , Shi-Hao Li
IPC分类号： H01L21/28
CPC分类号： H01L51/5265 , H01L51/5088
摘要： An organic electroluminescence pixel, an organic electroluminescence device comprising the same, and method for manufacturing the organic electroluminescence device are provided. The organic electroluminescence pixel comprises a substrate, a first electrode, a first carrier-injection layer, a semi-trans-flective metal layer, an organic emitting layer, and a second electrode. The first electrode is formed on the substrate. The first carrier-injection layer, the semi-trans-flective metal layer, and the organic emitting layer are formed between the first electrode and the second electrode. At least one of the first electrode and the second electrode comprises a transparent electrode.
摘要翻译：提供了一种有机电致发光像素，包含该有机电致发光器件的有机电致发光器件及其制造方法。有机电致发光像素包括基板，第一电极，第一载流子注入层，半反射金属层，有机发光层和第二电极。第一电极形成在基板上。第一载流子注入层，半反式金属层和有机发光层形成在第一电极和第二电极之间。第一电极和第二电极中的至少一个包括透明电极。

8. 发明申请

US20080272991A1 Organic Electroluminescence Pixel, Organic Electroluminescence Device, and Manufacturing Method Thereof 有权
标题翻译：有机电致发光像素，有机电致发光器件及其制造方法
公开(公告)号：US20080272991A1
公开(公告)日：2008-11-06
申请号：US11838987
申请日：2007-08-15
申请人： Chieh-Wei Chen , Yao Chang Wang , Shi-Hao Li
发明人： Chieh-Wei Chen , Yao Chang Wang , Shi-Hao Li
IPC分类号： G09G3/30
CPC分类号： H01L51/5265 , H01L51/5088
摘要： An organic electroluminescence pixel, an organic electroluminescence device comprising the same, and method for manufacturing the organic electroluminescence device are provided. The organic electroluminescence pixel comprises a substrate, a first electrode, a first carrier-injection layer, a semi-trans-flective metal layer, an organic emitting layer, and a second electrode. The first electrode is formed on the substrate. The first carrier-injection layer, the semi-trans-flective metal layer, and the organic emitting layer are formed between the first electrode and the second electrode. At least one of the first electrode and the second electrode comprises a transparent electrode.
摘要翻译：提供了一种有机电致发光像素，包含该有机电致发光器件的有机电致发光器件及其制造方法。有机电致发光像素包括基板，第一电极，第一载流子注入层，半反射金属层，有机发光层和第二电极。第一电极形成在基板上。第一载流子注入层，半反式金属层和有机发光层形成在第一电极和第二电极之间。第一电极和第二电极中的至少一个包括透明电极。

9. 发明授权

US08524556B1 Resistor and manufacturing method thereof 有权
标题翻译：电阻及其制造方法
公开(公告)号：US08524556B1
公开(公告)日：2013-09-03
申请号：US13419437
申请日：2012-03-14
申请人： Chun-Mao Chiou , Ti-Bin Chen , Tsung-Min Kuo , Shyan-Liang Chou , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang , Po-Jui Liao
发明人： Chun-Mao Chiou , Ti-Bin Chen , Tsung-Min Kuo , Shyan-Liang Chou , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang , Po-Jui Liao
IPC分类号： H01L21/8234
CPC分类号： H01L27/0629
摘要： A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is positioned in the transistor region and a resistor is positioned in the resistor region; forming a dielectric layer exposing tops of the transistor and the resistor on the substrate; performing a first etching process to remove portions of the resistor to form two first trenches respectively at two opposite ends of the resistor; forming a patterned protecting layer in the resistor region; performing a second etching process to remove a dummy gate of the transistor to form a second trench in the transistor region; and forming a metal layer filling the first trenches and the second trench.
摘要翻译：一种制造与具有金属栅极的晶体管集成的电阻器的方法包括提供具有晶体管区域和限定在其上的电阻器区域的衬底，晶体管位于晶体管区域中，并且电阻器位于电阻器区域中; 形成暴露所述晶体管顶部和所述基板上的所述电阻器的电介质层; 执行第一蚀刻工艺以去除电阻器的部分以分别在电阻器的两个相对端处形成两个第一沟槽; 在所述电阻器区域中形成图案化保护层; 执行第二蚀刻工艺以去除晶体管的伪栅极以在晶体管区域中形成第二沟槽; 以及形成填充所述第一沟槽和所述第二沟槽的金属层。

10. 发明申请

US20130102145A1 METAL GATE PROCESS 有权
标题翻译：金属门过程
公开(公告)号：US20130102145A1
公开(公告)日：2013-04-25
申请号：US13279355
申请日：2011-10-24
申请人： Kuang-Hung Huang , Po-Jui Liao , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang
发明人： Kuang-Hung Huang , Po-Jui Liao , Yao-Chang Wang , Chi-Sheng Tseng , Jie-Ning Yang
IPC分类号： H01L21/28
CPC分类号： H01L21/823842 , H01L21/32139 , H01L29/4966 , H01L29/66545
摘要： A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess but exposing a top part of the first recess. The first metal layer in the top part of the first recess and in the second recess is simultaneously removed. The material is removed. A second metal layer and a metal gate layer in the first recess and the second recess are sequentially filled.
摘要翻译：金属浇口工艺包括以下步骤。提供了衬底上的隔离层，隔离层具有第一凹部和第二凹部。形成覆盖第一凹部和第二凹部的第一金属层。材料填充在第一凹部中，但是露出第一凹部的顶部。第一凹部的顶部和第二凹部中的第一金属层被同时移除。材料被去除。顺序地填充第一凹槽和第二凹槽中的第二金属层和金属栅极层。

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