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    • 6. 发明申请
    • LIGHT-EMITTING DEVICE
    • 发光装置
    • US20110254046A1
    • 2011-10-20
    • US13174183
    • 2011-06-30
    • Chia-Liang HsuChih-Chiang LuChien-Fu HuangChun-Yi Wu
    • Chia-Liang HsuChih-Chiang LuChien-Fu HuangChun-Yi Wu
    • H01L33/62
    • H01L33/385H01L24/24H01L24/82H01L33/20H01L33/32H01L33/486H01L33/62H01L2924/12041H01L2924/00
    • The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
    • 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件,其包括以下元件:导电衬底包括通孔,设置在衬底的第一表面上的图案化半导体结构,第一焊盘和第二焊盘 设置在所述基板的第二表面上,穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件,其包括以下元件:衬底包括第一倾斜侧壁,设置在衬底的第一表面上的图案化半导体结构,第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。
    • 7. 发明申请
    • OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    • 光电器件及其制造方法
    • US20110193119A1
    • 2011-08-11
    • US13021307
    • 2011-02-04
    • Shih-I CHENChia-Liang HSUTzu-Chieh HSUChun-Yi WUChien-Fu HUANG
    • Shih-I CHENChia-Liang HSUTzu-Chieh HSUChun-Yi WUChien-Fu HUANG
    • H01L33/58H01L33/60
    • H01L33/46H01L33/22H01L33/42H01L33/44
    • One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
    • 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度; 具有第二薄层电阻,第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料,并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层,其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层,从而形成窗口层和半导体系统之间的宽度差,并且宽度差异大于1微米。
    • 9. 发明申请
    • METHOD AND SYSTEM FOR ADAPTIVELY FINDING REFERENCE VOLTAGES FOR READING DATA FROM A MLC FLASH MEMORY
    • 用于自适应地找到用于从MLC闪存存储器读取数据的参考电压的方法和系统
    • US20100290282A1
    • 2010-11-18
    • US12464240
    • 2009-05-12
    • Chien-Fu HuangMing-Hung ChouHan-Lung HuangShih-Keng Cho
    • Chien-Fu HuangMing-Hung ChouHan-Lung HuangShih-Keng Cho
    • G11C16/04G11C16/06
    • G11C11/5642G11C2211/5621G11C2211/5634
    • A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.
    • 公开了一种用于自适应地寻找用于从多电平单元(MLC)闪速存储器读取数据的参考电压的方法和系统。 根据一个实施例,首先提供关于初始阈值电压分布的信息。 初始阈值电压分布中的第一阈值电压然后与移位的阈值电压分布中的第二阈值电压相关联,以使得与第一阈值电压对应的信息接近于与第二阈值电压对应的信息。 因此,初始阈值电压分布的初始参考电压或电压以接近于第一阈值电压和第二阈值电压之间的差值的量移动,由此导致用于从MLC闪速存储器读取数据的新参考电压或电压。