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    • 8. 发明申请
    • OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    • 光电器件及其制造方法
    • US20110193119A1
    • 2011-08-11
    • US13021307
    • 2011-02-04
    • Shih-I CHENChia-Liang HSUTzu-Chieh HSUChun-Yi WUChien-Fu HUANG
    • Shih-I CHENChia-Liang HSUTzu-Chieh HSUChun-Yi WUChien-Fu HUANG
    • H01L33/58H01L33/60
    • H01L33/46H01L33/22H01L33/42H01L33/44
    • One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
    • 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度; 具有第二薄层电阻,第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料,并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层,其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层,从而形成窗口层和半导体系统之间的宽度差,并且宽度差异大于1微米。
    • 10. 发明申请
    • LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 发光装置及其制造方法
    • US20120146087A1
    • 2012-06-14
    • US13403334
    • 2012-02-23
    • Chia-Liang HSU
    • Chia-Liang HSU
    • H01L33/26H01L33/36H01L33/00
    • H01L33/0079H01L33/025
    • A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.
    • 公开了一种发光器件。 发光装置包括衬底,衬底上的离子注入层,设置在离子注入层上的发光层,以及将衬底与发光层叠层连接的粘合剂层,其中粘合层包括 设置在离子注入层和发光层之间的薄硅膜。 本发明还公开了一种制造发光器件的方法,包括以下步骤:形成发光叠层,在发光叠层上形成薄硅膜,提供衬底,在衬底上形成离子注入层 并且提供电极电位差以在薄硅膜和离子注入层之间形成氧化物层。