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1. 发明授权

US09269612B2 Mechanisms of forming damascene interconnect structures 有权
标题翻译：形成镶嵌互连结构的机制
公开(公告)号：US09269612B2
公开(公告)日：2016-02-23
申请号：US13434691
申请日：2012-03-29
申请人： Chien-An Chen , Wen-Jiun Liu , Chun-Chieh Lin , Hung-Wen Su , Ming-Hsing Tsai , Syun-Ming Jang
发明人： Chien-An Chen , Wen-Jiun Liu , Chun-Chieh Lin , Hung-Wen Su , Ming-Hsing Tsai , Syun-Ming Jang
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/76802 , H01L21/76819 , H01L21/76834 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76864 , H01L21/76882 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure includes a first trench and a second trench. The second trench is wider than the first trench. Both trenches are lined with a diffusion barrier layer, and a first conductive layer is deposited over the diffusion barrier layer. A metal cap layer is deposited over the first conductive layer. A second conductive layer is deposited over the metal cap layer in the second trench.
摘要翻译：互连结构包括第一沟槽和第二沟槽。第二沟槽比第一沟槽宽。这两个沟槽都带有扩散阻挡层，并且第一导电层沉积在扩散阻挡层上。在第一导电层上沉积金属覆盖层。第二导电层沉积在第二沟槽中的金属覆盖层上。

2. 发明授权

US06620725B1 Reduction of Cu line damage by two-step CMP 有权
标题翻译：通过两步CMP减少Cu线损伤
公开(公告)号：US06620725B1
公开(公告)日：2003-09-16
申请号：US09395287
申请日：1999-09-13
申请人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
发明人： Shau-Lin Shue , Ming-Hsing Tsai , Wen-Jye Tsai , Ying-Ho Chen , Tsu Shih , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.
摘要翻译：描述用于在两个步骤中执行CMP的过程。在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。

3. 发明申请

US20100230816A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20100230816A1
公开(公告)日：2010-09-16
申请号：US12787559
申请日：2010-05-26
申请人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
发明人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/528 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76834 , H01L21/7684 , H01L21/76843 , H01L21/76856 , H01L21/76888 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.
摘要翻译：提供了可以减少或甚至防止对其中低k电介质层的损坏的用于形成其的半导体器件及其制造方法。提供了一种半导体器件，包括衬底。其中具有至少一个导电特征的电介质层覆盖在衬底上。绝缘覆盖层覆盖邻近导电特征的低k电介质层的顶表面，其中绝缘帽层包括金属离子。

4. 发明授权

US07597787B2 Methods and apparatuses for electrochemical deposition 有权
标题翻译：电化学沉积的方法和装置
公开(公告)号：US07597787B2
公开(公告)日：2009-10-06
申请号：US11072137
申请日：2005-03-04
申请人： Hung-Wen Su , Ming-Hsing Tsai
发明人： Hung-Wen Su , Ming-Hsing Tsai
IPC分类号： C25D3/06
CPC分类号： C25D17/001 , C25D17/005 , H01L21/2885 , H01L21/76841
摘要： Methods and apparatuses for electrochemically depositing a metal layer onto a substrate. An electrochemical deposition apparatus comprises a substrate holder assembly including a substrate chuck and a relatively soft cathode contact ring. The cathode contact ring comprises an inner portion and an outer portion, wherein the inner portion directly contacts the substrate. An anode is disposed in an electrolyte container. A power supply connects the substrate holder assembly and the anode.
摘要翻译：将金属层电化学沉积到基底上的方法和装置。一种电化学沉积设备包括一个衬底保持器组件，该衬底保持器组件包括衬底卡盘和相对软的阴极接触环阴极接触环包括内部部分和外部部分，其中内部部分直接接触基板。阳极设置在电解质容器中。电源连接衬底保持器组件和阳极。

5. 发明授权

US07226860B2 Method and apparatus for fabricating metal layer 有权
公开(公告)号：US07226860B2
公开(公告)日：2007-06-05
申请号：US10833154
申请日：2004-04-28
申请人： Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
发明人： Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
IPC分类号： H01L21/44
CPC分类号： H01L21/2885 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76877
摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

6. 发明申请

US20070052096A1 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US20070052096A1
公开(公告)日：2007-03-08
申请号：US11210226
申请日：2005-08-23
申请人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
发明人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
IPC分类号： H01L21/4763
CPC分类号： H01L23/528 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76834 , H01L21/7684 , H01L21/76843 , H01L21/76856 , H01L21/76888 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.
摘要翻译：提供了可以减少或甚至防止对其中低k电介质层的损坏的用于形成其的半导体器件及其制造方法。提供了一种半导体器件，包括衬底。其中具有至少一个导电特征的电介质层覆盖在衬底上。绝缘覆盖层覆盖邻近导电特征的低k电介质层的顶表面，其中绝缘帽层包括金属离子。

7. 发明授权

US09123781B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US09123781B2
公开(公告)日：2015-09-01
申请号：US12787559
申请日：2010-05-26
申请人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
发明人： Hung-Wen Su , Shih-Wei Chou , Ming-Hsing Tsai
IPC分类号： H01L21/00 , H01L21/768 , H01L21/285
CPC分类号： H01L23/528 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76834 , H01L21/7684 , H01L21/76843 , H01L21/76856 , H01L21/76888 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions.
摘要翻译：提供了可以减少或甚至防止对其中低k电介质层的损坏的用于形成其的半导体器件及其制造方法。提供了一种半导体器件，包括衬底。其中具有至少一个导电特征的电介质层覆盖在衬底上。绝缘覆盖层覆盖邻近导电特征的低k电介质层的顶表面，其中绝缘帽层包括金属离子。

8. 发明授权

US07476306B2 Method and apparatus for electroplating 有权
标题翻译：电镀方法和装置
公开(公告)号：US07476306B2
公开(公告)日：2009-01-13
申请号：US10814175
申请日：2004-04-01
申请人： Hung-Wen Su , Chien-Hsueh Shih , Ming-Hsing Tsai
发明人： Hung-Wen Su , Chien-Hsueh Shih , Ming-Hsing Tsai
IPC分类号： C25D17/02
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/02 , C25D21/02
摘要： Apparatus and method for metal electroplating. The apparatus for metal electroplating includes an electroplating tank for containing an electrolyte at a first temperature, a substrate holder for holding a semiconductor substrate, and a heater for heating the portion of the electrolyte adjacent to the substrate holder to a second temperature higher than the first temperature.
摘要翻译：金属电镀设备及方法用于金属电镀的设备包括用于在第一温度下容纳电解质的电镀槽，用于保持半导体衬底的衬底保持器和用于将邻近衬底保持器的部分电解质加热至高于第一温度的第二温度的加热器温度。

9. 发明授权

US07312531B2 Semiconductor device and fabrication method thereof 有权
公开(公告)号：US07312531B2
公开(公告)日：2007-12-25
申请号：US11261200
申请日：2005-10-28
申请人： Hui-Lin Chang , Yung-Cheng Lu , Chung-Chi Ko , Pi-Tsung Chen , Shau-Lin Shue , Chien-Hsueh Shih , Hung-Wen Su , Ming-Hsing Tsai
发明人： Hui-Lin Chang , Yung-Cheng Lu , Chung-Chi Ko , Pi-Tsung Chen , Shau-Lin Shue , Chien-Hsueh Shih , Hung-Wen Su , Ming-Hsing Tsai
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L23/53276 , H01L21/76849 , H01L21/76852 , H01L21/76879 , H01L21/76885 , H01L23/5226 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods for fabricating the same. The devices include a substrate, a catalyst layer, a second dielectric layer, and carbon nanotubes (CNTs). The substrate comprises an overlying first dielectric layer with an electrode embedded therein. The catalyst layer overlies the electrode and the first dielectric layer and substantially comprises Co and M1, wherein M1 is selected from a group consisting of W, P, B, Bi, Ni, and a combination thereof. The second dielectric layer overlies the catalyst layer and comprises an opening exposing parts of the catalyst layer. The carbon nanotubes (CNTs) are disposed on the exposed catalyst layer and electrically connect the electrode.

10. 发明申请

US20070181434A1 Method and apparatus for fabricating metal layer 审中-公开
标题翻译：金属层制造方法及装置
公开(公告)号：US20070181434A1
公开(公告)日：2007-08-09
申请号：US11783245
申请日：2007-04-06
申请人： Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
发明人： Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
IPC分类号： C25D5/34 , H01L21/44 , C25D3/38
CPC分类号： H01L21/2885 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76877
摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.
摘要翻译：电化学沉积（ECD）的方法在衬底上提供阻挡层和种子层。在将金属层电化学沉积在具有物理或化学表面处理工艺的电化学镀覆电池中之前，对基板的表面进行预处理。电化学镀覆电池被盖覆盖以防止电解质溶液的蒸发。电化学电镀单元包括具有提升密封件的衬底保持器组件，例如在提升密封件和衬底之间的接触角θ小于90°。衬底保持器组件包括在衬底的后侧的衬底卡盘。

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