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1. 发明申请

US20050282395A1 Method for forming an improved low power SRAM contact 有权
标题翻译：形成改进的低功率SRAM触点的方法
公开(公告)号：US20050282395A1
公开(公告)日：2005-12-22
申请号：US10871102
申请日：2004-06-16
申请人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
发明人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
IPC分类号： H01L21/027 , H01L21/302 , H01L21/311 , H01L21/8244 , H01L27/11
CPC分类号： H01L21/31116 , H01L21/0276 , H01L27/11 , H01L27/1104
摘要： A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said BARC layer; and, forming at least a first contact opening exposing said etch stop layer by a first etching process.
摘要翻译：一种在半导体器件中形成接触开口的方法，包括提供半导体衬底; 在所述半导体衬底上形成蚀刻停止层; 在所述蚀刻停止层上形成介电层; 在所述介电层上形成底部抗反射涂层（BARC）; 在所述BARC层上形成和图案化掩模; 并且形成至少第一接触开口，通过第一蚀刻工艺暴露所述蚀刻停止层。

2. 发明申请

US20070205414A1 Method for forming an improved low power SRAM contact 失效
标题翻译：形成改进的低功率SRAM触点的方法
公开(公告)号：US20070205414A1
公开(公告)日：2007-09-06
申请号：US11800503
申请日：2007-05-07
申请人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
发明人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
IPC分类号： H01L27/108
CPC分类号： H01L21/31116 , H01L21/0276 , H01L27/11 , H01L27/1104
摘要： A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said BARC layer; and, forming at least a first contact opening exposing said etch stop layer by a first etching process.
摘要翻译：一种在半导体器件中形成接触开口的方法，包括提供半导体衬底; 在所述半导体衬底上形成蚀刻停止层; 在所述蚀刻停止层上形成介电层; 在所述介电层上形成底部抗反射涂层（BARC）; 在所述BARC层上形成和图案化掩模; 并且形成至少第一接触开口，通过第一蚀刻工艺暴露所述蚀刻停止层。

3. 发明授权

US07232762B2 Method for forming an improved low power SRAM contact 有权
公开(公告)号：US07232762B2
公开(公告)日：2007-06-19
申请号：US10871102
申请日：2004-06-16
申请人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
发明人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/0276 , H01L27/11 , H01L27/1104
摘要： A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said BARC layer; and, forming at least a first contact opening exposing said etch stop layer by a first etching process.

4. 发明授权

US07714392B2 Method for forming an improved low power SRAM contact 失效
标题翻译：形成改进的低功率SRAM触点的方法
公开(公告)号：US07714392B2
公开(公告)日：2010-05-11
申请号：US11800503
申请日：2007-05-07
申请人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
发明人： Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
IPC分类号： H01L23/48
CPC分类号： H01L21/31116 , H01L21/0276 , H01L27/11 , H01L27/1104
摘要： A semiconductor device includes a semiconducting substrate having CMOS transistors thereon. A composite etch stop layer including a lowermost silicon oxynitride portion and an uppermost silicon nitride portion is disposed on the semiconducting substrate including the CMOS transistors. At least one dielectric layer is on the composite etch stop layer. A first contact opening extends to a first level through the composite etch stop layer thickness and a second contact opening extends to a second level deeper than the first level through the composite etch stop layer.
摘要翻译：半导体器件包括其上具有CMOS晶体管的半导体衬底。包括最下面的氮氧化硅部分和最上面的氮化硅部分的复合蚀刻停止层设置在包括CMOS晶体管的半导体衬底上。复合蚀刻停止层上至少有一个介电层。第一接触开口通过复合蚀刻停止层厚度延伸到第一层，并且第二接触开口通过复合蚀刻停止层延伸到比第一层更深的第二层。

5. 发明申请

US20130163839A1 SIGNAL AND IMAGE ANALYSIS METHOD AND ULTRASOUND IMAGING SYSTEM 有权
标题翻译：信号和图像分析方法和超声成像系统
公开(公告)号：US20130163839A1
公开(公告)日：2013-06-27
申请号：US13553793
申请日：2012-07-19
申请人： Arvin Huang-Te Li , Yio-Wha Shau , Yu-Ching Chang , Bai-Kuang Hwang , Min Shih
发明人： Arvin Huang-Te Li , Yio-Wha Shau , Yu-Ching Chang , Bai-Kuang Hwang , Min Shih
IPC分类号： G06K9/00
CPC分类号： A61B8/06 , A61B8/488 , A61B8/5223
摘要： A time domain signal analysis method is provided. The signal analysis method includes the following steps. A signal to be analyzed is received. The signal to be analyzed is iteratively sifted by using Empirical Mode Decomposition (EMD) to extract at least one intrinsic function (IMF). A normalized Hilbert transform is performed on the IMF. The transformed IMF includes phase information. The transformed IMF is processed by means of phase processing to obtain the processed IMF including angular frequency information. The foregoing signal analysis method could be utilized in an ultrasound imaging system to identify image information of ultrasound images.
摘要翻译：提供了时域信号分析方法。信号分析方法包括以下步骤。接收待分析的信号。通过使用经验模式分解（EMD）来提取至少一个内在函数（IMF）来迭代地筛选待分析的信号。在IMF上执行归一化希尔伯特变换。经转换的IMF包括阶段信息。通过相位处理来处理变换的IMF，以获得包括角频率信息的经处理的IMF。上述信号分析方法可用于超声成像系统中以识别超声图像的图像信息。

6. 发明授权

US06755431B2 Derailleur system for bicycle 失效
标题翻译：自行车变速器系统
公开(公告)号：US06755431B2
公开(公告)日：2004-06-29
申请号：US10233114
申请日：2002-09-03
申请人： Yu-Ching Chang
发明人： Yu-Ching Chang
IPC分类号： B62M102
CPC分类号： B62M17/00 , B62M11/04 , B62M11/12
摘要： A derailleur system for bicycle is constructed to include an annular plate holding at least two gears, a bracket assembly rotated to a center hole of the annular plate to hold a transmission shaft, a driven gear wheel set pivoted to the transmission shaft and having a driven gear wheel meshed with one of the gears, a control device connected to a derailleur cable of the bicycle, and a driven member for selectively controlling the engagement between the driven gear wheels of the driven gear wheel set with the transmission shaft subject to the position of the control device.
摘要翻译：用于自行车的拨链器系统被构造成包括保持至少两个齿轮的环形板，支架组件旋转到环形板的中心孔以保持传动轴，从动齿轮组枢转到传动轴并具有驱动与其中一个齿轮啮合的齿轮，连接到自行车的拨链器缆线的控制装置，以及从动构件，用于选择性地控制从动齿轮组的驱动齿轮与传动轴的啮合，控制装置。

7. 发明授权

US06251799B1 Method to provide low dielectric constant voids between adjacent conducting lines in a semiconductor device 有权
标题翻译：在半导体器件中在相邻导线之间提供低介电常数空隙的方法
公开(公告)号：US06251799B1
公开(公告)日：2001-06-26
申请号：US09356004
申请日：1999-07-16
申请人： Wei-Sheng Lai , Yu-Ching Chang , Chun-Hu Ge , Chih-Ming Chen
发明人： Wei-Sheng Lai , Yu-Ching Chang , Chun-Hu Ge , Chih-Ming Chen
IPC分类号： H01L2131
CPC分类号： H01L21/7682
摘要： A method to provide low dielectric constant voids between adjacent conducting lines in a semiconductor device. Narrowly spaced metal lines are formed on the substrate surface. A dielectric layer is deposited overlying the metal lines and the substrate surface. A high water content, water saturated, environment is created for the spin-on-glass process. A pseudo-water condition exists on the surface of the dielectric layer prior to the deposition of the spin-on-glass layer. The spin-on-glass layer is deposited overlying the dielectric layer. Voids form in the spin-on-glass layer between the narrowly spaced metal lines. The spin-on-glass layer is baked. The integrated circuit device is completed.
摘要翻译：一种在半导体器件中的相邻导线之间提供低介电常数空隙的方法。在基板表面上形成窄间隔的金属线。沉积在金属线和衬底表面上的电介质层。为旋涂工艺创造出高含水量，水饱和的环境。在蒸镀玻璃层的沉积之前，在水介质层的表面上存在假水条件。旋涂玻璃层沉积在电介质层上。在间隔狭窄的金属线之间的旋涂玻璃层中形成空隙。旋涂玻璃层被烘烤。集成电路装置完成。

8. 发明授权

US08837798B2 Signal and image analysis method and ultrasound imaging system 有权
标题翻译：信号和图像分析方法和超声成像系统
公开(公告)号：US08837798B2
公开(公告)日：2014-09-16
申请号：US13553793
申请日：2012-07-19
申请人： Arvin Huang-Te Li , Yio-Wha Shau , Yu-Ching Chang , Bai-Kuang Hwang , Min Shih
发明人： Arvin Huang-Te Li , Yio-Wha Shau , Yu-Ching Chang , Bai-Kuang Hwang , Min Shih
IPC分类号： G06K9/00 , G06K9/46
CPC分类号： A61B8/06 , A61B8/488 , A61B8/5223
摘要： A time domain signal analysis method is provided. The signal analysis method includes the following steps. A signal to be analyzed is received. The signal to be analyzed is iteratively sifted by using Empirical Mode Decomposition (EMD) to extract at least one intrinsic function (IMF). A normalized Hilbert transform is performed on the IMF. The transformed IMF includes phase information. The transformed IMF is processed by means of phase processing to obtain the processed IMF including angular frequency information. The foregoing signal analysis method could be utilized in an ultrasound imaging system to identify image information of ultrasound images.
摘要翻译：提供了时域信号分析方法。信号分析方法包括以下步骤。接收待分析的信号。通过使用经验模式分解（EMD）来提取至少一个内在函数（IMF）来迭代地筛选待分析的信号。在IMF上执行归一化希尔伯特变换。经转换的IMF包括阶段信息。通过相位处理来处理变换的IMF，以获得包括角频率信息的经处理的IMF。上述信号分析方法可用于超声成像系统中以识别超声图像的图像信息。

9. 发明授权

US08795678B2 TLR-2 agonists and methods of use thereof 有权
标题翻译： TLR-2激动剂及其使用方法
公开(公告)号：US08795678B2
公开(公告)日：2014-08-05
申请号：US13470554
申请日：2012-05-14
申请人： Shu-Mei Liang , Yu-Ching Chang
发明人： Shu-Mei Liang , Yu-Ching Chang
IPC分类号： A61K39/39 , A61K39/145 , A61K39/295
CPC分类号： A61K39/145 , A61K39/12 , A61K39/39 , A61K2039/55516 , A61K2039/6075 , C12N2760/16134 , C12N2770/32122
摘要： Two new TLR2 agonists, VP1 and VP3, which are structural proteins of FMDV. Residues of VP3 responsible for TLR2 activation are identified. In vivo experiments showed that VP3-4xM2e is active as a vaccine adjuvant.
摘要翻译：两种新的TLR2激动剂，VP1和VP3，它们是FMDV的结构蛋白。鉴定出负责TLR2活化的VP3残基。体内实验表明VP3-4xM2e作为疫苗佐剂是有活性的。

10. 发明申请

US20130029476A1 DICING PROCESS AND DICING APPARATUS 审中-公开
标题翻译：定义流程和定位设备
公开(公告)号：US20130029476A1
公开(公告)日：2013-01-31
申请号：US13540781
申请日：2012-07-03
申请人： Chien-Sen WENG , Mong-Yeng Xing , Yu-Ching Chang , Wei-Chang Yu , Yao-Hui Lin
发明人： Chien-Sen WENG , Mong-Yeng Xing , Yu-Ching Chang , Wei-Chang Yu , Yao-Hui Lin
IPC分类号： H01L21/78
CPC分类号： B28D5/0011 , B28D5/0052 , Y02P80/30
摘要： A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.
摘要翻译：提供了一种切割工艺，用于沿着多条预定划线将晶片切割成可剥离地粘附到脱模膜上的多个模具。切割工艺包括：（a）在支撑装置上设置晶片破坏载体，晶片断开载体具有切屑单元; （b）将所述晶片设置在所述支撑装置上方，使得所述切屑单元处于与所述划线对应的位置; 并且（c）通过向剥离膜施加力使脱模膜的释放表面附着到晶片上，以将晶片破坏载体的切屑单元与晶片接触，使得晶片沿着划线分裂成死了

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