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1. 发明授权

US6086952A Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer 失效
标题翻译：对二甲苯和多乙烯基硅/氧共聚单体的共聚物的化学气相沉积
公开(公告)号：US6086952A
公开(公告)日：2000-07-11
申请号：US97365
申请日：1998-06-15
申请人： Chi-I Lang , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , Shin-Puu Jeng , David Cheung
发明人： Chi-I Lang , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , Shin-Puu Jeng , David Cheung
IPC分类号： C08F212/12 , B05D7/24 , C08F230/08 , C08G61/12 , H01L21/312 , H01L21/316 , C23C16/00
CPC分类号： B05D1/60
摘要： A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.
摘要翻译：一种形成具有低介电常数或半导体衬底的薄聚合物层的方法。在一个实施方案中，该方法包括稳定的二对二甲苯的蒸发，将这种气态二聚体材料热解转化为反应性单体，以及将所得气态对二甲苯单体与一个或多个具有硅 - 氧键的共聚单体共混，至少两个悬挂的碳 - 碳双键。与聚对二甲苯-N均聚物相比，共聚物膜具有低介电常数，改善的热稳定性和与氧化硅层的优异粘附性。

2. 发明授权

US06709715B1 Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds 失效
标题翻译：具有各种双键的聚对二甲苯N和共聚单体共聚物的等离子体增强化学气相沉积
公开(公告)号：US06709715B1
公开(公告)日：2004-03-23
申请号：US09336368
申请日：1999-06-17
申请人： Chi-I Lang , Shin-Puu Jeng , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , David W. Cheung
发明人： Chi-I Lang , Shin-Puu Jeng , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , David W. Cheung
IPC分类号： H05H146
CPC分类号： H01L21/3122 , B05D1/62 , C08G61/025 , C08G61/12 , C08G2261/3424 , C09D4/00 , H01J37/32082 , H01J37/3244 , H01J37/32522 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/76801 , H01L21/76807 , C08G77/00
摘要： A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.
摘要翻译：一种用于通过等离子体辅助共聚对苯二甲烯和具有碳 - 碳双键的共聚单体在约0W至约100W的恒定RF功率水平或约20W至约20W的脉冲RF功率水平沉积低介电常数薄膜的方法和装置约160W。共聚物膜的介电常数为约2.2至约2.5。优选的共聚单体包括四乙烯基四甲基环四硅氧烷，四烯丙氧基硅烷和三乙烯基甲基硅烷。共聚物膜包括至少1重量％的共聚单体。

3. 发明授权

US5939831A Methods and apparatus for pre-stabilized plasma generation for microwave clean applications 失效
标题翻译：用于微波清洁应用的预稳定等离子体产生的方法和装置
公开(公告)号：US5939831A
公开(公告)日：1999-08-17
申请号：US746658
申请日：1996-11-13
申请人： Gary Fong , Fong Chang , Long Nguyen
发明人： Gary Fong , Fong Chang , Long Nguyen
IPC分类号： C23C16/44 , H01J37/32 , H01L21/00 , B08B6/00
CPC分类号： H01L21/67017 , C23C16/4405 , H01J37/32192 , H01J37/32357 , H01J37/3244 , H01J37/32862 , H01J37/32935 , H01J37/32963 , Y10S438/905
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

4. 发明授权

US5866795A Liquid flow rate estimation and verification by direct liquid measurement 失效
标题翻译：液体流量估算和直接液体测量验证
公开(公告)号：US5866795A
公开(公告)日：1999-02-02
申请号：US819593
申请日：1997-03-17
申请人： Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
发明人： Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
IPC分类号： G01L25/00
CPC分类号： G01F25/0007 , C23C16/4481 , G01F1/007 , G01F1/708 , G01F25/003 , G01F25/0038
摘要： An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
摘要翻译：用于控制液体前体流入沉积室的装置包括具有连接到沉积室上游的室入口管的液体注入口的液体注入系统。液体注入系统包括液体前体供应源，吹扫气体供应源，载气供应器，液体流量计和控制液体前体和载体气体流到腔室的控制器。吹扫管线连接在净化气体供应源和液体流量计之间，用于捕集已知质量的液体前体。为了校准液体前体的流动，吹扫气体以稳定的速率推动被捕获的液体前体通过液体流量计。测量从清除管线排出被捕获的液体前体的经过时间。基于直接液体测量方法，使用捕获的液体前体的质量和测量的经过时间计算校准信息。校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

5. 发明申请

US20060169218A1 Pet car 审中-公开
标题翻译：宠物车
公开(公告)号：US20060169218A1
公开(公告)日：2006-08-03
申请号：US11165642
申请日：2005-06-24
申请人： Fong Chang
发明人： Fong Chang
IPC分类号： A01K1/03
CPC分类号： A01K1/0254 , A01K1/0236
摘要： A pet carrying apparatus in which a pet can get in or out of a bag structure by itself is provided. The bag structure has a definite inner space defined by a bag body, a positioning frame that is positioned on a periphery the bag body, and a front layer defining a pet opening therein, whereby a pet can get in or out of the inner space. The apparatus further has a vehicle body that defines a vehicle inner space. The vehicle body has a frame and a set of attached wheels. The apparatus also has a pair of connecting devices positioned opposite of each other. Each of the connecting devices being located at an inner side of the vehicle body such that when the bag structure is placed within the vehicle inner space, the pair of connecting devices is symmetrically placed on the positioning frame.
摘要翻译：提供宠物可以自己进出袋结构的宠物携带设备。袋结构具有由袋体定义的确定的内部空间，位于袋体的周边的定位框架和在其中限定宠物开口的前层，由此宠物可以进入或离开内部空间。该装置还具有限定车辆内部空间的车体。车体具有框架和一组附接的车轮。该装置还具有彼此相对定位的一对连接装置。每个连接装置位于车体的内侧，使得当袋结构被放置在车辆内部空间内时，该对连接装置对称放置在定位架上。

6. 发明授权

US07950068B2 Headwear comprising a bill which defines an enclosed space 失效
标题翻译：头饰包括一个定义封闭空间的帐单
公开(公告)号：US07950068B2
公开(公告)日：2011-05-31
申请号：US11969784
申请日：2008-01-04
申请人： Fong Chang
发明人： Fong Chang
IPC分类号： A42B1/00
CPC分类号： A42B1/242 , A42B1/063 , A42B1/064
摘要： A headwear assembly, comprising a crown, a bill attached to said crown, and extending outwardly therefrom. The bill comprises an upper bill portion comprising a first periphery and a first closure means disposed along that first periphery, a lower bill portion comprising a second periphery and a second closure means disposed along that second periphery, wherein the first periphery can be releaseably attached to the second periphery by releaseably attaching the first closure means to the second closure means to define an enclosed space between the upper bill portion and the lower bill portion.
摘要翻译：一种头饰组件，包括冠部，附接到所述冠部的纸币，并从其向外延伸。纸币包括上部纸币部分，其包括第一周边和沿着该第一周边布置的第一封闭装置，包括第二周边的下部纸币部分和沿着该第二周边设置的第二封闭装置，其中第一周边可以可释放地附接到所述第二周边通过将所述第一封闭装置可释放地附接到所述第二封闭装置以限定所述上部纸币部分和所述下部纸币部分之间的封闭空间。

7. 外观设计

USD572704S1 Wireless plug-in speaker assembly 有权
标题翻译：无线插件扬声器组件
公开(公告)号：USD572704S1
公开(公告)日：2008-07-08
申请号：US29249579
申请日：2006-10-12
申请人： Fong Chang
设计人： Fong Chang

8. 发明授权

US5968588A In-situ liquid flow rate estimation and verification by sonic flow method 失效
标题翻译：声流法原位液体流量估算与验证
公开(公告)号：US5968588A
公开(公告)日：1999-10-19
申请号：US819674
申请日：1997-03-17
申请人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
发明人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
IPC分类号： C23C16/448 , C23C16/52 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4481
摘要： An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
摘要翻译：用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。用压力表测量第一稳态压力。液体前体蒸发并引导到载气流入旁通管线。用压力表测量第二稳态压力。基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

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