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1. 发明授权

US07449345B2 Capping structure for enhancing dR/R of the MTJ device 失效
标题翻译：用于增强MTJ装置的dR / R的封盖结构
公开(公告)号：US07449345B2
公开(公告)日：2008-11-11
申请号：US10868715
申请日：2004-06-15
申请人： Cheng T. Horng , Ru-Ying Tong , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Liubo Hong , Min Li
IPC分类号： G11B5/72 , H01L41/06
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/10 , H01L43/12
摘要： An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E−6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.
摘要翻译： MRAM阵列或TMR读取头中的MTJ由具有较低的互扩散阻挡层的覆盖层，中间氧吸气层和接触顶部导体的上部金属层组成。复合覆盖层特别适用于中等自旋极化自由层，例如Fe含量约为17.5至20原子％的NiFe层。封端层优选具有Ru / Ta / Ru构型，其中下Ru层的厚度约为10至30埃，Ta层约为30埃厚。结果，在MRAM阵列的MTJ中，具有约40％的高dR / R达到小于约1.0E-6的低磁致伸缩。通过在8至10埃厚的Al层上通过原位ROX工艺形成的AlOx隧道势垒层获得最佳结果。

2. 发明授权

US07211447B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07211447B2
公开(公告)日：2007-05-01
申请号：US11080868
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.
摘要翻译：公开了一种在MRAM阵列中形成高性能MTJ的方法。溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

3. 发明授权

US07208807B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07208807B2
公开(公告)日：2007-04-24
申请号：US11080860
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01L43/12
摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.
摘要翻译：公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。关键特征是由在Ta表面上形成的氧构成的表面活性剂层。得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

4. 发明授权

US07838436B2 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US07838436B2
公开(公告)日：2010-11-23
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

5. 发明授权

US07238979B2 Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM 有权
标题翻译：缓冲（种子）层在高性能磁隧道结MRAM中
公开(公告)号：US07238979B2
公开(公告)日：2007-07-03
申请号：US11236049
申请日：2005-09-26
申请人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
发明人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/30 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
摘要翻译：特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑，并具有高的击穿电压。种子层是形成在Ta的溅射蚀刻层上的NiCr层。用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

6. 发明授权

US07217577B2 Structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的结构/方法
公开(公告)号：US07217577B2
公开(公告)日：2007-05-15
申请号：US11522663
申请日：2006-09-18
申请人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层）其超薄，光滑，并具有高击穿电压。在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

7. 发明授权

US07122852B2 Structure/method to fabricate a high performance magnetic tunneling junction MRAM 失效
标题翻译：制造高性能磁隧道结MRAM的结构/方法
公开(公告)号：US07122852B2
公开(公告)日：2006-10-17
申请号：US10844171
申请日：2004-05-12
申请人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Liubo Hong , Ru-Ying Tong
IPC分类号： H01L31/113 , H01L29/76 , H01L21/00
CPC分类号： H01L43/12 , H01L43/08 , Y10S977/934 , Y10S977/935
摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
摘要翻译：在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。作为溅射蚀刻的结果，Ta层具有光滑的表面，并且光滑的表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层），其中具有超薄，光滑，且具有较高的击穿电压。在Ta的溅射蚀刻层上形成NiCr种子层。在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

8. 发明申请

US20110133300A1 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US20110133300A1
公开(公告)日：2011-06-09
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

9. 发明申请

US20110076785A1 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US20110076785A1
公开(公告)日：2011-03-31
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

10. 发明授权

US06960480B1 Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head 有权
标题翻译：形成磁隧道结（MTJ）MRAM器件和隧道磁阻（TMR）读头的方法
公开(公告)号：US06960480B1
公开(公告)日：2005-11-01
申请号：US10849310
申请日：2004-05-19
申请人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
发明人： Cheng T. Horng , Liubo Hong , Ru-Ying Tong , Yu-Hsia Chen
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01F10/30 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12 , H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/30 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12
摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
摘要翻译：特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑，并具有高的击穿电压。种子层是形成在Ta的溅射蚀刻层上的NiCr层。用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被原位氧化（NOX），以形成阻挡层。所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

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