专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06590751B1 Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient 有权
标题翻译：具有增强磁阻（MR）系数的各向异性磁阻（MR）传感器元件
公开(公告)号：US06590751B1
公开(公告)日：2003-07-08
申请号：US09408700
申请日：1999-09-30
申请人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
发明人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3954
摘要： A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成各向异性磁阻（MR）传感器元件的方法和根据该方法形成的各向异性磁阻（MR）传感器元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，在氧化镍材料层上形成磁阻（MR）层。该方法考虑了根据该方法形成的各向异性磁阻（MR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的各向异性磁阻（MR）传感器元件。

2. 发明授权

US06292336B1 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
标题翻译：具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件
公开(公告)号：US06292336B1
公开(公告)日：2001-09-18
申请号：US09408703
申请日：1999-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

3. 发明授权

US06466418B1 Bottom spin valves with continuous spacer exchange (or hard) bias 失效
标题翻译：底部旋转阀具有连续的间隔物交换（或硬）偏置
公开(公告)号：US06466418B1
公开(公告)日：2002-10-15
申请号：US09502035
申请日：2000-02-11
申请人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
发明人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.
摘要翻译：用于形成具有连续间隔物交换硬偏置的镜面反射底部自旋阀磁阻（SVMR）传感器元件的方法和根据该方法制造的镜面反射底部自旋阀磁阻（SVMR）传感器元件。为了实现该方法，提供了一个衬底，在其上形成一种晶种层，在其上形成反铁磁钉扎层，在其上形成铁磁性钉扎层，在其上形成非磁性间隔层，形成铁磁自由层，在其上形成镜面反射和覆盖层。传感器元件的宽度由在一对连续间隔物交换硬偏压层上对准的一对导电引线限定。

4. 发明授权

US06392853B1 Spin valve structure design with laminated free layer 失效
标题翻译：自旋阀结构设计采用层压自由层
公开(公告)号：US06392853B1
公开(公告)日：2002-05-21
申请号：US09489973
申请日：2000-01-24
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Youfeng Zheng , Ru-Ying Tong , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Youfeng Zheng , Ru-Ying Tong , Kochan Ju
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3967 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3295 , H01L43/08 , Y10T428/1121 , Y10T428/12465 , Y10T428/26
摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.
摘要翻译：巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。另外，高AMR / GMR比率导致更大的信号不对称变化。因此，减少AMR贡献以及AMR / GMR比值是有希望的。这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

5. 发明授权

US06630248B1 Synthetic anti-parallel/parallel/pinned layer spin valve 失效
标题翻译：合成反并联/并联/固定层自旋阀
公开(公告)号：US06630248B1
公开(公告)日：2003-10-07
申请号：US09764231
申请日：2001-01-19
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Simon H. Liao , Kochan Ju
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Simon H. Liao , Kochan Ju
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01F10/3295 , H01F41/302 , Y10T428/1121 , Y10T428/1164 , Y10T428/12646 , Y10T428/12826 , Y10T428/12861 , Y10T428/12868 , Y10T428/12931 , Y10T428/24975
摘要： A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layers—a first layer of cobalt-iron, a layer of ruthenium, a second layer of cobalt-iron, a layer of nickel-chromium, and a third layer of cobalt-iron. The second layer of cobalt-iron should be about twice the thickness of the third cobalt-iron layer. The sum of the second and third cobalt-iron layer thicknesses may be greater or smaller than the thickness of the first cobalt-iron layer. A process for manufacturing the structure is also described.
摘要翻译：描述了一种自旋阀结构，其具有比现有已知技术的自旋阀中发现的更大的固着层坚固性，使得其非常适合用于高密度记录。这已经通过使用作为五层的层叠体的修饰的钉扎层 - 第一层钴 - 铁，钌层，第二层钴 - 铁，一层镍 - 铬和第三层钴铁层。钴 - 铁的第二层应为第三钴 - 铁层厚度的约两倍。第二和第三钴 - 铁层厚度的总和可以大于或小于第一钴 - 铁层的厚度。还描述了用于制造该结构的方法。

6. 发明授权

US08969982B2 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US08969982B2
公开(公告)日：2015-03-03
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

7. 发明授权

US08273666B2 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US08273666B2
公开(公告)日：2012-09-25
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

8. 发明申请

US20080090307A1 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US20080090307A1
公开(公告)日：2008-04-17
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

9. 发明授权

US07838436B2 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US07838436B2
公开(公告)日：2010-11-23
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

10. 发明申请

US20110133300A1 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US20110133300A1
公开(公告)日：2011-06-09
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式