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1. 发明授权

US07791723B2 Optical measurement using fixed polarizer 有权
标题翻译：使用固定偏光镜进行光学测量
公开(公告)号：US07791723B2
公开(公告)日：2010-09-07
申请号：US12017151
申请日：2008-01-21
申请人： Charles N. Archie , Matthew J. Sendelbach , Shahin Zangooie
发明人： Charles N. Archie , Matthew J. Sendelbach , Shahin Zangooie
IPC分类号： G01N4/00
CPC分类号： G01N21/21
摘要： Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.
摘要翻译：公开了使用固定偏振器的光学测量方法和系统。在一个实施例中，该方法包括提供至少一个光学检测系统，其具有具有第一类型偏振的固定偏振器; 在衬底上提供第一靶和在衬底上提供第二靶; 使用所述至少一个光学检测系统光学测量第一目标和第二目标，其中第一目标相对于第二目标定位成直角，以获得具有第一类型偏振的第一测量和具有第二类型的第二测量等效极化并结合第一测量和第二测量以获得光学测量。

2. 发明申请

US20090185168A1 OPTICAL MEASUREMENT USING FIXED POLARIZER 有权
标题翻译：使用固定极化器的光学测量
公开(公告)号：US20090185168A1
公开(公告)日：2009-07-23
申请号：US12017151
申请日：2008-01-21
申请人： Charles N. Archie , Matthew J. Sendelbach , Shahin Zangooie
发明人： Charles N. Archie , Matthew J. Sendelbach , Shahin Zangooie
IPC分类号： G01N21/00
CPC分类号： G01N21/21
摘要： Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.
摘要翻译：公开了使用固定偏振器的光学测量方法和系统。在一个实施例中，该方法包括提供至少一个光学检测系统，其具有具有第一类型偏振的固定偏振器; 在衬底上提供第一靶和在衬底上提供第二靶; 使用所述至少一个光学检测系统光学测量第一目标和第二目标，其中第一目标相对于第二目标定位成直角，以获得具有第一类型偏振的第一测量和具有第二类型的第二测量等效极化并结合第一测量和第二测量以获得光学测量。

3. 发明授权

US08157978B2 Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer 有权
标题翻译：用于在单个半导体晶片上形成具有不同光学和结构特性的多个多孔半导体区域的蚀刻系统和方法
公开(公告)号：US08157978B2
公开(公告)日：2012-04-17
申请号：US12361736
申请日：2009-01-29
申请人： Matthew J. Sendelbach , Alok Vaid , Shahin Zangooie
发明人： Matthew J. Sendelbach , Alok Vaid , Shahin Zangooie
IPC分类号： C25D5/02 , C25D17/00
CPC分类号： C25F7/00 , C25F3/12 , C25F3/14 , H01L21/3063
摘要： Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container. Also disclosed are associated method embodiments.
摘要翻译：公开了具有局部蚀刻能力的电化学蚀刻系统。该系统允许在单个半导体晶片上形成多个不同的多孔半导体区域。通过使用在外部容器内操作的一个或多个固定和/或可移动计算机控制的内部容器来实现局部蚀刻。外部容器保持电解质溶液并用作内部容器的电解质供应源。内部容器通过限制电场来限制半导体晶片的蚀刻区域的尺寸。此外，可以选择性地调节在电化学蚀刻工艺期间通过每个内部容器的电流量，以在蚀刻区域内实现期望的结果。每个蚀刻区域内的子区域的局部蚀刻也可以通过在每个内部容器内使用不同的固定和/或可移动的电极结构和屏蔽来实现。还公开了相关联的方法实施例。

4. 发明申请

US20100187126A1 ETCHING SYSTEM AND METHOD FOR FORMING MULTIPLE POROUS SEMICONDUCTOR REGIONS WITH DIFFERENT OPTICAL AND STRUCTURAL PROPERTIES ON A SINGLE SEMICONDUCTOR WAFER 有权
标题翻译：用于在单个半导体波长上形成具有不同光学和结构特性的多个多孔半导体区域的蚀刻系统和方法
公开(公告)号：US20100187126A1
公开(公告)日：2010-07-29
申请号：US12361736
申请日：2009-01-29
申请人： Matthew J. Sendelbach , Alok Vaid , Shahin Zangooie
发明人： Matthew J. Sendelbach , Alok Vaid , Shahin Zangooie
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： C25F7/00 , C25F3/12 , C25F3/14 , H01L21/3063
摘要： Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container. Also disclosed are associated method embodiments.
摘要翻译：公开了具有局部蚀刻能力的电化学蚀刻系统。该系统允许在单个半导体晶片上形成多个不同的多孔半导体区域。通过使用在外部容器内操作的一个或多个固定和/或可移动计算机控制的内部容器来实现局部蚀刻。外部容器保持电解质溶液并用作内部容器的电解质供应源。内部容器通过限制电场来限制半导体晶片的蚀刻区域的尺寸。此外，可以选择性地调节在电化学蚀刻工艺期间通过每个内部容器的电流量，以在蚀刻区域内实现期望的结果。每个蚀刻区域内的子区域的局部蚀刻也可以通过在每个内部容器内使用不同的固定和/或可移动的电极结构和屏蔽来实现。还公开了相关联的方法实施例。

5. 发明授权

US08411270B2 Monitoring stage alignment and related stage and calibration target 失效
标题翻译：监测阶段对准及相关阶段和校准目标
公开(公告)号：US08411270B2
公开(公告)日：2013-04-02
申请号：US12015789
申请日：2008-01-17
申请人： Shahin Zangooie , Lin Zhou , Roger M. Young , Clemente Bottini , Ronald D. Fiege
发明人： Shahin Zangooie , Lin Zhou , Roger M. Young , Clemente Bottini , Ronald D. Fiege
IPC分类号： G01B11/00
CPC分类号： H01L21/681
摘要： Methods, apparatuses and systems for monitoring a stage alignment in a processing system are disclosed. A method for monitoring a stage alignment in a processing system may include providing a calibration target on a surface of the stage; measuring an angle of incident of a light beam to the calibration target; and monitoring the stage alignment based on the determined angle of incidence.
摘要翻译：公开了用于监视处理系统中的台对准的方法，装置和系统。用于监测处理系统中的台对准的方法可以包括在台的表面上提供校准目标; 测量光束入射到校准目标的角度; 以及基于所确定的入射角来监视所述平台对准。

6. 发明授权

US08080849B2 Characterizing films using optical filter pseudo substrate 有权
标题翻译：使用光学滤光片伪基片表征膜
公开(公告)号：US08080849B2
公开(公告)日：2011-12-20
申请号：US12015795
申请日：2008-01-17
申请人： Shahin Zangooie , Lin Zhou , Sean D. Burns
发明人： Shahin Zangooie , Lin Zhou , Sean D. Burns
IPC分类号： H01L21/00
CPC分类号： G01N21/8422 , G01B11/0625 , G01B11/0641 , G01B11/0683
摘要： A system and method of characterizing a parameter of an ultra thin film, such as a gate oxide layer. A system is disclosed that includes a structure having a pseudo substrate positioned below an ultra thin film, wherein the pseudo substrate includes an optical mirror for enhancing an optical response; and a system for characterizing the ultra thin film by applying a light source to the ultra thin film and analyzing the optical response.
摘要翻译：表征超薄膜（例如栅极氧化物层）的参数的系统和方法。公开了一种包括具有位于超薄膜下方的伪衬底的结构的系统，其中所述伪衬底包括用于增强光学响应的光学镜; 以及通过将光源施加到超薄膜并分析光学响应来表征超薄膜的系统。

7. 发明授权

US07477365B2 Optical spot geometric parameter determination using calibration targets 失效
标题翻译：使用校准目标的光点几何参数确定
公开(公告)号：US07477365B2
公开(公告)日：2009-01-13
申请号：US11828666
申请日：2007-07-26
申请人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
发明人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
IPC分类号： G01J1/00 , G01B11/26 , G01B11/24 , G01B11/30 , G01C1/00
CPC分类号： G03F7/70516
摘要： A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.
摘要翻译：公开了一种用于确定光束的光点的几何参数的方法，系统和计算机程序产品。一种方法包括：提供校准目标，所述校准目标包括参数中的系统变化; 使用光束测量相对于系统变化的校准目标以获得多个测量值; 并分析测量和系统变化，以确定光点的几何参数。

8. 发明申请

US20080316471A1 DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER 失效
标题翻译：确定入射光束的AZIMUTH角
公开(公告)号：US20080316471A1
公开(公告)日：2008-12-25
申请号：US11766820
申请日：2007-06-22
申请人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
发明人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
IPC分类号： G01B11/26
CPC分类号： G01B11/26
摘要： A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.
摘要翻译：公开了一种用于确定入射光束到晶片的方位角的方法，系统和计算机程序产品。一种方法包括：使用入射光束对彼此不同的第一组光栅角进行校准目标的第一组测量; 分析第一组测量以确定对应于入射光束具有实际上零方位角的光栅线的参考光栅角度; 以及使用所确定的参考光栅角度确定入射光束到晶片的方位角。

9. 发明申请

US20080024781A1 Optical spot geometric parameter determination using calibration targets 失效
标题翻译：使用校准目标的光点几何参数确定
公开(公告)号：US20080024781A1
公开(公告)日：2008-01-31
申请号：US11828666
申请日：2007-07-26
申请人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
发明人： Shahin Zangooie , Roger M. Young , Lin Zhou , Clemente Bottini , Ronald D. Fiege
IPC分类号： G01B9/08
CPC分类号： G03F7/70516
摘要： A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.
摘要翻译：公开了一种用于确定光束的光点的几何参数的方法，系统和计算机程序产品。一种方法包括：提供校准目标，所述校准目标包括参数中的系统变化; 使用光束测量相对于系统变化的校准目标以获得多个测量值; 并分析测量和系统变化，以确定光点的几何参数。

10. 发明授权

US07592817B2 Alignment correction system and method of use 失效
标题翻译：对准校正系统及其使用方法
公开(公告)号：US07592817B2
公开(公告)日：2009-09-22
申请号：US11778679
申请日：2007-07-17
申请人： Robert J. Foster , Lin Zhou , Shahin Zangooie , Roger M. Young , Clemente Bottini
发明人： Robert J. Foster , Lin Zhou , Shahin Zangooie , Roger M. Young , Clemente Bottini
IPC分类号： G01R31/08 , G01R31/02 , G01R31/26
CPC分类号： G01B7/30 , G05B15/02 , H01L21/68
摘要： A system and method for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool comprising at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact. The method comprises measuring current on each branch of a circuit and calculating an angle of a wafer based on a difference in the current on each branch of the circuit.
摘要翻译：一种用于校正工具上的产品对准的系统和方法，更具体地，涉及一种用于校正工具的卡盘上的晶片对准的系统和方法。该系统是一种工具，其包括在工具的圆周附近的至少一个触点和靠近该至少一个触点的接地触点。该方法包括测量电路的每个分支上的电流，并且基于电路的每个分支上的电流差来计算晶片的角度。

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