会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Sensor semiconductor device and manufacturing method thereof
    • 传感器半导体器件及其制造方法
    • US20080296716A1
    • 2008-12-04
    • US12151570
    • 2008-05-07
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • Chang-Yueh ChanChien-Ping HuangChih-Ming HuangCheng-Hsu HsiaoChun-Chi Ke
    • H01L21/50H01L23/00
    • H01L21/56H01L23/3114H01L27/14618H01L27/14683H01L2224/0554H01L2224/0557H01L2224/05571H01L2224/05573H01L2224/16H01L2924/00014H01L2924/01079H01L2924/15311H01L2224/05599H01L2224/0555H01L2224/0556
    • A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.
    • 公开了一种传感器半导体器件及其制造方法。 该方法包括:提供具有多个金属电路的透光性载板; 通过形成在传感器芯片的接合焊盘上的导电凸块将金属电路电连接到多个传感器芯片,其中传感器芯片已经预先经受了薄化和芯片探测; 在传感器芯片之间填充第一电介质层以覆盖金属电路和传感器芯片的周边; 在所述传感器芯片和所述第一介电层上形成第二电介质层; 在所述传感器芯片之间形成用于暴露所述金属电路的槽,使得可以在所述第二介电层上形成电连接到所述金属电路的多个导电迹线; 并且分离传感器芯片以形成多个传感器半导体器件。 本发明克服了由于在接头处形成的尖角导致的迹线连接断裂的缺点,由于从晶片背面的切割中的对准误差导致的不良电连接和芯片损坏以及由于多次溅射而导致的成本增加 形成痕迹的过程。
    • 9. 发明申请
    • Sensor semiconductor device and manufacturing method thereof
    • 传感器半导体器件及其制造方法
    • US20080197438A1
    • 2008-08-21
    • US12070003
    • 2008-02-14
    • Chang-Yueh ChanChien-Ping HuangTse-Wen ChangChih-Ming HuangCheng-Hsu Hsiao
    • Chang-Yueh ChanChien-Ping HuangTse-Wen ChangChih-Ming HuangCheng-Hsu Hsiao
    • H01L31/0203H01L31/18
    • H01L31/0203H01L21/78H01L27/14618H01L27/14687H01L2224/94
    • This invention discloses a sensor semiconductor device and a manufacturing method thereof, including: providing a wafer having a plurality of sensor chips, forming a plurality of grooves between bond pads on active surfaces of the adjacent sensor chips; forming conductive traces in the grooves for electrically connecting the bond pads; mounting a transparent medium on the wafer for covering sensing areas of the sensor chips; thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces; cutting the wafer to separate the sensor chips; mounting the sensor chips on a substrate module having a plurality of substrates, electrically connecting the conductive traces to the substrates; providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and cutting the substrate module to separate a plurality of resultant sensor semiconductor devices.
    • 本发明公开了一种传感器半导体器件及其制造方法,包括:提供具有多个传感器芯片的晶片,在相邻传感器芯片的有源表面上的接合焊盘之间形成多个沟槽; 在沟槽中形成导电迹线以电连接接合焊盘; 在所述晶片上安装透明介质以覆盖所述传感器芯片的感测区域; 将传感器芯片从非活性表面减薄到凹槽,从而暴露导电迹线; 切割晶片以分离传感器芯片; 将传感器芯片安装在具有多个基板的基板模块上,将导电迹线电连接到基板; 在衬底模块上和传感器芯片之间提供绝缘材料,以封装传感器芯片,但暴露透明介质; 以及切割所述基板模块以分离多个所得传感器半导体器件。