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2. 发明授权

US06582858B2 Alternating phase shifting mask 有权
标题翻译：交替相移掩模
公开(公告)号：US06582858B2
公开(公告)日：2003-06-24
申请号：US09682480
申请日：2001-09-07
申请人： Chien-Wen Lai , Chien-Ming Wang , Feng-Yuan Chang , I-Hsiung Huang
发明人： Chien-Wen Lai , Chien-Ming Wang , Feng-Yuan Chang , I-Hsiung Huang
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/70
摘要： The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.
摘要翻译：本发明提供一种用于248nm光源的双曝光光刻工艺中的交替相移掩模（Alt-PSM）。 Alt-PSM包括：（1）石英基片; （2）衬底上的至少一条半致密线，其中半致密线与一侧的宽度大于2nm的透明区域相邻，另一侧与密集线图案相邻，狭窄的音调（3）第一相移区域，位于密集线图案和半致密线图案之间并且与半密集线相邻; 和（4）具有预定宽度的第二相移区域，其与半密度线相邻并且位于与第一相移区域相对的一侧上; 其中所述第一相移区域和所述第二相移区域之间的相位差为180度。

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