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1. 发明申请

US20130135785A1 MEMS VARIABLE CAPACITOR 有权
标题翻译： MEMS可变电容器
公开(公告)号：US20130135785A1
公开(公告)日：2013-05-30
申请号：US13700613
申请日：2011-06-01
申请人： Chang Wook Kim , Dong Chan Park , Ju Young Song , Sang Hun Lee , Sung Bae Cho , Hyun Ho Yang , Jun Bo Yoon , Dong Hun Choi , Chang Hun Han
发明人： Chang Wook Kim , Dong Chan Park , Ju Young Song , Sang Hun Lee , Sung Bae Cho , Hyun Ho Yang , Jun Bo Yoon , Dong Hun Choi , Chang Hun Han
IPC分类号： H01G7/00
CPC分类号： H01G7/00 , H01G5/16
摘要： Disclosed is a MEMS variable capacitor, the capacitor including a first electrode, a second electrode that is floated on an upper surface of the first electrode, and a third electrode capable of variably-adjusting a capacitance value by adjusting a gap between the first electrode and the second electrode.
摘要翻译：公开了一种MEMS可变电容器，电容器包括第一电极，漂浮在第一电极的上表面上的第二电极和能够通过调节第一电极和第二电极之间的间隙来可变地调整电容值的第三电极第二电极。

2. 发明授权

US07732245B2 Photodiode of CMOS image sensor and method for manufacturing the same 失效
标题翻译： CMOS图像传感器的光电二极管及其制造方法
公开(公告)号：US07732245B2
公开(公告)日：2010-06-08
申请号：US11319591
申请日：2005-12-29
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643
摘要： A photodiode of a CMOS image sensor and a method for manufacturing the same are provided, in which ions implanted in the vicinity of a device isolation film are prevented from being diffused into a photodiode region to reduce a dark current. The photodiode of a CMOS image sensor includes a heavily doped P-type semiconductor substrate, a lightly doped P-type epitaxial layer formed on the semiconductor substrate, a gate electrode formed on the epitaxial layer, a device isolation film and an N-type photodiode region formed in the epitaxial layer, an insulating film formed on the epitaxial layer to open a portion between the device isolation film and the photodiode region, and a heavily doped P-type diffusion region formed in the epitaxial layer between the device isolation film and the photodiode region.
摘要翻译：提供CMOS图像传感器的光电二极管及其制造方法，其中防止注入到器件隔离膜附近的离子扩散到光电二极管区域以减少暗电流。 CMOS图像传感器的光电二极管包括重掺杂P型半导体衬底，形成在半导体衬底上的轻掺杂P型外延层，形成在外延层上的栅电极，器件隔离膜和N型光电二极管形成在所述外延层中的绝缘膜，形成在所述外延层上以打开所述器件隔离膜和所述光电二极管区域之间的部分的绝缘膜，以及形成在所述器件隔离膜和所述光电二极管区域之间的外延层中的重掺杂P型扩散区域光电二极管区域。

3. 发明申请

US20090179237A1 CMOS image sensor and method for fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20090179237A1
公开(公告)日：2009-07-16
申请号：US12012937
申请日：2008-02-05
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.
摘要翻译： CMOS图像传感器及其制造方法，CMOS图像传感器包括具有限定在其中的有源区和器件隔离区的第二导电型半导体衬底，其中有源区具有限定在其中的光电二极管区和晶体管区，在器件隔离区域的半导体衬底中的隔离膜，在光电二极管区域的半导体衬底中的第一导电类型杂质区域，与器件隔离膜间隔一定距离的第一导电类型杂质区域和第二导电类型第一杂质在第一导电型杂质区域和器件隔离膜之间的半导体衬底中的区域，从而减少在光电二极管区域和场区域之间的界面处的产生暗电流。

4. 发明申请

US20090116949A1 Wafer Bonding Apparatus and Method 审中-公开
标题翻译：晶圆接合装置及方法
公开(公告)号：US20090116949A1
公开(公告)日：2009-05-07
申请号：US12250013
申请日：2008-10-13
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/68
CPC分类号： H01L21/68
摘要： A wafer bonding apparatus and method are provided. The wafer bonding apparatus can include an aligning unit, and the aligning unit can include a rotating roller for rotating at least two wafers, an aligning bar for aligning the at least two wafers, and a notch alignment sensor for sensing at least two notches of each of the at least two wafers.
摘要翻译：提供了晶片接合装置和方法。晶片接合装置可以包括对准单元，并且对准单元可以包括用于旋转至少两个晶片的旋转辊，用于对准至少两个晶片的对准杆和用于感测每个晶片的至少两个凹口的凹口对准传感器的至少两个晶片。

5. 发明授权

US07488617B2 CMOS image sensor and method for manufacturing the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07488617B2
公开(公告)日：2009-02-10
申请号：US11786169
申请日：2007-04-10
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1463
摘要： A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.
摘要翻译：公开了CMOS图像传感器及其制造方法。晶体管的栅极形成在单位像素的有源区中，并且同时在光电二极管的有源区的边缘部分上形成钝化层以具有与晶体管的栅极相同的层叠结构。在层压结构形成之后，将光电二极管的扩散区的杂质离子注入光电二极管的有源区。钝化层防止边缘部分在光电二极管扩散区域和隔离层之间的边界或界面处的离子注入损坏，这降低了CMOS图像传感器的暗电流和/或泄漏电流。

6. 发明申请

US20080227248A1 CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20080227248A1
公开(公告)日：2008-09-18
申请号：US12105493
申请日：2008-04-18
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/8238
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14687
摘要： A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.
摘要翻译：公开了CMOS图像传感器和制造方法。晶体管的栅极形成在单位像素的有源区中，并且通过将杂质离子注入半导体衬底来限定用于光电二极管的扩散区。作为抵抗离子注入的掩模层的光致抗蚀剂的图案以这样的方式形成在半导体衬底上，使得它们具有隔离层的边界部分，以便不使所定义的光电二极管的边界与隔离层。通过在光电二极管的扩散区域与隔离层之间的边界部分处的杂质的离子注入的损害被防止，这降低了COMS图像传感器的暗电流。

7. 发明申请

US20080149939A1 Electronic cooling device and fabrication method thereof 失效
标题翻译：电子冷却装置及其制造方法
公开(公告)号：US20080149939A1
公开(公告)日：2008-06-26
申请号：US12001679
申请日：2007-12-11
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L23/38 , H01L27/14618 , H01L27/16 , H01L2924/0002 , H01L2924/00
摘要： Provided are an electronic cooling device and a fabrication method thereof. The method may include forming an insulating layer on a semiconductor substrate, forming first and second silicide layers on the insulating layer, forming separate paired p-type and n-type semiconductors on each of the first and second silicide layers, forming a first interlayer dielectric (ILD) layer on the p-type and n-type semiconductors, exposing top surfaces of the n-type and p-type semiconductors, forming a third silicide layer on one semiconductor on each of the first and second silicide layers, forming a second ILD layer on the third silicide layer, and etching the second and first ILD layers to form contact holes exposing top surfaces of the first and second silicide layers.
摘要翻译：提供一种电子冷却装置及其制造方法。该方法可以包括在半导体衬底上形成绝缘层，在绝缘层上形成第一和第二硅化物层，在第一和第二硅化物层的每一个上形成单独的成对p型和n型半导体，形成第一层间电介质（ILD）层，暴露n型和p型半导体的顶表面，在第一和第二硅化物层中的每一个上的一个半导体上形成第三硅化物层，形成第二硅化物层 ILD层，并且蚀刻第二和第一ILD层以形成暴露第一和第二硅化物层的顶表面的接触孔。

8. 发明授权

US07358108B2 CMOS image sensor and method for fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07358108B2
公开(公告)日：2008-04-15
申请号：US11022890
申请日：2004-12-28
申请人： Chang Hun Han , Bum Sik Kim
发明人： Chang Hun Han , Bum Sik Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, forming a first conductive type heavily doped impurity ion region in the semiconductor substrate at both sides of the trench, forming a device isolation film by interposing an insulating film between the trench and the device isolation, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive type impurity ion region for a photodiode in the semiconductor substrate between the gate electrode and the device isolation film.
摘要翻译：公开了一种CMOS图像传感器及其制造方法，其中有源区域和场区域之间的边界不被离子注入所损坏。 CMOS图像传感器的制造方法包括在第一导电型半导体衬底中形成沟槽，在沟槽两侧的半导体衬底中形成第一导电型重掺杂杂质离子区域，通过插入绝缘膜形成器件隔离膜在沟槽和器件隔离之间，在半导体衬底上依次形成栅绝缘膜和栅电极，以及在栅电极和器件隔离膜之间的半导体衬底中形成用于光电二极管的第二导电型杂质离子区。

9. 发明授权

US07037748B2 CMOS image sensor and method for manufacturing the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07037748B2
公开(公告)日：2006-05-02
申请号：US10747196
申请日：2003-12-30
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14687
摘要： A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of insulating layer is formed on the semiconductor substrate. Impurities are ion-implanted into the active region to form one or more diffusion regions of a photo diode of the CMOS image sensor, wherein the passivation layer prevents a boundary portion of the active region from being ion-implanted. Thus, damages by ion implantation at the boundary portion between the diffusion region for the photo diode and the isolation region are prevented, and the dark current of the CMOS image sensor is reduced.
摘要翻译：一种CMOS图像传感器及其制造方法，其中CMOS图像传感器的多个晶体管的栅极形成在由CMOS图像传感器的单位像素的隔离区域限定的有源区域中，以及由绝缘层形成在半导体基板上。杂质被离子注入有源区域以形成CMOS图像传感器的光电二极管的一个或多个扩散区域，其中钝化层防止有源区域的边界部分被离子注入。因此，防止了在光电二极管的扩散区域与隔离区域之间的边界部分处的离子注入的损坏，并且降低了CMOS图像传感器的暗电流。

10. 发明授权

US07008856B2 Method for fabricating AND-type flash memory cell 失效
标题翻译：制造AND型闪存单元的方法
公开(公告)号：US07008856B2
公开(公告)日：2006-03-07
申请号：US10750250
申请日：2003-12-31
申请人： Chang Hun Han , Bong Kil Kim
发明人： Chang Hun Han , Bong Kil Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521 , Y10S438/95
摘要： A flash memory cell and fabrication method thereof are disclosed. An example fabrication method deposits a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride layer, implants ions into the substrate to form an ion implant region, forms spacers on sidewalls of the pad nitride layer pattern, removes some part of the pad oxide layer and the top portion of the substrate through an etching process using the spacers as a mask to form a trench that divides the ion implant region into two parts. The example fabrication method also forms a gap filling insulating layer over the resulting substrate, and forms a trench isolation layer and junction regions simultaneously by removing the spacers, the pad nitride layer pattern, the pad oxide layer, and the top portion of the gap filling insulating layer.
摘要翻译：公开了闪存单元及其制造方法。示例性制造方法将衬垫氧化物层和衬垫氮化物层沉积在半导体衬底上，将衬垫氮化物层，衬底离子注入衬底以形成离子注入区域，在衬垫氮化物层图案的侧壁上形成间隔物，去除一些通过使用间隔物作为掩模的蚀刻工艺，形成将离子注入区域分成两部分的沟槽的衬垫氧化物层的一部分和衬底的顶部。示例性制造方法还在所得到的衬底上形成间隙填充绝缘层，并且通过去除间隔物，衬垫氮化物层图案，衬垫氧化物层和间隙填充物的顶部部分同时形成沟槽隔离层和接合区域绝缘层。

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