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1. 发明申请

US20050274390A1 Ultra-fine particle catalysts for carbonaceous fuel elements 审中-公开
标题翻译：用于含碳燃料元素的超细颗粒催化剂
公开(公告)号：US20050274390A1
公开(公告)日：2005-12-15
申请号：US10868126
申请日：2004-06-15
申请人： Chandra Banerjee , Stephen Sears , Sheila Cash , Henry Chung
发明人： Chandra Banerjee , Stephen Sears , Sheila Cash , Henry Chung
IPC分类号： A24B15/16 , A24D3/04 , A24D3/08 , A24F47/00 , B01J21/06 , B01J23/10 , B01J23/52 , B01J23/745 , B01J35/00 , G01N30/46 , G01N30/72
CPC分类号： A24F47/006 , A24B15/165 , A24B15/286 , A24B15/287 , A24B15/288 , B01J21/063 , B01J23/10 , B01J23/52 , B01J23/745 , B01J35/0013 , G01N30/466 , G01N30/7206
摘要： The present invention provides fuel elements comprising a carbonaceous material and a catalyst composition comprising ultrafine particles of a metal oxide and/or metal. The present invention additionally provides smoking articles demonstrating reduced amounts of carbon monoxide in the smoke-like aerosol produced by the smoking article. In a further aspect, the present invention provides methods and apparatus for the simultaneous resolution and quantification of a carbon monoxide content and a carbon dioxide content of a gaseous mixture.
摘要翻译：本发明提供了包含碳质材料和包含金属氧化物和/或金属的超细颗粒的催化剂组合物的燃料元件。本发明另外提供了在吸烟制品产生的烟样气溶胶中显示减少量的一氧化碳的吸烟制品。在另一方面，本发明提供用于同时拆分和定量一氧化碳含量和气体混合物的二氧化碳含量的方法和装置。

2. 发明申请

US20150257446A1 Wet Scrubbing Electronic Cigarette 审中-公开
标题翻译：湿洗电子烟
公开(公告)号：US20150257446A1
公开(公告)日：2015-09-17
申请号：US14243782
申请日：2014-04-02
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： A24F47/00 , A24F1/02 , A24F1/28
CPC分类号： A24F47/008 , A24F1/02 , A24F1/28 , A24F1/30
摘要： The present invention removes particles entrained within a flow of vapor and cools vapor passing through a wet scrubbing section of an electronic cigarette. The wet scrubbing electronic cigarette includes an atomizer section having a battery section connection for connection to a battery section. The atomizer section has an atomizer heating section. A wet scrubbing section has a mouthpiece, a water chamber in fluid communication with the mouthpiece. The water chamber provides for scrubbing of incoming airflow. A tubular air passage assembly is held within the water chamber. The tubular air passage assembly is in fluid communication with the water chamber. A battery section powers the atomizer section.
摘要翻译：本发明除去夹带在蒸气流中的颗粒并冷却通过电子烟的湿洗涤部分的蒸气。湿式洗涤电子烟包括具有用于连接到电池部分的电池部分连接的雾化部分。雾化器部分具有雾化器加热部分。湿式洗涤部分具有接口管，与接口管流体连通的水室。水室可用于擦洗进入的气流。管状空气通道组件保持在水室内。管状空气通道组件与水室流体连通。电池部分为雾化器部分供电。

3. 发明授权

US06209859B1 Universal reflow fixture 失效
标题翻译：通用回流夹具
公开(公告)号：US06209859B1
公开(公告)日：2001-04-03
申请号：US09420180
申请日：1999-10-10
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： B25B514
CPC分类号： B23K3/087 , B23K2101/42 , B25B5/142 , Y10S269/903
摘要： A frame comprising four angles each angle having two legs, each leg connected to a a leg of a neighboring angle wherein locations of attachment of the legs are adjustable so as to accommodate a range of sizes of boards for a surface mount manufacturing process. One leg of each angle has a tongue and the other leg has a groove so that tongue of one leg slideably engages the groove of the leg of a neighboring angle to enable adjustment in size of the frame opening. The board is supported on a shoulder around the frame opening with the surface of the board opposite the supporting shoulder surface coplanar with the plane surface of the frame. A flat spring loaded rotatable finger on the plan surface in one corner of the board urges the board toward the opposite corner of the frame.
摘要翻译：包括四个角度的框架，每个角度具有两个腿，每个腿连接到相邻角度的腿部，其中腿的附接位置是可调节的，以便适应用于表面贴装制造过程的板的尺寸范围。每个角度的一个腿具有舌头，另一个腿部具有凹槽，使得一个腿部的舌头可滑动地接合相邻角度的腿部的凹槽，以使得能够调整框架开口的尺寸。板被支撑在框架开口周围的肩部上，其中板的表面与支撑肩表面相对，与框架的平面相平面。在板的一个角落的平面上的平板弹簧加载的可旋转手指促使板朝向框架的相对的角部。

4. 发明授权

US6063702A Global planarization method for inter level dielectric layers using IDL blocks 失效
标题翻译：使用IDL块的层间电介质层的全局平面化方法
公开(公告)号：US6063702A
公开(公告)日：2000-05-16
申请号：US789720
申请日：1997-01-27
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： H01L21/3105 , H01L21/768 , H01L21/302
CPC分类号： H01L21/31056 , H01L21/76819
摘要： The present invention provides a method of manufacturing of planarizing an insulating layer using a reduced size reversed interconnect mask and an etch stop layer. Spaced interconnections 22 are provided over the semiconductor substrate 10. An etch stop layer 26 is formed over the raised portions 22. A dielectric layer 30 is formed over the etch stop layer 26. The top of the first dielectric layer 30 over the valley 23 is about coplanar with the top of the etch stop layer 26 over the raised portion 22. A reduced size, reverse interconnect (photoresist) mask 40 is formed over the first dielectric layer 30. The reduced size, reverse interconnect mask 40 covers portions of the valleys 23 between the raised portions. The first dielectric layer 30 is etched using the reverse interconnect mask 40 as an etch mask leaving dielectric blocks 30A over the narrow valleys 23. The dielectric blocks 30A fill in the valleys 23 between the raised portions thereby eliminating the need for a global planarization step. A second dielectric layer formed over the etch stop layer 26 and blocks 30A thereby providing the dielectric layer with a planar top surface.
摘要翻译：本发明提供了使用减小尺寸的反向互连掩模和蚀刻停止层来制造平坦化绝缘层的方法。间隔的互连22设置在半导体衬底10上。蚀刻停止层26形成在凸起部分22之上。电介质层30形成在蚀刻停止层26上方。第二电介质层30的顶部位于谷23上方大约与凸起部分22上的蚀刻停止层26的顶部共面。减小的尺寸，反向互连（光致抗蚀剂）掩模40形成在第一介电层30上。减小尺寸的反向互连掩模40覆盖谷部分 23在凸起部分之间。使用反向互连掩模40作为蚀刻掩模来蚀刻第一电介质层30，将电介质块30A留在窄谷23上。介质块30A填充凸起部分之间的谷23，从而消除了对全局平坦化步骤的需要。形成在蚀刻停止层26上的第二介电层和块30A，从而为介电层提供平坦的顶表面。

5. 发明授权

US09380811B2 Wet scrubbing electronic cigarette 有权
公开(公告)号：US09380811B2
公开(公告)日：2016-07-05
申请号：US14203870
申请日：2014-03-11
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： A24F47/00 , A24F1/30
CPC分类号： A24F47/008 , A24F1/30
摘要： The present invention removes particles entrained within a flow of vapor and cools vapor passing through a wet scrubbing section of an electronic cigarette. The wet scrubbing electronic cigarette includes an atomizer section having a battery section connection for connection to a battery section. The atomizer section has an atomizer heating section. A wet scrubbing section has a mouthpiece, a water chamber in fluid communication with the mouthpiece. The water chamber provides for scrubbing of incoming airflow. A tubular air passage assembly is held within the water chamber. The tubular air passage assembly is in fluid communication with the water chamber. A battery section powers the atomizer section.

6. 发明申请

US20060011575A1 [METHOD OF REDUCING PATTERN PITCH IN INTEGRATED CIRCUITS] 有权
标题翻译： [集成电路中减少图案的方法]
公开(公告)号：US20060011575A1
公开(公告)日：2006-01-19
申请号：US10710488
申请日：2004-07-14
申请人： Henry Chung , Ming-Chung Liang , An-Chi Wei , Shin-Yi Tsai , Kuo-Liang Wei
发明人： Henry Chung , Ming-Chung Liang , An-Chi Wei , Shin-Yi Tsai , Kuo-Liang Wei
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32136 , H01L21/32139 , Y10S438/947
摘要： A method of reducing pattern pitch is provided. A material layer, a hard mask layer and a patterned photoresist layer are sequentially formed over a substrate. Using the patterned photoresist layer as etching mask, the hard mask layer is etched. Due to the trenching effect, a residual hard mask layer remains in an exposed region exposed by the photoresist layer and micro-trenches are formed at the edges of the residual hard mask layer. Thereafter, using the residual hard mask layer as etching mask to pattern the material layer. Finally, the patterned photoresist layer and the hard mask layer are removed. In the invention, the trenching effect is utilized when etching the hard mask layer. A portion of the hard mask layer remains, and the micro-trenches are formed in the hard mask layer. After the micro-trenches are transferred to the material layer, the pattern pitch can be reduced.
摘要翻译：提供了一种降低图形间距的方法。在衬底上顺序地形成材料层，硬掩模层和图案化的光致抗蚀剂层。使用图案化的光致抗蚀剂层作为蚀刻掩模，蚀刻硬掩模层。由于挖沟效应，残留的硬掩模层保留在由光致抗蚀剂层暴露的暴露区域中，并且在残留硬掩模层的边缘处形成微沟槽。此后，使用残留的硬掩模层作为蚀刻掩模来图案化材料层。最后，去除图案化的光致抗蚀剂层和硬掩模层。在本发明中，当蚀刻硬掩模层时，利用挖沟效应。硬掩模层的一部分残留，并且微沟槽形成在硬掩模层中。在将微沟槽转移到材料层之后，可以减小图案间距。

7. 发明授权

US06770975B2 Integrated circuits with multiple low dielectric-constant inter-metal dielectrics 有权
公开(公告)号：US06770975B2
公开(公告)日：2004-08-03
申请号：US09328646
申请日：1999-06-09
申请人： Shi-Qing Wang , Henry Chung , James Lin
发明人： Shi-Qing Wang , Henry Chung , James Lin
IPC分类号： H01L2348
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/7681 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L21/76849 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

8. 发明授权

US06452275B1 Fabrication of integrated circuits with borderless vias 失效
标题翻译：具有无边界通孔的集成电路制造
公开(公告)号：US06452275B1
公开(公告)日：2002-09-17
申请号：US09328649
申请日：1999-06-09
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： H01L2348
CPC分类号： H01L21/76897 , H01L21/02126 , H01L21/02348 , H01L21/02351 , H01L21/3122 , H01L21/3124 , H01L21/31604 , H01L21/76825 , H01L21/76834 , H01L21/76835 , H01L21/7688
摘要： The invention relates to the formation of structures in microelectronic devices such as integrated circuit devices by means of borderless via architectures in intermetal dielectrics. An integrated circuit structure has a substrate, a layer of a second dielectric material positioned on the substrate and spaced apart metal contacts are on the layer of the second dielectric material. The metal contacts have side walls, and a lining of a first dielectric on the side walls; a space between the linings on adjacent metal contact side walls filled with the second dielectric material, a top surface of each of the metal contacts, the linings and the spaces are at a common level. An additional layer of the second dielectric material is on some of the metal contacts, linings and filled spaces. At least one via extends through the additional layer of the second dielectric material and extends to the top surface of at least one metal contact and optionally at least one of the linings.
摘要翻译：本发明涉及在诸如集成电路器件的微电子器件中通过金属间电介质中的无边界通孔结构形成结构。集成电路结构具有衬底，位于衬底上的第二介电材料层和间隔开的金属触点位于第二电介质材料的层上。金属触点具有侧壁和侧壁上的第一电介质的衬里; 填充有第二介电材料的相邻金属接触侧壁上的衬垫之间的空间，每个金属接触件的顶表面，衬里和空间处于共同的水平。第二电介质材料的附加层位于一些金属触点，衬里和填充空间上。至少一个通孔延伸穿过第二电介质材料的附加层并且延伸到至少一个金属接触件和任选的至少一个衬垫的顶表面。

9. 发明授权

US06287955B1 Integrated circuits with multiple low dielectric-constant inter-metal dielectrics 失效
标题翻译：具有多个低介电常数金属间电介质的集成电路
公开(公告)号：US06287955B1
公开(公告)日：2001-09-11
申请号：US09718787
申请日：2000-11-22
申请人： Shi-Qing Wang , Henry Chung , James Lin
发明人： Shi-Qing Wang , Henry Chung , James Lin
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/76808 , H01L21/7681 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L21/76849 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.
摘要翻译：本发明提供了在诸如集成电路器件的微电子器件中形成结构的方法。更具体地，本发明涉及使用多个低介电常数金属间电介质形成通孔，互连金属化和布线。该方法使用两个或多个不同的低k电介质用于集成电路的Cu基双镶嵌后端的金属间电介质。由于两种电介质的等离子体蚀刻特性明显不同，因此使用有机和无机低k电介质都有优势。一个电介质用作蚀刻其它电介质的蚀刻步骤，因此不需要额外的蚀刻阻挡层。由于使用低k电介质导致较低的寄生电容，实现了卓越的性能。形成具有基板的集成电路结构; 在基板上的无机层，由基板上的金属线图案和金属线之间的基板上的无机电介质构成; 以及无机层上的有机层，其由具有金属填充的通孔的有机电介质组成，其连接到无机层的金属线。

10. 发明授权

US06237832B1 Wave soldering fixture 失效
标题翻译：波峰焊夹具
公开(公告)号：US06237832B1
公开(公告)日：2001-05-29
申请号：US09420179
申请日：1999-10-18
申请人： Henry Chung
发明人： Henry Chung
IPC分类号： B23K3700
CPC分类号： B23K3/087 , B23K2101/42
摘要： An apparatus used in a process for supporting a printed circuit board during a wave soldering operation including a frame with a frame opening in which a surface of the frame supports the board and also serves as a reference surface for vertically positioning the board above the solder pool. The board is secured against the reference surface with spring loaded clamps. Stiffeners preferably being an aluminum extrusion having a Tee or angle cross section is mounted along the outside edge of the reference surface of the frame and has a second reference surface facing in a direction opposite the reference surface of the frame. The second reference surface on the extrusion is accessible for support by a slide rail so that the height of the reference surface of the frame above the surface of the pool is independent of the thickness of the board or frame. A board support bar for minimizing warpage of the board from heat is disclosed as well as a hold down bar that secures components on the board so that they do not float away when contacted by the solder wave.
摘要翻译：一种用于在波峰焊操作期间用于支撑印刷电路板的工艺中使用的装置，包括框架的框架，框架开口框架支撑板，并且还用作用于将板垂直定位在焊池上方的参考表面。使用弹簧加载的夹具将板固定在参考面上。优选地，具有T形或角度横截面的铝挤压件沿着框架的参考表面的外边缘安装，并且具有面向与框架的参考表面相反的方向的第二参考表面。挤出件上的第二参考表面可通过滑轨进行支撑，使得在池的表面上方的框架的参考表面的高度与板或框架的厚度无关。公开了用于将板的翘曲从热量最小化的板支撑杆以及将组件固定在板上的压紧杆，使得当焊料波形接触时它们不会浮起。

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