专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08304743B2 Electron beam focusing electrode and electron gun using the same 有权
标题翻译：电子束聚焦电极和使用其的电子枪
公开(公告)号：US08304743B2
公开(公告)日：2012-11-06
申请号：US12285671
申请日：2008-10-10
申请人： Chan Wook Baik , Anurag Srivastava , Jong Min Kim , Sun Il Kim , Young Mok Son , Gun Sik Park , Jin Kyu So
发明人： Chan Wook Baik , Anurag Srivastava , Jong Min Kim , Sun Il Kim , Young Mok Son , Gun Sik Park , Jin Kyu So
IPC分类号： G21K5/04
CPC分类号： G21K1/087 , H01J1/13 , H01J1/30 , H01J1/46
摘要： An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.
摘要翻译：电子束聚焦电极和使用该电子束的电子枪可以包括具有多边形通孔的板; 至少形成在所述通孔的至少一侧的突出部。通过使用电子束聚焦电极，可以减小具有矩形横截面的电子束的扩展现象。此外，电子枪的输出可能增加，并且电子束可能容易聚焦。

2. 发明申请

US20090289542A1 Electron beam focusing electrode and electron gun using the same 有权
标题翻译：电子束聚焦电极和使用其的电子枪
公开(公告)号：US20090289542A1
公开(公告)日：2009-11-26
申请号：US12285671
申请日：2008-10-10
申请人： Chan Wook Baik , Anurag Srivastava , Jong Min Kim , Sun Il Kim , Young Mok Son , Gun Sik Park , Jin Kyu So
发明人： Chan Wook Baik , Anurag Srivastava , Jong Min Kim , Sun Il Kim , Young Mok Son , Gun Sik Park , Jin Kyu So
IPC分类号： H01J29/48 , H01J29/46
CPC分类号： G21K1/087 , H01J1/13 , H01J1/30 , H01J1/46
摘要： An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.
摘要翻译：电子束聚焦电极和使用该电子束的电子枪可以包括具有多边形通孔的板; 至少形成在所述通孔的至少一侧的突出部。通过使用电子束聚焦电极，可以减小具有矩形横截面的电子束的扩展现象。此外，电子枪的输出可能增加，并且电子束可能容易聚焦。

3. 发明授权

US08563076B2 Substrate structure and method of forming the same 有权
公开(公告)号：US08563076B2
公开(公告)日：2013-10-22
申请号：US12222444
申请日：2008-08-08
申请人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
发明人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
IPC分类号： B32B3/10
CPC分类号： C23C14/16 , C23C14/022 , C23C14/5806 , H01L21/30655 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.

4. 发明授权

US08514027B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08514027B2
公开(公告)日：2013-08-20
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： H03B5/30 , B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

5. 发明授权

US08092702B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08092702B2
公开(公告)日：2012-01-10
申请号：US12025186
申请日：2008-02-04
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性获得振荡器或放大器。

6. 发明申请

US20090252938A1 Substrate structure and method of forming the same 有权
标题翻译：底物结构及其形成方法
公开(公告)号：US20090252938A1
公开(公告)日：2009-10-08
申请号：US12222444
申请日：2008-08-08
申请人： Chan Wook Baik , Jong Seok Kim , Sun II Kim , Young Mok Son
发明人： Chan Wook Baik , Jong Seok Kim , Sun II Kim , Young Mok Son
IPC分类号： B32B3/10 , B05D5/12
CPC分类号： C23C14/16 , C23C14/022 , C23C14/5806 , H01L21/30655 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.
摘要翻译：提供一种基板结构及其形成方法。形成衬底结构的方法可以包括蚀刻衬底以形成具有垂直表面的蚀刻部分，在整个衬底或衬底的一部分中形成扩散材料层; 使扩散材料层退火，形成向蚀刻部分的表面向下扩散的晶种层，并在籽晶层上形成金属层。因此，可以通过晶种层增强基板的蚀刻部分的表面特性，因此，可以在蚀刻部分的垂直表面上形成具有改善的粘附性和均匀厚度的金属层。

7. 发明申请

US20130069731A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20130069731A1
公开(公告)日：2013-03-21
申请号：US13606533
申请日：2012-09-07
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
IPC分类号： H03B28/00 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
摘要翻译：一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

8. 发明授权

US08293124B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08293124B2
公开(公告)日：2012-10-23
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

9. 发明申请

US20090120903A1 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US20090120903A1
公开(公告)日：2009-05-14
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

10. 发明授权

US09163994B2 Electronic mirror and method for displaying image using the same 有权
标题翻译：电子镜和使用其显示图像的方法
公开(公告)号：US09163994B2
公开(公告)日：2015-10-20
申请号：US12385908
申请日：2009-04-23
申请人： Chan Wook Baik , Sun il Kim , Changwon Lee
发明人： Chan Wook Baik , Sun il Kim , Changwon Lee
IPC分类号： G09G3/00 , G01J5/02 , A61B5/01 , G01J5/08 , G01J5/00
CPC分类号： G01J5/02 , A61B5/01 , A61B5/015 , G01J5/0025 , G01J5/025 , G01J5/08 , G01J5/0821 , G01J5/0837 , G01J5/0896 , G01J2005/0077
摘要： An electronic mirror and a method for displaying an image using the electronic mirror are provided. The electronic mirror may include a display unit, a detecting unit and a control unit. The detecting unit may receive a signal transmitted from the outside. The control unit may control the detecting unit and the display unit to display the signal received at the detecting unit on the display unit as an image. The image displayed on the display unit may be output from the electronic mirror through the detecting unit. The electronic mirror may further include a reflecting unit. A light from the outside may pass through the detecting unit and the display unit and then be reflected on the reflecting unit. The reflected light may be output from the electronic mirror through the display unit and the detecting unit.
摘要翻译：提供电子反射镜和使用电子反射镜显示图像的方法。电子反射镜可以包括显示单元，检测单元和控制单元。检测单元可以接收从外部发送的信号。控制单元可以控制检测单元和显示单元将显示单元上的检测单元接收的信号显示为图像。显示单元上显示的图像可以通过检测单元从电子反射镜输出。电子反射镜还可以包括反射单元。来自外部的光可以通过检测单元和显示单元，然后在反射单元上反射。反射光可以通过显示单元和检测单元从电子反射镜输出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式