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1. 发明申请

US20120133450A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 有权
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20120133450A1
公开(公告)日：2012-05-31
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook BAIK , Jong Seok KIM , Seong Chan JUN , Sun Il KIM , Jong Min KIM , Chan Bong JUN , Sang Hun LEE
发明人： Chan Wook BAIK , Jong Seok KIM , Seong Chan JUN , Sun Il KIM , Jong Min KIM , Chan Bong JUN , Sang Hun LEE
IPC分类号： H03B5/30 , H01L21/762
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

2. 发明申请

US20110279188A1 RESONATOR USING CARBON NANO SUBSTANCE AND METHOD OF MANUFACTURING RESONATOR 有权
标题翻译：使用碳纳米材料的谐振器和制造谐振器的方法
公开(公告)号：US20110279188A1
公开(公告)日：2011-11-17
申请号：US13105070
申请日：2011-05-11
申请人： Jea Shik Shin , Seong Chan Jun , Yun Kwon Park , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim
发明人： Jea Shik Shin , Seong Chan Jun , Yun Kwon Park , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim
IPC分类号： H03B5/30 , B05D5/12 , B82Y40/00
CPC分类号： H03H9/2463 , B82Y30/00 , H03H2009/02322
摘要： A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.
摘要翻译：提供了谐振器和制造谐振器的方法。谐振器包括形成在衬底上的牺牲层和形成在牺牲层上的谐振结构，谐振结构包括碳纳米物质层和碳化硅层。

3. 发明申请

US20130302843A1 METHOD OF MEASURING BIOLOGICAL SAMPLE PROPERTIES AND BIOLOGICAL SAMPLE PROPERTY MEASURING APPARATUS 审中-公开
标题翻译：测量生物样品性质和生物样品物性测量装置的方法
公开(公告)号：US20130302843A1
公开(公告)日：2013-11-14
申请号：US13760114
申请日：2013-02-06
申请人： Sang Uk SON , Duck Hwan KIM , In Sang SONG , Seong Chan JUN , Ho Soo PARK , Jea Shik SHIN , Moon Chul LEE
发明人： Sang Uk SON , Duck Hwan KIM , In Sang SONG , Seong Chan JUN , Ho Soo PARK , Jea Shik SHIN , Moon Chul LEE
IPC分类号： G01N27/02 , A61B5/053 , A61B5/145
CPC分类号： G01N27/08 , A61B5/05 , A61B5/053 , A61B5/14532 , A61B5/14546 , G01N27/02 , G01N27/07 , G01N27/226
摘要： A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.
摘要翻译：提供了测量生物样品性质的方法和生物样品性质测量装置。测量生物样品性质的方法包括设置接触感测单元的生物材料，检测流过感测单元的射频（RF）信号，以及基于检测到的RF信号获得生物材料的RF性质指标。

4. 发明申请

US20130248368A1 SENSING APPARATUS USING RADIO FREQUENCY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：使用无线电频率的感应装置及其制造方法
公开(公告)号：US20130248368A1
公开(公告)日：2013-09-26
申请号：US13787940
申请日：2013-03-07
申请人： Duck Hwan KIM , Seong Chan JUN , Chul Soo KIM , In Sang SONG , Jae Shik SHIN
发明人： Duck Hwan KIM , Seong Chan JUN , Chul Soo KIM , In Sang SONG , Jae Shik SHIN
IPC分类号： G01N27/447
CPC分类号： G01N27/44791 , B03C5/005 , B03C5/026 , B03C2201/26 , Y10T156/10
摘要： A sensing apparatus using a radio frequency and a manufacturing method thereof is provided. A sensing apparatus using a radio frequency includes a protecting layer configured to protect a substrate from migration of electrons occurring as the radio frequency is applied to a first electrode and a second electrode, a channel forming layer configured to form a channel based on a field between the first electrode and the second electrode, the channel forming layer using a polarized carbon-based nano material to form the channel, and a sensing layer configured to sense glucose using a medium material that is attached on the carbon-based nano material.
摘要翻译：提供一种使用射频的感测装置及其制造方法。使用无线电频率的感测装置包括保护层，该保护层被配置为保护基板免受随着射频施加到第一电极和第二电极而发生的电子的迁移，通道形成层被配置为基于第二电极第一电极和第二电极，使用极化碳基纳米材料形成沟道的沟道形成层以及被配置为使用附着在碳基纳米材料上的介质材料感测葡萄糖的感测层。

5. 发明授权

US08514027B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08514027B2
公开(公告)日：2013-08-20
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： H03B5/30 , B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

6. 发明申请

US20130069731A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20130069731A1
公开(公告)日：2013-03-21
申请号：US13606533
申请日：2012-09-07
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
IPC分类号： H03B28/00 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
摘要翻译：一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

7. 发明授权

US08293124B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08293124B2
公开(公告)日：2012-10-23
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

8. 发明授权

US08092702B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08092702B2
公开(公告)日：2012-01-10
申请号：US12025186
申请日：2008-02-04
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性获得振荡器或放大器。

9. 发明申请

US20090120903A1 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US20090120903A1
公开(公告)日：2009-05-14
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

10. 发明授权

US09576916B2 High frequency circuit comprising graphene and method of operating the same 有权
标题翻译：包括石墨烯的高频电路及其操作方法
公开(公告)号：US09576916B2
公开(公告)日：2017-02-21
申请号：US13543050
申请日：2012-07-06
申请人： Hyeon-jin Shin , Jae-young Choi , Seong-chan Jun , Whan-kyun Kim , Hyung-seo Yoon , Ju-yeong Oh , Ju-hwan Lim
发明人： Hyeon-jin Shin , Jae-young Choi , Seong-chan Jun , Whan-kyun Kim , Hyung-seo Yoon , Ju-yeong Oh , Ju-hwan Lim
IPC分类号： H01L23/66 , H01L23/532 , H01L27/04
CPC分类号： H01L23/66 , H01L23/53276 , H01L27/04 , H01L2223/6627 , H01L2924/0002 , H01L2924/00
摘要： A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
摘要翻译：高频电路包括第一电子器件，第二电子器件和石墨烯互连单元，其中沟槽和通孔中的至少一个限定在石墨烯互连单元下方。

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