专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130069731A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20130069731A1
公开(公告)日：2013-03-21
申请号：US13606533
申请日：2012-09-07
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
IPC分类号： H03B28/00 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
摘要翻译：一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

2. 发明授权

US08293124B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08293124B2
公开(公告)日：2012-10-23
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

3. 发明申请

US20090120903A1 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US20090120903A1
公开(公告)日：2009-05-14
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

4. 发明授权

US08514027B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08514027B2
公开(公告)日：2013-08-20
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： H03B5/30 , B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

5. 发明授权

US08092702B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08092702B2
公开(公告)日：2012-01-10
申请号：US12025186
申请日：2008-02-04
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性获得振荡器或放大器。

6. 发明授权

US08044750B2 Nano-resonator including beam with composite structure 有权
标题翻译：纳米共振器包括具有复合结构的梁
公开(公告)号：US08044750B2
公开(公告)日：2011-10-25
申请号：US12071994
申请日：2008-02-28
申请人： Seong Chan Jun , Sun Il Kim , Chan Wook Baik
发明人： Seong Chan Jun , Sun Il Kim , Chan Wook Baik
IPC分类号： H03H9/24
CPC分类号： H03H9/2463 , B82Y15/00 , H03H9/02244 , Y10S977/712 , Y10S977/72 , Y10S977/724 , Y10S977/932
摘要： A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.
摘要翻译：包括具有复合结构的光束的纳米谐振器可以包括碳化硅束和/或金属导体。金属导体可以气相沉积在碳化硅束上。金属导体的密度可以低于碳化硅束的密度。

7. 发明申请

US20080297276A1 Nano-resonator including beam with composite structure 有权
标题翻译：纳米共振器包括具有复合结构的梁
公开(公告)号：US20080297276A1
公开(公告)日：2008-12-04
申请号：US12071994
申请日：2008-02-28
申请人： Seong Chan Jun , Sun Il Kim , Chan Wook Baik
发明人： Seong Chan Jun , Sun Il Kim , Chan Wook Baik
IPC分类号： H03H9/00
CPC分类号： H03H9/2463 , B82Y15/00 , H03H9/02244 , Y10S977/712 , Y10S977/72 , Y10S977/724 , Y10S977/932
摘要： A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.
摘要翻译：包括具有复合结构的光束的纳米谐振器可以包括碳化硅束和/或金属导体。金属导体可以气相沉积在碳化硅束上。金属导体的密度可以低于碳化硅束的密度。

8. 发明授权

US08563076B2 Substrate structure and method of forming the same 有权
公开(公告)号：US08563076B2
公开(公告)日：2013-10-22
申请号：US12222444
申请日：2008-08-08
申请人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
发明人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
IPC分类号： B32B3/10
CPC分类号： C23C14/16 , C23C14/022 , C23C14/5806 , H01L21/30655 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.

9. 发明授权

US08288082B2 Method of fabricating triode-structure field-emission device 有权
标题翻译：制造三极管结构场致发射器件的方法
公开(公告)号：US08288082B2
公开(公告)日：2012-10-16
申请号：US12292027
申请日：2008-11-10
申请人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
发明人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
IPC分类号： G03F7/11
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0455
摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
摘要翻译：示例性实施例提供了制造三极管结构场致发射器件的方法。可以在基板上依次形成阴极，绝缘层和栅极金属层。可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

10. 发明申请

US20090233240A1 Method of fabricating Triode-Structure field-emission device 有权
标题翻译：三极管结构场致发射器件的制造方法
公开(公告)号：US20090233240A1
公开(公告)日：2009-09-17
申请号：US12292027
申请日：2008-11-10
申请人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
发明人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
IPC分类号： G03F7/20
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0455
摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
摘要翻译：示例性实施例提供了制造三极管结构场致发射器件的方法。可以在基板上依次形成阴极，绝缘层和栅极金属层。可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式