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1. 发明授权

US06610616B2 Method for forming micro-pattern of semiconductor device 失效
公开(公告)号：US06610616B2
公开(公告)日：2003-08-26
申请号：US09888661
申请日：2001-06-25
申请人： Cha-won Koh , Sung-eun Hong , Min-ho Jung , Jin-soo Kim , Geun-su Lee , Jae-chang Jung
发明人： Cha-won Koh , Sung-eun Hong , Min-ho Jung , Jin-soo Kim , Geun-su Lee , Jae-chang Jung
IPC分类号： H01L2131
CPC分类号： G03F7/11 , G03F7/091
摘要： A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.

2. 发明授权

US06582883B2 Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物及其制备方法
公开(公告)号：US06582883B2
公开(公告)日：2003-06-24
申请号：US09891029
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , C08F220/40 , C08F2220/281 , C08F2220/325
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.
摘要翻译：具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并提高了产量。另一个优点是能够控制k值。

3. 发明授权

US06602650B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and methods of preparation thereof 有权
标题翻译：有机抗反射涂层聚合物，包含其的抗反射涂料组合物及其制备方法
公开(公告)号：US06602650B2
公开(公告)日：2003-08-05
申请号：US10099295
申请日：2002-03-13
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/36 , C07C251/54 , C08F220/40 , G03F7/091 , Y10S430/111 , C08F2220/281 , C08F216/38
摘要： A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value
摘要翻译：式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和来自这种较低层的反射光。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。此外，还可以控制k值

4. 发明授权

US06599678B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and method of preparation thereof 有权
公开(公告)号：US06599678B2
公开(公告)日：2003-07-29
申请号：US09888829
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , Y10S430/106 , Y10S430/111
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Further, it is also possible to control the k value and the increased hydrophobicity facilitates EBR (Edge Bead Removal).

5. 发明授权

US06562925B2 Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物及其制备方法
公开(公告)号：US06562925B2
公开(公告)日：2003-05-13
申请号：US09891004
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： C08F11802
CPC分类号： C08F220/28 , C08F220/18 , C08F220/36 , G03F7/091 , Y10S428/901 , Y10S430/151 , Y10T428/24917 , Y10T428/31504 , Y10T428/31667
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improving the production yields and controlling the k values. It is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.
摘要翻译：具有下式1的有机抗反射聚合物，其制备方法，包含有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。这样的优点使得能够形成适用于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了产量并控制了k值。也可以防止在涂覆完成后由于不均衡的酸度引起的底切。

6. 发明授权

US06486283B2 Organic anti-reflective coating polymer, anti-reflective coating composition methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物的制备方法
公开(公告)号：US06486283B2
公开(公告)日：2002-11-26
申请号：US09888893
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： C08F22010
CPC分类号： C08F220/36 , G03F7/091
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improves production yields and enables control of the k value. Further, it is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.
摘要翻译：具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性能引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射光引起的背反射和CD变化。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了生产成本并且能够控制k值。此外，还可以防止在涂覆完成后由于不均衡的酸度引起的底切。

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