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1. 发明授权

US06610616B2 Method for forming micro-pattern of semiconductor device 失效
公开(公告)号：US06610616B2
公开(公告)日：2003-08-26
申请号：US09888661
申请日：2001-06-25
申请人： Cha-won Koh , Sung-eun Hong , Min-ho Jung , Jin-soo Kim , Geun-su Lee , Jae-chang Jung
发明人： Cha-won Koh , Sung-eun Hong , Min-ho Jung , Jin-soo Kim , Geun-su Lee , Jae-chang Jung
IPC分类号： H01L2131
CPC分类号： G03F7/11 , G03F7/091
摘要： A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.

2. 发明授权

US06562925B2 Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物及其制备方法
公开(公告)号：US06562925B2
公开(公告)日：2003-05-13
申请号：US09891004
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： C08F11802
CPC分类号： C08F220/28 , C08F220/18 , C08F220/36 , G03F7/091 , Y10S428/901 , Y10S430/151 , Y10T428/24917 , Y10T428/31504 , Y10T428/31667
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improving the production yields and controlling the k values. It is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.
摘要翻译：具有下式1的有机抗反射聚合物，其制备方法，包含有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。这样的优点使得能够形成适用于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了产量并控制了k值。也可以防止在涂覆完成后由于不均衡的酸度引起的底切。

3. 发明授权

US06486283B2 Organic anti-reflective coating polymer, anti-reflective coating composition methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物的制备方法
公开(公告)号：US06486283B2
公开(公告)日：2002-11-26
申请号：US09888893
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： C08F22010
CPC分类号： C08F220/36 , G03F7/091
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices, improves production yields and enables control of the k value. Further, it is also possible to prevent undercutting due to an unbalanced acidity after finishing the coating.
摘要翻译：具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性能引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射光引起的背反射和CD变化。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，提高了生产成本并且能够控制k值。此外，还可以防止在涂覆完成后由于不均衡的酸度引起的底切。

4. 发明授权

US06602650B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and methods of preparation thereof 有权
标题翻译：有机抗反射涂层聚合物，包含其的抗反射涂料组合物及其制备方法
公开(公告)号：US06602650B2
公开(公告)日：2003-08-05
申请号：US10099295
申请日：2002-03-13
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/36 , C07C251/54 , C08F220/40 , G03F7/091 , Y10S430/111 , C08F2220/281 , C08F216/38
摘要： A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value
摘要翻译：式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和来自这种较低层的反射光。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。此外，还可以控制k值

5. 发明授权

US06599678B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and method of preparation thereof 有权
公开(公告)号：US06599678B2
公开(公告)日：2003-07-29
申请号：US09888829
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , Y10S430/106 , Y10S430/111
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Further, it is also possible to control the k value and the increased hydrophobicity facilitates EBR (Edge Bead Removal).

6. 发明授权

US06582883B2 Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物及其制备方法
公开(公告)号：US06582883B2
公开(公告)日：2003-06-24
申请号：US09891029
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , C08F220/40 , C08F2220/281 , C08F2220/325
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.
摘要翻译：具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并提高了产量。另一个优点是能够控制k值。

7. 发明授权

US06770720B2 Organic polymer for organic anti-reflective coating layer and preparation thereof 失效
标题翻译：有机抗反射涂层用有机聚合物及其制备方法
公开(公告)号：US06770720B2
公开(公告)日：2004-08-03
申请号：US10313480
申请日：2002-12-04
申请人： Jae-chang Jung , Keun-kyu Kong , Min-ho Jung , Sung-eun Hong , Ki-ho Baik
发明人： Jae-chang Jung , Keun-kyu Kong , Min-ho Jung , Sung-eun Hong , Ki-ho Baik
IPC分类号： C08F21634
CPC分类号： C08F220/28 , C08F212/08 , G03F7/091
摘要： Disclosed is an organic anti-reflective film composition suitable for use in submicrolithography, comprising a compound of Formula 13 and a compound of Formula 14. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.
摘要翻译：公开了一种适用于亚微光刻的有机抗反射膜组合物，其包含式13化合物和式14化合物。有机抗反射膜有效地吸收穿透抗反射膜顶部的光致抗蚀剂膜的光，反射膜，从而大大降低了驻波效应。使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中b，c，R'，R“，R1 ，R2，R3和R4是本文定义的那些。

8. 发明申请

US20060004161A1 Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US20060004161A1
公开(公告)日：2006-01-05
申请号：US10963129
申请日：2004-10-12
申请人： Jae-chang Jung , Keun Kong , Jin-soo Kim
发明人： Jae-chang Jung , Keun Kong , Jin-soo Kim
IPC分类号： B05D5/06
CPC分类号： G02B1/111 , C09D135/00 , G03F7/091 , Y10T428/12528
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性，其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

9. 发明授权

US07510979B2 Method for forming a pattern on a semiconductor device and semiconductor device resulting from the same 失效
标题翻译：在半导体器件上形成图案的方法和由其制成的半导体器件
公开(公告)号：US07510979B2
公开(公告)日：2009-03-31
申请号：US11770503
申请日：2007-06-28
申请人： Jae-chang Jung , Keun Kyu Kong , Jin-soo Kim
发明人： Jae-chang Jung , Keun Kyu Kong , Jin-soo Kim
IPC分类号： H01L21/302 , C08F234/02 , G03F7/00
CPC分类号： G02B1/111 , C09D135/00 , G03F7/091 , Y10T428/12528
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性，其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

10. 发明授权

US07108957B2 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
标题翻译：有机抗反射涂料组合物及其形成方法
公开(公告)号：US07108957B2
公开(公告)日：2006-09-19
申请号：US10619254
申请日：2003-07-14
申请人： Jae-chang Jung , Ki-soo Shin
发明人： Jae-chang Jung , Ki-soo Shin
IPC分类号： G03F7/032 , G03F7/11 , G03F7/038 , C08K5/54
CPC分类号： C09D183/04 , G03F7/091 , Y10S430/106 , Y10S430/115 , Y10S430/128 , Y10T428/24802 , C08L2666/04
摘要： The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.
摘要翻译：本公开涉及有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法。抗反射涂料组合物可用于防止光致抗蚀剂膜的下膜层或基材的反射，减少由光引起的驻波和光致抗蚀剂本身的厚度的变化，并且增加光致抗蚀剂图案的均匀性。更具体地说，本发明涉及包含特定的有机硅基聚合物的有机抗反射涂料组合物以及使用其形成光致抗蚀剂图案的方法。有机抗反射涂层组合物可以防止由其形成的抗反射膜的过度吸收，从而使膜的反射率最小化，使得其可以有效地去除驻波并增加光致抗蚀剂图案的均匀性。

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