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1. 发明申请

US20070134151A1 Ultrafine porous graphitic carbon fiber and preparation method thereof 有权
标题翻译：超细多孔石墨碳纤维及其制备方法
公开(公告)号：US20070134151A1
公开(公告)日：2007-06-14
申请号：US11607520
申请日：2006-12-01
申请人： Seong-Mu Jo , Dong-Young Kim , Byung-Doo Chin , Sung-Eun Hong
发明人： Seong-Mu Jo , Dong-Young Kim , Byung-Doo Chin , Sung-Eun Hong
IPC分类号： C01B31/04 , D01F9/12
CPC分类号： D01F9/21 , C01B32/382 , D01D5/0007 , D01F1/10 , D01F6/10 , D01F6/12 , D01F6/32 , H01M4/587 , H01M4/625 , H01M4/9083 , H01M4/926 , H01M4/96
摘要： The present invention discloses an ultrafine graphitic carbon fiber and a preparation method thereof. An ultrafine fiber having a diameter of 1 to 3000 nm is prepared by electrospinning a halogenated polymer solution containing a metal compound inducing graphitization. In carbonization, an ultrafine porous graphitic carbon fiber having a large specific surface area, micropores and macropores is prepared by the graphitization by a metal catalyst generated from the metal compound. The ultrafine carbon fiber can be used as a carbon material for storing hydrogen, an adsorbing material of biochemically noxious substances, an electrode material of a supercapacitor, a secondary cell and a fuel cell, and a catalyst carrier material.
摘要翻译：本发明公开了一种超细石墨碳纤维及其制备方法。通过静电纺丝含有引起石墨化的金属化合物的卤化聚合物溶液制备直径为1至3000nm的超细纤维。在碳化中，通过由金属化合物生成的金属催化剂的石墨化制备具有大比表面积的超细多孔石墨碳纤维，微孔和大孔。超细碳纤维可以用作储存氢的碳材料，生化有害物质的吸附材料，超级电容器的电极材料，二次电池和燃料电池以及催化剂载体材料。

2. 发明授权

US06699644B1 Process for forming a photoresist pattern comprising alkaline treatment 失效
标题翻译：用于形成包含碱处理的光致抗蚀剂图案的方法
公开(公告)号：US06699644B1
公开(公告)日：2004-03-02
申请号：US09651443
申请日：2000-08-30
申请人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/091 , G03F7/0395 , G03F7/168 , Y10S430/151
摘要： The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.
摘要翻译：本发明提供一种减少或消除在光致抗蚀剂膜上形成不良图案的方法，其通过在曝光之前使光致抗蚀剂膜与碱性溶液接触。本发明的方法显着地减少或防止T顶部和顶部损失。

3. 发明授权

US06489432B2 Organic anti-reflective coating polymer and preparation thereof 有权
标题翻译：有机抗反射涂层聚合物及其制备方法
公开(公告)号：US06489432B2
公开(公告)日：2002-12-03
申请号：US09747362
申请日：2000-12-22
申请人： Min-Ho Jung , Sung-Eun Hong , Jae-Chang Jung , Geun-Su Lee , Ki-Ho Baik
发明人： Min-Ho Jung , Sung-Eun Hong , Jae-Chang Jung , Geun-Su Lee , Ki-Ho Baik
IPC分类号： C08G224
CPC分类号： C08F8/00 , C08F2800/10 , C08F116/36
摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
摘要翻译：本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。本发明的ARC还显着地减少或消除驻波效应和反射性切口。因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。此外，本发明的ARC显着提高了这种半导体器件的生产成本。

4. 发明授权

US06368768B1 Organic anti-reflective coating material and its preparation 失效
标题翻译：有机防反射涂料及其制备方法
公开(公告)号：US06368768B1
公开(公告)日：2002-04-09
申请号：US09501049
申请日：2000-02-09
申请人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： G03F7004
CPC分类号： C08F20/18 , C07C69/54 , C07C2603/24
摘要： Polymers are provided having the following formula I, II or III: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers. The ARC also eliminates the standing waves and reflective notching due to the optical properties of lower layers on the wafer, and due to the changes in the thickness of the photosensitive film applied thereon. This results in the formation of stable ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAM semiconductor devices and a great improvement in the production yield.
摘要翻译：提供具有下列式I，II或III的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光的用于亚微光刻工艺的抗反射涂层（ARC）材料。聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。由于晶片上的下层的光学特性，并且由于其上施加的感光膜的厚度的变化，ARC还消除了驻波和反射性凹陷。这导致形成适合64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并且生产产量大大提高。

5. 发明授权

US06309790B1 Organic anti-reflective coating material and its preparation 失效
标题翻译：有机防反射涂料及其制备方法
公开(公告)号：US06309790B1
公开(公告)日：2001-10-30
申请号：US09499873
申请日：2000-02-07
申请人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： G03F7004
CPC分类号： H01L21/02118 , C07C67/14 , C07C69/54 , C07C2603/24 , C08F220/18 , C08F220/28 , C08F220/32 , C09D133/068 , C09D133/14 , H01L21/02282 , H01L21/0276 , H01L21/312 , Y10S430/111
摘要： Polymers are provided having the following formulas I and II: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers.
摘要翻译：提供具有以下分子式I和II的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光器的用于亚微光刻工艺的抗反射涂层（ARC）材料。聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。

6. 发明申请

US20100324330A1 Process for Preventing Development Defect and Composition for Use in the Same 审中-公开
标题翻译：防止发展缺陷和组合使用的过程
公开(公告)号：US20100324330A1
公开(公告)日：2010-12-23
申请号：US12853640
申请日：2010-08-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： C07C309/02 , C07C53/21 , C07C55/14
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

7. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

8. 发明授权

US06780953B2 Organic polymer for anti-reflective coating layer and preparation thereof 失效
标题翻译：用于抗反射涂层的有机聚合物及其制备方法
公开(公告)号：US06780953B2
公开(公告)日：2004-08-24
申请号：US10293022
申请日：2002-11-12
申请人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
发明人： Min-Ho Jung , Sung-Eun Hong , Ki-Ho Baik
IPC分类号： C08F22068
CPC分类号： C07C69/54 , C07C2603/24 , C08F220/14 , C08F220/18 , C08F220/28
摘要： The present invention provides a polymer that can be used as an anti-reflective coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
摘要翻译：本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。本发明的聚合物在例如使用KrF（248nm）或ArF（193nm）激光器作为光源的亚微光刻工艺中特别有用。本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。本发明的ARC还显着地减少或消除驻波效应和反射性切口。因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。此外，本发明的ARC显着提高了这种半导体器件的生产成本。

9. 发明授权

US06593446B1 Organic polymer for organic anti-reflective coating layer and preparation thereof 失效
标题翻译：有机抗反射涂层用有机聚合物及其制备方法
公开(公告)号：US06593446B1
公开(公告)日：2003-07-15
申请号：US09657069
申请日：2000-09-07
申请人： Jae-Chang Jung , Keun-Kyu Kong , Min-Ho Jung , Sung-Eun Hong , Geun-Su Lee , Ki-Ho Baik
发明人： Jae-Chang Jung , Keun-Kyu Kong , Min-Ho Jung , Sung-Eun Hong , Geun-Su Lee , Ki-Ho Baik
IPC分类号： C08G600
CPC分类号： G03F7/091 , C08F212/08 , C08F216/38 , C08K5/42 , C08L25/08 , C08L29/14 , C08L33/066 , C09D125/08 , C09D129/14 , G03F7/0045 , G03F7/038 , C08L2666/04 , C08F2220/1808 , C08F212/14
摘要： The present invention provides an organic anti-reflective film composition suitable for use in submicrolithography. The composition comprises a compound of chemical formula 11 and a compound of chemical formula 12. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein a, b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.
摘要翻译：本发明提供适用于亚微光刻的有机抗反射膜组合物。该组合物包含化学式11的化合物和化学式12的化合物。有机抗反射膜有效地吸收穿过抗反射膜顶部的光致抗蚀剂膜的光，从而大大降低了驻波效应。使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中a，b，c，R'，R“ ，R1，R2，R3和R4是本文定义的那些。

10. 发明授权

US06582883B2 Organic anti-reflective coating polymer, anti-reflective coating composition and methods of preparation thereof 有权
标题翻译：有机抗反射涂料聚合物，抗反射涂料组合物及其制备方法
公开(公告)号：US06582883B2
公开(公告)日：2003-06-24
申请号：US09891029
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , C08F220/40 , C08F2220/281 , C08F2220/325
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.
摘要翻译：具有下列通式1的有机抗反射聚合物，其制备方法，包含所述有机抗反射聚合物的抗反射涂料组合物和由其制备的抗反射涂层的制备方法。包含该聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，从而防止由这种较低层衍射的和反射的光引起的背反射和CD变化。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并提高了产量。另一个优点是能够控制k值。

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