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    • 7. 发明申请
    • CHAMBER CLEANING METHODS USING FLUORINE CONTAINING CLEANING COMPOUNDS
    • 使用含有清洁剂的氟化物的清洁方法
    • US20110088718A1
    • 2011-04-21
    • US12904818
    • 2010-10-14
    • Robert Torres, JR.Carrie L. Wyse
    • Robert Torres, JR.Carrie L. Wyse
    • B08B7/00
    • C23C16/4405B08B7/0035
    • Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants.
    • 描述了清洁用于制造电子部件的处理室的方法。 所述方法可以包括向处理室提供清洁气体混合物的步骤,其中清洁气体混合物可以包括含氟前体,并且其中清洁气体混合物从暴露于所述处理室的处理室的内表面去除污染物 清洁气体混合物。 所述方法还可以包括以下步骤:从处理室中除去清洁气体混合物的反应产物,以及在反应产物从处理室排出之后将基底提供给处理室。 清洁气体混合物可以包括一种或多种氢化氟化醚,并且污染物可以包括一种或多种含锡污染物。
    • 8. 发明申请
    • FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS
    • 用于掺杂导电氧化物薄膜的氟化合物
    • US20110070371A1
    • 2011-03-24
    • US12884490
    • 2010-09-17
    • Tim GessertXiaonan LiTeresa M. BarnesRobert Torres, JR.Carrie L. Wyse
    • Tim GessertXiaonan LiTeresa M. BarnesRobert Torres, JR.Carrie L. Wyse
    • C23C16/08
    • C23C16/45523C23C16/407C23C16/50
    • Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
    • 描述了通过化学气相沉积在衬底上形成导电性氟掺杂金属氧化物层的方法。 所述方法可以包括在处理室中加热衬底,并将含金属的前体和含氟前体引入到处理室中。 所述方法还可以包括向处理室中加入含氧前体。 使前体反应以在衬底上沉积氟掺杂的金属氧化物层。 方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。 这些方法可以包括在处理室中提供衬底,并将含金属的前体和含氟前体引入处理室。 可以形成包括来自含金属的前体和含氟前体的物质的等离子体。 该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。
    • 9. 发明申请
    • Leak Characterization Apparatuses and Methods for Fluid Storage Containers
    • 流体储存容器的泄漏特性设备和方法
    • US20090025456A1
    • 2009-01-29
    • US12245483
    • 2008-10-03
    • Stuart MullerRobert Torres, JR.
    • Stuart MullerRobert Torres, JR.
    • G01M3/04
    • G01M3/229
    • An apparatus for determining a leak rate of a gas from a closed valve is disclosed. The apparatus may include a vacuum pump, a pressure measuring device, a monitoring device, and a computer. The vacuum pump may be configured to couple downstream of the closed valve and decrease the pressure of the downstream side of the closed valve. The pressure measuring device may be configured to couple with the downstream side and determine the pressure. The monitoring device may be configured to couple with the downstream side and monitor a gas, where the gas may be emitted from the closed valve and be characterized by a mass. The monitoring device may further be configured to determine the mass. The computer may be configured to control the vacuum pump based on the pressure, and determine the leak rate of the gas based at least in part on the mass.
    • 公开了一种用于确定来自封闭阀的气体泄漏率的装置。 该装置可以包括真空泵,压力测量装置,监视装置和计算机。 真空泵可以被配置为联接关闭的阀的下游并减小关闭阀的下游侧的压力。 压力测量装置可以被配置成与下游侧连接并确定压力。 监测装置可以被配置为与下游侧联接并监测气体,其中气体可以从封闭的阀发射并且通过质量来表征。 监测装置还可以被配置为确定质量。 计算机可以被配置为基于压力来控制真空泵,并且至少部分地基于质量确定气体的泄漏率。
    • 10. 发明申请
    • Leak Characterization Apparatuses and Methods for Fluid Storage Containers
    • 流体储存容器的泄漏特性设备和方法
    • US20090025455A1
    • 2009-01-29
    • US12245469
    • 2008-10-03
    • Stuart MullerRobert Torres, JR.
    • Stuart MullerRobert Torres, JR.
    • G01M3/04
    • G01M3/229
    • According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor.
    • 根据本发明,公开了一种用于表征流体储存容器中泄漏的装置。 该装置可以包括阀联接器,气体歧管和处理器。 阀联接器可将装置与液体储存容器上的封闭阀联接。 气体歧管可以与阀联接器联接,并且可以包括与气体监测装置连接的第一分支。 气体监测装置可以扫描可由流体储存容器的封闭阀发射的多种气体。 处理器可以可操作地接收表示由监视器检测到的多个气体中的一个或多个气体的质量的气体监测装置数据。