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1. 发明申请

US20110070371A1 FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS 失效
标题翻译：用于掺杂导电氧化物薄膜的氟化合物
公开(公告)号：US20110070371A1
公开(公告)日：2011-03-24
申请号：US12884490
申请日：2010-09-17
申请人： Tim Gessert , Xiaonan Li , Teresa M. Barnes , Robert Torres, JR. , Carrie L. Wyse
发明人： Tim Gessert , Xiaonan Li , Teresa M. Barnes , Robert Torres, JR. , Carrie L. Wyse
IPC分类号： C23C16/08
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/50
摘要： Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
摘要翻译：描述了通过化学气相沉积在衬底上形成导电性氟掺杂金属氧化物层的方法。所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。所述方法还可以包括向处理室中加入含氧前体。使前体反应以在衬底上沉积氟掺杂的金属氧化物层。方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。可以形成包括来自含金属的前体和含氟前体的物质的等离子体。该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。

2. 发明授权

US08425978B2 Fluorine compounds for doping conductive oxide thin films 失效
标题翻译：用于掺杂导电氧化物薄膜的氟化合物
公开(公告)号：US08425978B2
公开(公告)日：2013-04-23
申请号：US12884490
申请日：2010-09-17
申请人： Tim Gessert , Xiaonan Li , Teresa M. Barnes , Robert Torres, Jr. , Carrie L. Wyse
发明人： Tim Gessert , Xiaonan Li , Teresa M. Barnes , Robert Torres, Jr. , Carrie L. Wyse
IPC分类号： C23C16/00 , C23C16/08
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/50
摘要： Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
摘要翻译：描述了通过化学气相沉积在衬底上形成导电氟掺杂金属氧化物层的方法。所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。所述方法还可以包括向处理室中加入含氧前体。使前体反应以在衬底上沉积氟掺杂的金属氧化物层。方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。可以形成包括来自含金属的前体和含氟前体的物质的等离子体。该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。

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