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1. 发明授权

US06420199B1 Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：制造具有铝镓铟氮化物结构和反射镜叠层的发光器件的方法
公开(公告)号：US06420199B1
公开(公告)日：2002-07-16
申请号：US09923711
申请日：2001-08-06
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H05L2120
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

2. 发明授权

US06320206B1 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：具有晶片结合的铝镓铟氮化物结构和反射镜叠层的发光器件
公开(公告)号：US06320206B1
公开(公告)日：2001-11-20
申请号：US09245435
申请日：1999-02-05
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H01L3300
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

3. 发明授权

US5610413A Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor 失效
标题翻译： II-VI族化合物半导体发光器件及其欧姆接触
公开(公告)号：US5610413A
公开(公告)日：1997-03-11
申请号：US484088
申请日：1995-06-07
申请人： Yongping Fan , Jung Han , Arto V. Nurmikko , Robert L. Gunshor , Li He
发明人： Yongping Fan , Jung Han , Arto V. Nurmikko , Robert L. Gunshor , Li He
IPC分类号： H01L21/36 , H01L21/44 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/26 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/223 , H01S5/347 , H01L33/00
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02395 , H01L21/024 , H01L21/02417 , H01L21/02469 , H01L21/02485 , H01L21/0251 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/44 , H01L33/06 , H01L33/08 , H01L33/14 , H01S5/0421 , H01L27/156 , H01L33/26 , H01L33/28 , H01L33/40 , H01S5/2231
摘要： Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.
摘要翻译：公开了包括设置在第一和第二阻挡层之间的阱层的至少一个II-VI量子阱区的II-VI族化合物半导体发光器件。量子阱区夹在II-VI半导体材料的第一和第二覆层之间。第一包层与第一阻挡层和III-V族化合物半导体材料的衬底形成并晶格匹配。第二包层与第二阻挡层晶格匹配。量子阱层包括具有式AxB（1-x）C的II-VI化合物半导体材料，其中A和B是来自组II的两个不同元素，C是来自第VI族的至少一种元素。当第二包覆层具有p型导电性时，可以使用根据本发明的渐变带隙欧姆接触。分级带隙接触可以是单个连续分级的II-VI p型区域或多个单元，其中每个单元分别具有第一和第二p型II-VI半导体材料的第一和第二薄层。本发明的另一实施例公开了能够发射四种颜色的单片多色发光元件及其制造方法。单片多色元件包括形成在单个III-V衬底上的四个II-VI半导体发光器件。

4. 发明申请

US20090272191A1 Opto-acoustic methods and apparatus for performing high resolution acoustic imaging and other sample probing and modification operations 有权
标题翻译：用于执行高分辨率声学成像和其他样本探测和修改操作的光学声学方法和装置
公开(公告)号：US20090272191A1
公开(公告)日：2009-11-05
申请号：US11921635
申请日：2006-05-30
申请人： Humphery J Maris , Arto V. Nurmikko
发明人： Humphery J Maris , Arto V. Nurmikko
IPC分类号： G01N29/04
CPC分类号： A61B8/00 , A61B5/0097 , G01N29/0681 , G01N29/221 , G01N29/2418 , G01N2291/02827 , G01N2291/02854 , G01N2291/0423 , G01N2291/0427 , G01S15/8965
摘要： One aspect of the present invention concerns scanning acoustic microscopes in which sound waves used for imaging purposes are generated by an opto-acoustical process. A scanning acoustic microscope of the present invention includes an opto-acoustic transducer assembly having a substrate. Formed on or in the substrate of the opto-acoustic transducer assembly is a layer of opto-acoustic material. When pulsed light waves impinge the layer of opto-acoustic material, pulsed sound waves are created. An acoustic lens also formed in the substrate focuses the pulsed sound waves which are then used to probe the physical and mechanical properties of a sample object. Pulsed sound waves reflecting off the sample object return to the opto-acoustic transducer where the pulsed sound waves impinge the layer of opto-acoustic material. The impinging sound waves change at least one optical property of the layer of opto-acoustic material. This change, which is dependent on changes to the pulsed sound waves caused by the interaction of the pulsed sound waves and the sample object, is then sensed using pulsed light waves. In one possible embodiment of the present invention, the layer of opto-acoustic material is deposited on the substrate in a plurality of non-contiguous concentric rings. The plurality of non-contiguous concentric rings operates as an acoustic analogue of a Fresnel lens.
摘要翻译：本发明的一个方面涉及扫描声学显微镜，其中用于成像目的的声波通过光学声学过程产生。本发明的扫描型声学显微镜包括具有基板的光声换能器组件。形成在光声换能器组件的基底上或其中的光声材料层。当脉冲光波冲击光声材料层时，产生脉冲声波。也形成在基板中的声透镜聚焦脉冲声波，然后将其用于探测样品物体的物理和机械特性。反射离开样品物体的脉冲声波返回到光声换能器，其中脉冲声波撞击光声材料层。入射的声波改变光声材料层的至少一个光学特性。然后使用脉冲光波来检测由脉冲声波和样本物体的相互作用引起的对脉冲声波的变化的这种变化。在本发明的一个可能实施例中，光声材料层在多个不连续的同心环中沉积在基底上。多个不连续的同心环作为菲涅尔透镜的声学类似物操作。

5. 发明授权

US08302480B2 Enhanced ultra-high resolution acoustic microscope 有权
标题翻译：增强型超高分辨率声学显微镜
公开(公告)号：US08302480B2
公开(公告)日：2012-11-06
申请号：US12449415
申请日：2008-02-05
申请人： Humphrey J. Maris , Arto V. Nurmikko
发明人： Humphrey J. Maris , Arto V. Nurmikko
IPC分类号： G01N29/06
CPC分类号： G01N29/0681 , G01N29/2418 , G01S15/8965 , G10K15/046
摘要： An optical-acoustic transducer structure includes at least one metal or semiconducting film in which a part of a pump light pulse is absorbed to generate a sound pulse; and at least one dielectric film. The thicknesses and optical properties of the at least one metal or semiconducting film and the at least one dielectric film are selected so that a returning sound pulse results in a measurable change in the optical reflectivity and/or some other optical characteristic of the transducer structure. The transducer structure includes a resonant cavity, and an output surface that is shaped so as to provide no significant focusing of generated sound waves when the sound waves are launched towards a surface of the sample.
摘要翻译：光声换能器结构包括至少一个金属或半导体膜，其中泵浦光脉冲的一部分被吸收以产生声脉冲; 和至少一个电介质膜。选择至少一种金属或半导体膜和至少一种电介质膜的厚度和光学性质，使得返回的声脉冲导致换能器结构的光学反射率和/或某些其他光学特性的可测量的变化。换能器结构包括谐振腔和输出表面，其被形成为当声波朝向样品的表面发射时不产生所产生的声波的显着聚焦。

6. 发明授权

US07064827B2 Optical tracking and detection of particles by solid state energy sources 有权
标题翻译：固态能源的光学跟踪和粒子检测
公开(公告)号：US07064827B2
公开(公告)日：2006-06-20
申请号：US10442795
申请日：2003-05-20
申请人： Arto V. Nurmikko , Richard K. Chang
发明人： Arto V. Nurmikko , Richard K. Chang
IPC分类号： G01N21/00 , G01J3/30
CPC分类号： G01N15/1456 , G01N2015/1493
摘要： A particle detector has a chamber defining a pathway that a target particle follows between an entry and an exit point, a solid-state energy source such as an LED, and a re-emission sensor. The energy source imparts energy to the particle between the two points, and the sensor includes an arcuate or multi-planar lens to focus energy re-emitted by the particle. The particle is identifiable by its re-emitted energy spectrum. A scanner re-directs the beam from a single energy source to track the particle between the entry and exit points. Alternatively, the energy source is a plurality of source elements that each scan the particle at a single position. Another embodiment is a chipscale detector system wherein energy source elements are disposed on a source layer, sensor elements are disposed on a sensor layer, and one or more target particles to be detected are retained on a capture layer disposed therebetween.
摘要翻译：粒子检测器具有限定目标粒子在入口和出口点之间的路径，固体能量源（例如LED）和再发射传感器的腔室。能量源向两点之间的颗粒施加能量，并且传感器包括用于聚焦由颗粒再发射的能量的弧形或多平面透镜。颗粒可以通过其再发射的能谱来识别。扫描仪重新引导来自单个能量源的光束以跟踪进入点和出口点之间的粒子。或者，能量源是多个源元素，每个元素在单个位置扫描粒子。另一个实施例是一种芯片尺寸检测器系统，其中能量源元件设置在源层上，传感器元件设置在传感器层上，并且待检测的一个或多个目标颗粒被保持在设置在其之间的捕获层上。

7. 发明授权

US06822991B2 Light emitting devices including tunnel junctions 有权
标题翻译：发光器件包括隧道结
公开(公告)号：US06822991B2
公开(公告)日：2004-11-23
申请号：US10261534
申请日：2002-09-30
申请人： William D. Collins, III , Nathan F. Gardner , Arto V. Nurmikko
发明人： William D. Collins, III , Nathan F. Gardner , Arto V. Nurmikko
IPC分类号： H01S500
CPC分类号： H01L33/04 , H01L27/15 , H01L33/0016 , H01L33/08 , H01L33/10 , H01L33/46 , H01S5/0224 , H01S5/02288 , H01S5/18341 , H01S5/3095
摘要： A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second conductivity type, both thinner than a layer of first conductivity type and a layer of second conductivity type surrounding the first active region. The tunnel junction permits vertical stacking of the active regions, which may increase the light generated by a device without increasing the size of the source.
摘要翻译：发光器件包括第一有源区，第二有源区和隧道结。隧道结包括第一导电类型的层和比第一导电类型的层薄的第二导电类型的层和围绕第一有源区的第二导电类型的层。隧道结允许有源区域的垂直堆叠，这可以增加由器件产生的光而不增加源的尺寸。

8. 发明授权

US08567253B2 Opto-acoustic methods and apparatus for performing high resolution acoustic imaging and other sample probing and modification operations 有权
标题翻译：用于执行高分辨率声学成像和其他样本探测和修改操作的光学声学方法和装置
公开(公告)号：US08567253B2
公开(公告)日：2013-10-29
申请号：US11921635
申请日：2006-05-30
申请人： Humphrey J. Maris , Arto V. Nurmikko
发明人： Humphrey J. Maris , Arto V. Nurmikko
IPC分类号： G01N29/34 , G01N29/06
CPC分类号： A61B8/00 , A61B5/0097 , G01N29/0681 , G01N29/221 , G01N29/2418 , G01N2291/02827 , G01N2291/02854 , G01N2291/0423 , G01N2291/0427 , G01S15/8965
摘要： An opto-acoustic transducer assembly includes a substrate; at least one layer of opto-acoustic material coupled to a surface of the substrate, where the at least one layer of opto-acoustic material generates sound waves when struck by pulses of pump light; and an acoustic lens configured to focus sound waves generated by the at least one layer of opto-acoustic material towards a sample. The acoustic lens is further configured to collect sound waves returning from the sample and to direct the returning sound waves to the at least one layer of opto-acoustic material. In one non-limiting embodiment the at least one layer of opto-acoustic material is interposed between the substrate and the acoustic lens, and the substrate is substantially transparent to light having wavelengths of interest.
摘要翻译：光声换能器组件包括基底; 耦合到所述衬底的表面的至少一层光声材料层，其中所述至少一层光声材料层在被泵浦光脉冲击中时产生声波; 以及声透镜，被配置为将由所述至少一层光声材料层产生的声波聚焦到样品。声透镜还被配置为收集从样品返回的声波并将返回的声波引导到至少一层光声材料层。在一个非限制性实施例中，至少一层光声材料层插入在基底和声透镜之间，并且基底对于具有感兴趣波长的光基本上是透明的。

9. 发明申请

US20110036171A1 ENHANCED ULTRA-HIGH RESOLUTION ACOUSTIC MICROSCOPE 有权
标题翻译：增强超分辨率声学显微镜
公开(公告)号：US20110036171A1
公开(公告)日：2011-02-17
申请号：US12449415
申请日：2008-02-05
申请人： Humphrey J. Maris , Arto V. Nurmikko
发明人： Humphrey J. Maris , Arto V. Nurmikko
IPC分类号： G01N29/00
CPC分类号： G01N29/0681 , G01N29/2418 , G01S15/8965 , G10K15/046
摘要： An optical-acoustic transducer structure includes at least one metal or semiconducting film in which a part of a pump light pulse is absorbed to generate a sound pulse; and at least one dielectric film. The thicknesses and optical properties of the at least one metal or semiconducting film and the at least one dielectric film are selected so that a returning sound pulse results in a measurable change in the optical reflectivity and/or some other optical characteristic of the transducer structure. The transducer structure includes a resonant cavity, and an output surface that is shaped so as to provide no significant focusing of generated sound waves when the sound waves are launched towards a surface of the sample.
摘要翻译：光声换能器结构包括至少一个金属或半导体膜，其中泵浦光脉冲的一部分被吸收以产生声脉冲; 和至少一个电介质膜。选择至少一种金属或半导体膜和至少一种电介质膜的厚度和光学性质，使得返回的声脉冲导致换能器结构的光学反射率和/或某些其他光学特性的可测量的变化。换能器结构包括谐振腔和输出表面，其被形成为当声波朝向样品的表面发射时不产生所产生的声波的显着聚焦。

10. 发明申请

US20090052484A1 Magneto-optoelectronic switch and sensor 有权
公开(公告)号：US20090052484A1
公开(公告)日：2009-02-26
申请号：US12288173
申请日：2008-10-16
申请人： Arto V. Nurmikko
发明人： Arto V. Nurmikko
IPC分类号： G01R33/02 , H01S3/00
CPC分类号： G01R33/093 , B82Y25/00 , H01S5/0261 , H01S5/0265 , H01S5/0607 , H01S5/183
摘要： A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

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