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1. 发明授权

US06800500B2 III-nitride light emitting devices fabricated by substrate removal 有权
公开(公告)号：US06800500B2
公开(公告)日：2004-10-05
申请号：US10631001
申请日：2003-07-29
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
IPC分类号： H01L2120
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.

2. 发明授权

US06320206B1 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：具有晶片结合的铝镓铟氮化物结构和反射镜叠层的发光器件
公开(公告)号：US06320206B1
公开(公告)日：2001-11-20
申请号：US09245435
申请日：1999-02-05
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H01L3300
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

3. 发明授权

US06593160B2 Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip 有权
标题翻译：在大功率LED芯片上的反射可焊接触点中增加镜面反射率的扩散势垒
公开(公告)号：US06593160B2
公开(公告)日：2003-07-15
申请号：US09778174
申请日：2001-02-06
申请人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
发明人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
IPC分类号： H01L2158
CPC分类号： H01L33/405
摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.
摘要翻译：可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。在替代实施例中，扩散层由非导电材料制成。

4. 发明授权

US06420199B1 Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：制造具有铝镓铟氮化物结构和反射镜叠层的发光器件的方法
公开(公告)号：US06420199B1
公开(公告)日：2002-07-16
申请号：US09923711
申请日：2001-08-06
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H05L2120
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

5. 发明授权

US07491565B2 III-nitride light emitting devices fabricated by substrate removal 有权
标题翻译：通过衬底去除制造的III族氮化物发光器件
公开(公告)号：US07491565B2
公开(公告)日：2009-02-17
申请号：US11330209
申请日：2006-01-10
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
摘要翻译：描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

6. 发明授权

US06280523B1 Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权
标题翻译：通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪
公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

7. 发明授权

US06222207B1 Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip 有权
标题翻译：用于增加大功率LED芯片上可反射可焊接触点的镜面反射率的扩散屏障
公开(公告)号：US06222207B1
公开(公告)日：2001-04-24
申请号：US09317647
申请日：1999-05-24
申请人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
发明人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
IPC分类号： H01L3300
CPC分类号： H01L33/405
摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.
摘要翻译：可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。在替代实施例中，扩散层由非导电材料制成。

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