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1. 发明公开

US20240116075A1 SUBSTRATE, SELECTIVE FILM DEPOSITION METHOD, DEPOSITION FILM OF ORGANIC MATTER, AND ORGANIC MATTER 审中-公开
公开(公告)号：US20240116075A1
公开(公告)日：2024-04-11
申请号：US18273353
申请日：2022-01-28
申请人： CENTRAL GLASS COMPANY, LIMITED
发明人： Takuya OKADA , Junki YAMAMOTO , Takahisa TANIGUCHI , Kazuki YOSHIURA , Katsuya KONDO , Soichi KUMON , Tatsuo MIYAZAKI
IPC分类号： B05D1/32 , B05D3/10
CPC分类号： B05D1/32 , B05D3/107
摘要： A selective film deposition method includes exposing a substrate having a structure on which a first surface region containing a metal element and a second surface region containing a nonmetal inorganic material are both exposed, to a solution containing an organic substance represented by formula (1) shown below and a solvent to deposit a film of the organic substance on the first surface region selectively over the second surface region: R1(X)m (1) wherein R1 is a C4-C100 hydrocarbon group optionally containing a heteroatom or a halogen atom, and m hydrogen atoms of the hydrocarbon group are replaced with X; X is —PO3(R2)2, —O—PO3(R2)2, —CO2R2, —SR2, or —SSR1; each R2 is a hydrogen atom or a C1-C6 alkyl group; and m is a positive integer, and m/r is 0.01 to 0.25 where r is the number of carbons of the hydrocarbon group.

2. 发明申请

US20220081575A1 SUBSTRATE, SELECTIVE FILM DEPOSITION METHOD, DEPOSITION FILM OF ORGANIC MATTER, AND ORGANIC MATTER 有权
公开(公告)号：US20220081575A1
公开(公告)日：2022-03-17
申请号：US17421507
申请日：2020-01-07
申请人： CENTRAL GLASS COMPANY, LIMITED
发明人： Masutaka SHINMEN , Takuya OKADA , Junki YAMAMOTO , Ryo NADANO , Tatsuo MIYAZAKI
IPC分类号： C09D7/20 , C07C211/03 , B05D1/00
摘要： The selective film deposition method according to an embodiment of the present disclosure includes depositing a film of an organic matter represented by the following formula (1) on a substrate having a structure where a first surface region containing at least one of a metal or a metal oxide and a second surface region containing a nonmetallic inorganic material are both exposed, selectively in the first surface region than in the second surface region, wherein N represents a nitrogen atom; and R1 represents a C1-C30 hydrocarbon group optionally containing a hetero atom or a halogen atom, R2, R3, R4, and R5 each independently represent a hydrogen atom or a C1-C10 hydrocarbon group optionally containing a hetero atom or a halogen atom, where the hydrocarbon group covers a branched or cyclic hydrocarbon group when containing 3 or more carbon atoms.

3. 发明申请

US20180138053A1 Wet Etching Method and Etching Solution 审中-公开
公开(公告)号：US20180138053A1
公开(公告)日：2018-05-17
申请号：US15573302
申请日：2016-06-22
申请人： Central Glass Company, Limited
发明人： Akifumi YAO , Kunihiro YAMAUCHI , Masaki FUJIWARA , Tatsuo MIYAZAKI
IPC分类号： H01L21/3213 , C23F1/14 , H01L21/311 , H01L21/306
CPC分类号： H01L21/32134 , C23F1/10 , C23F1/14 , H01L21/30612 , H01L21/31111 , H01L43/10 , H01L43/12 , H01L45/1675
摘要： Disclosed is a wet etching method for etching a metal-containing film on a substrate with the use of an etching solution, wherein the etching solution contains an organic solvent and a β-diketone having a trifluoromethyl group and a carbonyl group bonded to each other, and wherein the metal-containing film contains a metal element capable of forming a complex with the β-diketone.

4. 发明申请

US20140360884A1 Fluorine Gas Generating Device 审中-公开
标题翻译：氟气发生装置
公开(公告)号：US20140360884A1
公开(公告)日：2014-12-11
申请号：US14467761
申请日：2014-08-25
申请人： Central Glass Company, Limited
发明人： Isamu MORI , Tatsuo MIYAZAKI , Akifumi YAO , Takuya KITA
IPC分类号： C25B1/24 , C25B15/08
CPC分类号： C25B1/245 , C01B7/20 , C25B15/08
摘要： A fluorine gas generating device 100 is provided which facilitates the maintenance operation of recovery and replacement of an adsorbing material that adsorbs hydrogen fluoride and supplies fluorine gas in a stable manner. The device comprises a refining line 20 that includes refining devices that, with the aid of adsorbing material, remove hydrogen fluoride gas that has been evaporated from a molten salt of an electrolytic tank 1 and mixed to fluorine gas generated at a positive pole 103a of the electrolytic tank. The refining line 20 comprises a first refining section 21 that includes at least two refining devices arranged in parallel and a second refining section 22 that includes at least two refining devices arranged in parallel and is positioned downstream of the first refining section 21. Fluorine gas that has passed through either one of the refining devices of the first refining section 21 is selectively led to either one of the refining devices of the second refining section.
摘要翻译：提供了一种氟气发生装置100，其有助于回收和更换吸附氟化氢并以稳定的方式供应氟气的吸附材料的维护操作。该装置包括精炼管线20，其包括精炼装置，该装置借助于吸附材料除去从电解槽1的熔融盐蒸发的氟化氢气体，并混合到在正极103a处产生的氟气体电解槽。精炼生产线20包括第一精炼部分21，其包括平行布置的至少两个精炼装置和第二精炼部分22，该第二精炼部分22包括平行排列并且位于第一精炼部分21的下游的至少两个精炼装置。氟气已经通过了第一精炼部21的精炼装置中的任一个选择性地被引导到第二精炼部的精炼装置中的任一个。

5. 发明公开

US20240055273A1 Wet Etching Solution and Wet Etching Method 审中-公开
公开(公告)号：US20240055273A1
公开(公告)日：2024-02-15
申请号：US18271185
申请日：2022-01-04
申请人： Central Glass Company, Limited
发明人： Takahisa TANIGUCHI , Chih-Chien LIN , Tatsuo MIYAZAKI
IPC分类号： H01L21/3213 , C23F1/44 , H01L21/311
CPC分类号： H01L21/32134 , C23F1/44 , H01L21/31111
摘要： A wet etching solution according to the present disclosure is an etching solution for selectively removing a second metal layer made of at least one of a cobalt-based material or a copper-based material from a semiconductor substrate while suppressing etching of a first metal layer made of a tungsten-based material, the first metal layer and the second metal layer being co-present on the semiconductor substrate, an oxide layer being formed on a surface layer of at least the at least one of a cobalt-based material or a copper-based material. The wet etching solution includes a solution in which a β-diketone containing a trifluoromethyl group and a carbonyl group bonded together is dissolved in an organic solvent.

6. 发明申请

US20210287915A1 ETCHING METHOD AND ETCHING DEVICE 有权
公开(公告)号：US20210287915A1
公开(公告)日：2021-09-16
申请号：US16316128
申请日：2017-05-31
申请人： CENTRAL GLASS COMPANY, LIMITED , TOKYO ELECTRON LIMITED
发明人： Akifumi YAO , Kunihiro YAMAUCHI , Tatsuo MIYAZAKI , Jun LIN , Susumu YAMAUCHI , Kazuaki NISHIMURA
IPC分类号： H01L21/3213 , H01L21/67
摘要： The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

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