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1. 发明授权

US06340610B1 Thin-film transistor and method of making same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06340610B1
公开(公告)日：2002-01-22
申请号：US09243556
申请日：1999-02-02
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L2100
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by about 1 to 4 &mgr;m. A method of making such a thin film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layer directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.
摘要翻译：薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽约1至4微米。制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

2. 发明授权

US07176489B2 Thin-film transistor and method of making same 无效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07176489B2
公开(公告)日：2007-02-13
申请号：US10872527
申请日：2004-06-22
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.
摘要翻译：薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

3. 发明授权

US5905274A Thin-film transistor and method of making same 无效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US5905274A
公开(公告)日：1999-05-18
申请号：US918119
申请日：1997-08-27
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L21/28 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/04 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by about 1 to 4 .mu.m. A method of making such a thin film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layer directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.
摘要翻译：薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽约1至4μm。制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

4. 发明授权

US06815321B2 Thin-film transistor and method of making same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815321B2
公开(公告)日：2004-11-09
申请号：US10377732
申请日：2003-03-04
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L213205
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &mgr;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

5. 发明授权

US06548829B2 Thin-film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06548829B2
公开(公告)日：2003-04-15
申请号：US10154955
申请日：2002-05-28
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L2904
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &mgr;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.
摘要翻译：薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

6. 发明授权

US08021937B2 Array substrate including thin film transistor and method of fabricating the same 有权
标题翻译：阵列基板包括薄膜晶体管及其制造方法
公开(公告)号：US08021937B2
公开(公告)日：2011-09-20
申请号：US12486453
申请日：2009-06-17
申请人： Hyung-Gu Roh , Byung-Chul Ahn , Hee-Dong Choi , Seong-Moh Seo , Jun-Min Lee
发明人： Hyung-Gu Roh , Byung-Chul Ahn , Hee-Dong Choi , Seong-Moh Seo , Jun-Min Lee
IPC分类号： H01L21/336
CPC分类号： H01L27/1285 , H01L21/268 , H01L27/1288
摘要： A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole.
摘要翻译：制造阵列基板的方法包括：形成栅极线和连接到栅极线的栅电极; 在栅极线和栅极绝缘层上形成栅极绝缘层; 在栅电极上的栅极绝缘层上依次形成本征非晶硅图案和杂质掺杂非晶硅图案; 在栅极绝缘层上形成数据线，在掺杂杂质的非晶硅图案上的源电极和漏极之间形成数据线，该数据线与栅极线交叉以限定一个像素区域，以及源极和漏极彼此间隔开; 去除通过源极和漏极暴露的杂质掺杂非晶硅图案的一部分，以限定欧姆接触层; 通过源极和漏极将第一激光束照射到本征非晶硅图案上，以在第一部分的两侧形成包括多晶硅的第一部分和非晶硅的第二部分的有源层; 在数据线上形成钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及在所述像素区域中的钝化层上形成像素电极，所述像素电极通过所述漏极接触孔与所述漏电极连接。

7. 发明授权

US07910414B2 Method of fabricating array substrate 有权
标题翻译：阵列基板的制作方法
公开(公告)号：US07910414B2
公开(公告)日：2011-03-22
申请号：US12591501
申请日：2009-11-20
申请人： Hee-Dong Choi , Sang-Gul Lee , Seong-Moh Seo , Jun-Min Lee , Byung-Chul Ahn
发明人： Hee-Dong Choi , Sang-Gul Lee , Seong-Moh Seo , Jun-Min Lee , Byung-Chul Ahn
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1274 , H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.
摘要翻译：制造阵列基板的方法包括在基板上依次形成第一金属层，第一无机绝缘层和本征非晶硅层，所述第一金属层包括第一金属材料层和第二金属材料层; 结晶本征非晶硅; 形成栅电极，栅极线，栅绝缘层和有源层; 形成包括分别暴露有源层的两侧的第一和第二接触孔的层间绝缘层; 形成分别接触有源层的两侧的第一和第二欧姆接触图案，源电极，漏电极和连接源电极的数据线; 在源极上形成钝化层，漏电极; 以及在所述钝化层上形成像素电极并与所述漏电极接触。

8. 发明申请

US20110032277A1 MONOCHROME LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：单色发光显示装置及其制造方法
公开(公告)号：US20110032277A1
公开(公告)日：2011-02-10
申请号：US12646256
申请日：2009-12-23
申请人： Se-Hee LEE , Byung-Chul Ahn , Seung-Kyu Choi , Nam-Yang Lee , Seok-Jong Lee
发明人： Se-Hee LEE , Byung-Chul Ahn , Seung-Kyu Choi , Nam-Yang Lee , Seok-Jong Lee
IPC分类号： G06F3/038 , G09G5/10 , H01J9/00
CPC分类号： H01L51/5281 , G09G3/3225 , G09G2300/0452 , G09G2320/0242 , H01L27/3244 , H01L2251/558
摘要： A monochrome light emitting display device and a method for fabricating the same are disclosed, in which a pixel structure of a monochrome light emitting display device is changed to improve a contrast ratio and resolution and at the same time color shift is prevented from occurring, so as to display clearer image. The monochrome light emitting display device comprises a display panel having unit pixels of first and second sub-pixels arranged in a matrix arrangement to display a monochrome image; gate and data drivers respectively driving gate lines and data lines of the display panel; and a timing controller aligning externally input RGB data to be suitable for driving of the display panel to supply the RGB data to the data driver and generating data and gate control signals to control the data and gate drivers.
摘要翻译：公开了一种单色发光显示装置及其制造方法，其中改变单色发光显示装置的像素结构以提高对比度和分辨率，并且同时防止发生色偏。以显示更清晰的图像。单色发光显示装置包括：显示面板，具有排列成矩阵排列的第一和第二子像素的单位像素，以显示单色图像; 门和数据驱动器分别驱动显示面板的门线和数据线; 以及定时控制器，用于对准外部输入RGB数据以适于驱动显示面板，以将RGB数据提供给数据驱动器，并产生数据和门控制信号以控制数据和门驱动器。

9. 发明申请

US20090023254A1 METHOD OF FORMING INORGANIC INSULATING LAYER AND METHOD OF FABRICATING ARRAY SUBSTRATE FOR DISPLAY DEVICE USING THE SAME 有权
标题翻译：形成无机绝缘层的方法以及使用其制造用于显示装置的阵列基板的方法
公开(公告)号：US20090023254A1
公开(公告)日：2009-01-22
申请号：US11967660
申请日：2007-12-31
申请人： Joo-Soo Lim , Hong-Sik Kim , Hee-Young Kwack , Hyun-Seok Hong , Byung-Chul Ahn , Byoung-Ho Lim
发明人： Joo-Soo Lim , Hong-Sik Kim , Hee-Young Kwack , Hyun-Seok Hong , Byung-Chul Ahn , Byoung-Ho Lim
IPC分类号： H01L21/336 , H01L21/469
CPC分类号： C23C14/0652
摘要： A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.
摘要翻译：在衬底上形成无机绝缘层的方法包括在衬底和靶之间提供混合气体，以及在衬底和靶之间产生等离子体。目标包括硅基材料。所述方法还包括在所述衬底上沉积来自所述等离子体的多个离子。

10. 发明授权

US06919932B2 Liquid crystal display having uniform interval between pixel electrodes 有权
标题翻译：在像素电极之间具有均匀间隔的液晶显示器
公开(公告)号：US06919932B2
公开(公告)日：2005-07-19
申请号：US10885781
申请日：2004-07-08
申请人： Byung-Chul Ahn , Hyun-Kyu Lee
发明人： Byung-Chul Ahn , Hyun-Kyu Lee
IPC分类号： G02F1/133 , G02F1/1343 , G02F1/1362 , G02F1/136
CPC分类号： G02F1/1362 , G02F1/134336 , G02F1/13439 , G02F1/136286
摘要： A liquid crystal display, and a fabricating method thereof, wherein pixel electrodes are highly accurately located relative to opaque elements, such as gate lines, data lines, or auxilarly lines, beneficially by using opaque elements as masking elements when exposing a photosensitive layer through a substrate. The angle of the irradiating light through the substrate can be changed to achieve a desired relative location. A pixel electrode can be located within 1 μm of a data line. Image stain defects can be reduced.
摘要翻译：一种液晶显示器及其制造方法，其中像素电极相对于不透明元件（例如栅极线，数据线或辅助线）高度精确地定位，有利地通过使用不透明元件作为掩模元件，当将感光层暴露于基质。可以改变通过基板的照射光的角度以实现所需的相对位置。像素电极可以位于数据线的1um之内。可以减少图像污染缺陷。

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