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1. 发明授权

US06337494B1 Super self-aligned bipolar transistor and method for fabricating thereof 失效
标题翻译：超自对准双极晶体管及其制造方法
公开(公告)号：US06337494B1
公开(公告)日：2002-01-08
申请号：US09137709
申请日：1998-08-21
申请人： Byung Ryul Ryum , Deok Ho Cho , Tae Hyeon Han , Soo Min Lee
发明人： Byung Ryul Ryum , Deok Ho Cho , Tae Hyeon Han , Soo Min Lee
IPC分类号： H01L310328
CPC分类号： H01L29/1602 , H01L29/16 , H01L29/66242 , H01L29/66287 , H01L29/732 , H01L29/7378
摘要： Disclosed is a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof without using a trench isolation process and a sophisticated selective epitaxial growth (SEG) processes. According to this invention, the sophisticated isolation and the SEG techniques are derived by using simple and popular processes. The base layer has multi-layer structure being made of a Si, an undoped SiGe, a SiGe doped a p-type impurity in-situ and Si. Also, the selective epitaxial growth is not required. Thus, it can be less prone to a flow of leakage current or an emitter-base-collector short effect.
摘要翻译：公开了能够使元件小型化的超自对准异质结双极晶体管，简化了其工艺步骤，而不使用沟槽隔离工艺和复杂的选择性外延生长（SEG）工艺。根据本发明，通过使用简单和流行的方法得到复杂的隔离和SEG技术。基层具有由Si，未掺杂的SiGe，SiGe原位掺杂p型杂质的Si和Si构成的多层结构。此外，不需要选择性外延生长。因此，可能不太容易发生漏电流或发射极 - 基极 - 集电极短路效应。

2. 发明授权

US06362066B1 Method for manufacturing bipolar devices 失效
标题翻译：制造双极器件的方法
公开(公告)号：US06362066B1
公开(公告)日：2002-03-26
申请号：US09469395
申请日：1999-12-22
申请人： Byung Ryul Ryum , Tae Hyeon Han , Soo Min Lee , Deok Ho Cho
发明人： Byung Ryul Ryum , Tae Hyeon Han , Soo Min Lee , Deok Ho Cho
IPC分类号： H01L21331
CPC分类号： H01L29/66287 , H01L29/66242
摘要： The present invention is related to a bipolar transistor in which the in-situ doped epitaxial Si or SiGe base layer is used instead of using an ion-implanted Si base, in order to achieve higher cutoff frequency. The SiGe base having the narrower energy bandgap than the Si emitter allows to enhance the current gain, the cutoff frequency (fT), and the maximum oscillation frequency (fmax). The narrow bandgap SiGe base also allows to have higher base doping concentration. As a result, the intrinsic base resistance is lowered and the noise figure is thus lowered. Parasitic base resistance is also minimized by using a metallic silicide base ohmic electrode. The present invention is focused on low cost, high repeatability and reliability by simplifying the manufacturing process step.
摘要翻译：本发明涉及一种双极晶体管，其中使用原位掺杂的外延Si或SiGe基层代替使用离子注入的Si基，以便实现更高的截止频率。具有比Si发射器更窄的能带隙的SiGe基极允许增强电流增益，截止频率（fT）和最大振荡频率（fmax）。窄带隙SiGe基极还允许具有较高的基极掺杂浓度。结果，本征基极电阻降低，噪声系数降低。通过使用金属硅化物基极欧姆电极也使寄生基极电阻最小化。通过简化制造工艺步骤，本发明集中在低成本，高重复性和可靠性上。

3. 发明授权

US5897359A Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor 失效
标题翻译：制造硅/硅锗异质结双极晶体管的方法
公开(公告)号：US5897359A
公开(公告)日：1999-04-27
申请号：US987474
申请日：1997-12-09
申请人： Deok Ho Cho , Soo Min Lee , Tae Hyeon Han , Byung Ryul Ryum , Kwang Eui Pyun
发明人： Deok Ho Cho , Soo Min Lee , Tae Hyeon Han , Byung Ryul Ryum , Kwang Eui Pyun
IPC分类号： H01L29/74 , H01L21/331 , H01L29/737 , H01L21/8222
CPC分类号： H01L29/66242 , H01L29/7378
摘要： There is disclosed a method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor having a good conformity and an improved speed characteristic, which includes the steps of sequentially laminating an underlying nitride film, an oxide film, a polycrystalline silicon film and an upper nitride on a semiconductor substrate on which devices are separated and a collector is formed; sequentially etching said upper nitride film and said polycrystalline silicon film using the emitter as a mask, and then forming a side wall nitride film; selectively wet-etching said oxide film to form a side base linker opening; burying said base linker opening with a polycrystalline silicon; oxidizing said polycrystalline silicon film buried into said base linker opening and then removing said oxide film by means of the selective wet-etch process; removing said upper nitride and then forming a silicon/silicon germanium film as a base film on the exposed thereof; and forming an emitter said silicon/silicon germanium film.
摘要翻译：公开了一种制造具有良好一致性和改进的速度特性的硅/硅锗异质结双极晶体管的方法，其包括以下步骤：将下面的氮化物膜，氧化物膜，多晶硅膜和上部氮化物依次层压在半导体衬底，器件分离并形成集电极; 使用发射极作为掩模，依次蚀刻所述上部氮化物膜和所述多晶硅膜，然后形成侧壁氮化物膜; 选择性地湿蚀刻所述氧化膜以形成侧基连接器开口; 用多晶硅掩埋所述基底连接器开口; 氧化所述多晶硅膜，所述多晶硅膜埋入所述基底连接器开口中，然后通过选择性湿蚀刻工艺除去所述氧化物膜; 去除所述上部氮化物，然后在其暴露时形成硅/硅锗膜作为基膜; 以及形成所述硅/硅锗膜的发射极。

4. 发明授权

US06462397B2 Bipolar junction device 失效
标题翻译：双极连接器
公开(公告)号：US06462397B2
公开(公告)日：2002-10-08
申请号：US10027583
申请日：2001-10-22
申请人： Byung Ryul Ryum , Tae Hyeon Han , Soo Min Lee , Deok Ho Cho
发明人： Byung Ryul Ryum , Tae Hyeon Han , Soo Min Lee , Deok Ho Cho
IPC分类号： H01L27082
CPC分类号： H01L29/66287 , H01L29/66242
摘要： The present invention is related to a bipolar transistor in which the in-situ doped epitaxial Si or SiGe base layer is used instead of using an ion-implanted Si base, in order to achieve higher cutoff frequency. The SiGe base having the narrower energy bandgap than the Si emitter allows to enhance the current gain, the cutoff frequency(fT), and the maximum oscillation frequency (fmax). The narrow bandgap SiGe base also allows to have higher base doping concentration. As a result, the intrinsic base resistance is lowered and the noise figure is thus lowered. Parasitic base resistance is also minimized by using a metallic silicide base ohmic electrode. The present invention is focused on low cost, high repeatability and reliability by simplifying the manufacturing process step.
摘要翻译：本发明涉及一种双极晶体管，其中使用原位掺杂的外延Si或SiGe基层代替使用离子注入的Si基，以便实现更高的截止频率。具有比Si发射器更窄的能带隙的SiGe基极允许增强电流增益，截止频率（fT）和最大振荡频率（fmax）。窄带隙SiGe基极还允许具有较高的基极掺杂浓度。结果，本征基极电阻降低，噪声系数降低。通过使用金属硅化物基极欧姆电极也使寄生基极电阻最小化。通过简化制造工艺步骤，本发明集中在低成本，高重复性和可靠性上。

5. 发明授权

US08026156B2 Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device 有权
标题翻译：氮化物系化合物层的制造方法，氮化镓衬底和垂直结构氮化物系半导体发光元件的制造方法
公开(公告)号：US08026156B2
公开(公告)日：2011-09-27
申请号：US12489819
申请日：2009-06-23
申请人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
发明人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

6. 发明授权

US07859086B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US07859086B2
公开(公告)日：2010-12-28
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , H01L29/04 , H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

7. 发明申请

US20070215983A1 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US20070215983A1
公开(公告)日：2007-09-20
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

8. 发明授权

US07067401B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

9. 发明授权

US09034850B2 Gonadotropin releasing hormone receptor antagonist, preparation method thereof and pharmaceutical composition comprising the same 有权
标题翻译：促性腺激素释放激素受体拮抗剂，其制备方法和包含其的药物组合物
公开(公告)号：US09034850B2
公开(公告)日：2015-05-19
申请号：US13511065
申请日：2010-11-19
申请人： Seon Mi Kim , Min Hee Lee , Jae Sun Kim , Hoe Chul Jung , So Young Lee , Soo Min Lee , Eun Jeong Kim , Eui Sun Park , Sung Hoon Park , Bong Yong Lee , Key An Um
发明人： Seon Mi Kim , Min Hee Lee , Jae Sun Kim , Hoe Chul Jung , So Young Lee , Soo Min Lee , Eun Jeong Kim , Eui Sun Park , Sung Hoon Park , Bong Yong Lee , Key An Um
IPC分类号： A01N57/00 , C07D239/545 , A61K31/506 , C07D239/46 , C07D401/04 , C07D403/04 , C07D405/14 , C07D213/74 , C07D253/075 , C07D401/12 , C07D401/14 , C07D403/06 , C07D403/12 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/04 , C07D491/048 , C07F9/6558
CPC分类号： C07D239/545 , A61K31/506 , C07D213/74 , C07D239/46 , C07D253/075 , C07D401/04 , C07D401/12 , C07D401/14 , C07D403/04 , C07D403/06 , C07D403/12 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/04 , C07D491/048 , C07F9/65583 , C07F9/65586
摘要： Disclosed are compounds useful as gonadotrophin-releasing hormone (“GnRH”) receptor antagonist.
摘要翻译：公开了可用作促性腺激素释放激素（“GnRH”）受体拮抗剂的化合物。

10. 发明申请

US20100190968A1 OLEANANE TRITERPENE SAPONIN COMPOUNDS WHICH ARE EFFECTIVE ON TREATMENT OF DEMENTIA AND MILD COGNITIVE IMPAIRMENT (MCI) AND IMPROVEMENT OF COGNITIVE FUNCTION 审中-公开
标题翻译： OLEANANE TRITERPENE SAPONIN化合物，其有效治疗DEMENTIA和MILD认知障碍（MCI）和改善认知功能
公开(公告)号：US20100190968A1
公开(公告)日：2010-07-29
申请号：US12446523
申请日：2006-10-24
申请人： Bong Cheol Kim , Wonrack Choi , Soo Min Lee , Se Jun Yun , Chang-Kyun Han , Guang-Jin Im , Wie-Jong Kwak
发明人： Bong Cheol Kim , Wonrack Choi , Soo Min Lee , Se Jun Yun , Chang-Kyun Han , Guang-Jin Im , Wie-Jong Kwak
IPC分类号： C07H15/256
CPC分类号： A61K31/015
摘要： The present invention relates to the use of oleanane-type triterpene saponin compounds, which are effective for improving memory and learning ability, as an effective ingredient of drugs for the treatment and prevention of dementia and mild cognitive impairment and health foods for the improvement of brain functions including cognitive function.
摘要翻译：本发明涉及作为治疗和预防痴呆和轻度认知障碍的药物的有效成分和用于改善脑的健康食品的有利于提高记忆力和学习能力的油酸型三萜皂苷化合物的用途功能包括认知功能。

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