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1. 发明授权

US06472273B2 Method of manufacturing a flash memory device 失效
标题翻译：制造闪存装置的方法
公开(公告)号：US06472273B2
公开(公告)日：2002-10-29
申请号：US09875734
申请日：2001-06-06
申请人： Byung Hee Cho , Noh Yeal Kwak
发明人： Byung Hee Cho , Noh Yeal Kwak
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L29/66825
摘要： A method of manufacturing a flash memory device includes the steps of sequentially forming a tunnel oxide film and a first polysilicon layer on a semiconductor substrate in which a device separation film is formed and then patterning the tunnel oxide film and the first polysilicon layer to form a floating gate; forming a mask so that a portion in which a source region will be formed can be exposed and then removing the device separation film at the exposed portion; forming a dielectric film including a lower oxide film, a nitride film, and an upper oxide film on the entire structure; performing an annealing process; then forming a second polysilicon layer on the dielectric film; sequentially removing the polysilicon layer, the upper oxide film, and the nitride film in a portion in which a source region and a drain region will be formed, and injecting impurity ions into the semiconductor substrate at a portion in which the lower oxide film remains to form a source region and a drain region; after removing the remaining lower oxide film, sequentially forming a third polysilicon layer and a tungsten silicide layer on the entire structure and then patterning the third polysilicon layer and the tungsten silicide layer to form a control gate; and performing an annealing process for activating the impurity ions injected into the source region and the drain region.
摘要翻译：制造闪速存储器件的方法包括以下步骤：在其上形成器件分离膜的半导体衬底上依次形成隧道氧化物膜和第一多晶硅层，然后对隧道氧化物膜和第一多晶硅层进行构图，浮门形成掩模，使得其中将形成源极区的部分可以暴露，然后在暴露部分移除器件分离膜; 在整个结构上形成包括低氧化物膜，氮化物膜和上氧化膜的电介质膜; 进行退火处理; 然后在介电膜上形成第二多晶硅层; 在其中将形成源极区和漏极区的部分中顺序地去除多晶硅层，上氧化物膜和氮化物膜，并且在低氧化膜保留的部分将杂质离子注入到半导体衬底中形成源极区域和漏极区域; 在除去剩余的低氧化物膜之后，在整个结构上依次形成第三多晶硅层和硅化钨层，然后构图第三多晶硅层和硅化钨层以形成控制栅极; 并且执行用于激活注入到源极区域和漏极区域中的杂质离子的退火处理。

2. 发明授权

US06444522B1 Method of manufacturing a flash memory device with an antidiffusion region between well regions 失效
标题翻译：制造在井区之间具有防扩散区域的闪存装置的方法
公开(公告)号：US06444522B1
公开(公告)日：2002-09-03
申请号：US09716416
申请日：2000-11-21
申请人： Byung Hee Cho , Noh Yeal Kwak
发明人： Byung Hee Cho , Noh Yeal Kwak
IPC分类号： H01L218247
CPC分类号： H01L27/11521 , H01L27/115
摘要： There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that a break down voltage between wells is reduced and an insulating characteristic between the wells is lowered due to degraded barrier characteristic between the wells, in a flash memory device employing a triple well structure, the present invention forms an anti-diffusion region for preventing diffusion of dopants between a P-well region and a N-well region by nitrogen ion implantation, thus improving the electrical characteristic of the device.
摘要翻译：公开了一种制造闪速存储器件的方法。为了解决在采用三重阱结构的闪速存储器件中，井之间的分解电压降低并且阱之间的绝缘特性由于阱之间的屏障特性劣化而降低的问题，本发明形成了一种抗扩散区域，用于通过氮离子注入防止掺杂剂在P阱区域和N阱区域之间的扩散，从而提高器件的电特性。

3. 发明授权

US06391717B1 Method of manufacturing a flash memory device 失效
标题翻译：制造闪存装置的方法
公开(公告)号：US06391717B1
公开(公告)日：2002-05-21
申请号：US09721933
申请日：2000-11-27
申请人： Sung Hun Shin , Byung Hee Cho , Ki Jun Kim
发明人： Sung Hun Shin , Byung Hee Cho , Ki Jun Kim
IPC分类号： H01L21336
CPC分类号： H01L21/28273 , H01L29/42324
摘要： There is disclosed a method of manufacturing a flash memory device. In order to solve the problem that the coupling ratio of a gate electrode is low in a stack gate-type flash memory device, the present invention allows a control gate to surround a control gate from its to its bottom. Therefore, the present invention can increase the contact area of the floating gate and the control gate and can also increase the coupling ratio of the gate electrode.
摘要翻译：公开了一种制造闪速存储器件的方法。为了解决堆叠栅型闪存器件中栅电极的耦合比低的问题，本发明允许控制栅极从其底部围绕控制栅极。因此，本发明可以增加浮动栅极和控制栅极的接触面积，并且还可以增加栅电极的耦合比。

4. 发明授权

US08657511B2 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US08657511B2
公开(公告)日：2014-02-25
申请号：US12647227
申请日：2009-12-24
申请人： Tae Han Kim , Byung Hee Cho
发明人： Tae Han Kim , Byung Hee Cho
IPC分类号： B41J13/10 , B65H1/04
CPC分类号： B41J13/103 , B65H1/12 , B65H1/266 , B65H2405/1117 , B65H2511/10 , B65H2511/152 , B65H2511/212 , B65H2220/01 , B65H2220/02 , B65H2220/04
摘要： Disclosed is an image forming apparatus and printing media cassette thereof. The loading position of a loading plate of the printing media cassette can be varied based on the printing medium size by a capacity adjustment unit. The capacity adjustment unit may operate in association with the size adjustment guide so as to define the loading position based on the size of the printing media. The image forming apparatus can include the printing media cassette detachably received in the body thereof.
摘要翻译：公开了一种图像形成装置及其打印介质盒。打印介质盒的装载板的装载位置可以通过容量调节单元基于打印介质尺寸而改变。容量调整单元可以与尺寸调整引导件相关联地操作，以便基于打印介质的尺寸限定装载位置。图像形成装置可以包括可拆卸地容纳在其主体中的打印介质盒。

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