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1. 发明授权

US08497565B2 Multiple electrode layer backend stacked capacitor 有权
标题翻译：多电极层后端层叠电容器
公开(公告)号：US08497565B2
公开(公告)日：2013-07-30
申请号：US13043066
申请日：2011-03-08
申请人： Byron Lovell Willaims , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
发明人： Byron Lovell Willaims , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
IPC分类号： H01L21/02
CPC分类号： H01L28/91
摘要： In a disclosed embodiment, a stacked capacitor (100) has bottom, middle and top metal electrode layers (141A, 141B, 141C) interleaved with dielectric layers (142A, 142B) conformally disposed within holes (140A, 140B, 140C) in a protective overcoat or backend dielectric layer (110) over a top metal layer (115) of an integrated circuit (105). A top electrode (155) contacts the top metal electrode layer (141C). A bottom electrode (150) electrically couples an isolated part of the top metal electrode layer (141C) through a bottom electrode via (165A) to a first contact node (135A) in the top metal layer (115) which is in contact with the bottom metal electrode layer (141A). A middle electrode (160) electrically couples a part of the middle metal electrode layer (141B) not covered by the top metal layer (115) through a middle electrode via (165B) to a second contact node (135B) in the top metal electrode layer (115). The sidewalls of the top and middle electrode vias (165A, 165B) are lined with insulating material to electrically isolate the metal electrode layer ends.
摘要翻译：在公开的实施例中，叠层电容器（100）具有与保护性地设置在保护孔（140A，140B，140C）内的电介质层（142A，142B）交错的底部，中间和顶部金属电极层（141A，141B，141C）外部涂层或后端电介质层（110）覆盖在集成电路（105）的顶部金属层（115）上。顶部电极（155）接触顶部金属电极层（141C）。底部电极（150）通过（165A）将顶部金属电极层（141C）的隔离部分电耦合到顶部金属层（115）中与第一接触节点（135A）接触的第一接触节点（135A）底部金属电极层（141A）。中间电极（160）将未被顶部金属层（115）覆盖的中间金属电极层（141B）的一部分通过中间电极（165B）电耦合到顶部金属电极中的第二接触节点（135B）层（115）。顶部和中间电极通孔（165A，165B）的侧壁衬有绝缘材料以电绝缘金属电极层端部。

2. 发明申请

US20110156209A1 MULTIPLE ELECTRODE LAYER BACKEND STACKED CAPACITOR 有权
标题翻译：多层电极层背板堆叠电容
公开(公告)号：US20110156209A1
公开(公告)日：2011-06-30
申请号：US13043066
申请日：2011-03-08
申请人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
发明人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
IPC分类号： H01L29/92
CPC分类号： H01L28/91
摘要： In a disclosed embodiment, a stacked capacitor (100) has bottom, middle and top metal electrode layers (141A, 141B, 141C) interleaved with dielectric layers (142A, 142B) conformally disposed within holes (140A, 140B, 140C) in a protective overcoat or backend dielectric layer (110) over a top metal layer (115) of an integrated circuit (105). A top electrode (155) contacts the top metal electrode layer (141C). A bottom electrode (150) electrically couples an isolated part of the top metal electrode layer (141C) through a bottom electrode via (165A) to a first contact node (135A) in the top metal layer (115) which is in contact with the bottom metal electrode layer (141A). A middle electrode (160) electrically couples a part of the middle metal electrode layer (141B) not covered by the top metal layer (115) through a middle electrode via (165B) to a second contact node (135B) in the top metal electrode layer (115). The sidewalls of the top and middle electrode vias (165A, 165B) are lined with insulating material to electrically isolate the metal electrode layer ends.
摘要翻译：在公开的实施例中，叠层电容器（100）具有与保护性地设置在保护孔（140A，140B，140C）内的电介质层（142A，142B）交错的底部，中间和顶部金属电极层（141A，141B，141C）外部涂层或后端电介质层（110）覆盖在集成电路（105）的顶部金属层（115）上。顶部电极（155）接触顶部金属电极层（141C）。底部电极（150）通过（165A）将顶部金属电极层（141C）的隔离部分电耦合到顶部金属层（115）中与第一接触节点（135A）接触的第一接触节点（135A）底部金属电极层（141A）。中间电极（160）将未被顶部金属层（115）覆盖的中间金属电极层（141B）的一部分通过中间电极（165B）电耦合到顶部金属电极中的第二接触节点（135B）层（115）。顶部和中间电极通孔（165A，165B）的侧壁衬有绝缘材料以电绝缘金属电极层端部。

3. 发明申请

US20090200637A1 METHODS AND DEVICES FOR A HIGH-K STACKED CAPACITOR 有权
标题翻译：用于高K堆叠电容器的方法和装置
公开(公告)号：US20090200637A1
公开(公告)日：2009-08-13
申请号：US12029798
申请日：2008-02-12
申请人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
发明人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/91
摘要： An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrically tied to an associated electrode. The method also includes alternately depositing multiple layers of dielectric between the multiple layers of metal and coupling a bottom layer of the multiple layers of metal to a contact node in a top metal layer of the integrated circuit.
摘要翻译：实施例通常涉及形成电容器的方法。该方法包括在集成电路的保护外涂层或后端电介质层内形成多个孔，并沉积多层金属，每层金属电连接到相关电极。该方法还包括交替地在多层金属之间沉积多层电介质，并将多层金属的底层耦合到集成电路的顶层金属层中的接触节点。

4. 发明授权

US07902033B2 Methods and devices for a high-k stacked capacitor 有权
标题翻译：高k堆叠电容器的方法和装置
公开(公告)号：US07902033B2
公开(公告)日：2011-03-08
申请号：US12029798
申请日：2008-02-12
申请人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
发明人： Byron Lovell Williams , Maxwell Walthour Lippitt, III , Betty Mercer , Scott Montgomery , Binghua Hu
IPC分类号： H01L21/20
CPC分类号： H01L28/91
摘要： An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrically tied to an associated electrode. The method also includes alternately depositing multiple layers of dielectric between the multiple layers of metal and coupling a bottom layer of the multiple layers of metal to a contact node in a top metal layer of the integrated circuit.
摘要翻译：实施例通常涉及形成电容器的方法。该方法包括在集成电路的保护外涂层或后端电介质层内形成多个孔，并沉积多层金属，每层金属电连接到相关电极。该方法还包括交替地在多层金属之间沉积多层电介质，并将多层金属的底层耦合到集成电路的顶层金属层中的接触节点。

5. 发明申请

US20070075348A1 High density, high Q capacitor on top of a protective layer 审中-公开
标题翻译：高密度，高Q电容器在保护层顶部
公开(公告)号：US20070075348A1
公开(公告)日：2007-04-05
申请号：US11239244
申请日：2005-09-30
申请人： Byron Williams , Maxwell Lippitt , Darius Crenshaw , Laurinda Ng , Betty Mercer , Scott Montgomery , C. Thompson
发明人： Byron Williams , Maxwell Lippitt , Darius Crenshaw , Laurinda Ng , Betty Mercer , Scott Montgomery , C. Thompson
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L27/0805 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In accordance with the invention, there are methods for making and there is an integrated circuit comprising a semiconductor substrate comprising device elements and a metallization layer interconnecting the device elements and having an uppermost layer. The integrated circuit can also include a protective overcoat formed over the metallization layer, the protective overcoat having a plurality of patterned regions that expose portions of the metallization layer, a first conductive layer formed on the protective overcoat, and a dielectric layer formed over the first conductive layer. The integrated circuit can further include a second conductive layer formed over the dielectric layer and a plurality of sidewall spacers contacting end portions of the first conductive layer.
摘要翻译：根据本发明，存在制造方法，并且存在包括半导体衬底的集成电路，该半导体衬底包括器件元件和互连器件元件并具有最上层的金属化层。集成电路还可以包括形成在金属化层上的保护外涂层，保护外涂层具有暴露金属化层的部分的多个图案化区域，形成在保护外涂层上的第一导电层，以及形成在第一导电层。集成电路还可以包括形成在电介质层上的第二导电层和与第一导电层的端部接触的多个侧壁间隔件。

6. 发明申请

US20060199328A1 Non-dispersive high density polysilicon capacitor utilizing amorphous silicon electrodes 审中-公开
标题翻译：非分散高密度多晶硅电容器利用非晶硅电极
公开(公告)号：US20060199328A1
公开(公告)日：2006-09-07
申请号：US11072186
申请日：2005-03-04
申请人： Maxwell Lippitt , Byron Williams , Michael DuBois , Betty Mercer , Scott Montgomery , C. Matthew Thompson , Evelyn Lafferty
发明人： Maxwell Lippitt , Byron Williams , Michael DuBois , Betty Mercer , Scott Montgomery , C. Matthew Thompson , Evelyn Lafferty
IPC分类号： H01L21/8232
CPC分类号： H01L27/0629 , H01L28/60
摘要： The present invention provides, in one aspect, a method of fabricating a capacitor 615, comprising forming a first electrode 610, placing a dielectric 515 over the first electrode, and locating a second electrode 510 over the dielectric wherein at least one of the first or second electrodes 610, 510 is doped amorphous silicon.
摘要翻译：本发明在一个方面提供一种制造电容器615的方法，包括形成第一电极610，将电介质515放置在第一电极上方，并将第二电极510定位在电介质上，其中第一或第第二电极610,510是掺杂的非晶硅。

7. 发明授权

US5248632A Method of forming an antifuse 失效
标题翻译：形成反熔丝的方法
公开(公告)号：US5248632A
公开(公告)日：1993-09-28
申请号：US953641
申请日：1992-09-29
申请人： Yingsheng Tung , Scott Montgomery
发明人： Yingsheng Tung , Scott Montgomery
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L2924/0002 , Y10S148/055
摘要： An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).
摘要翻译：通过形成覆盖在第一金属层（28）的一部分上的钛钨层（34）形成反熔丝（42）。钛钨层（34）被氧化以在其表面上形成氧化物膜（36）。绝缘区域（30）形成在钛钨层（34）附近并覆盖第一金属层（28）。覆盖钛钨层（34）上的第二金属层（40）形成。在第一和第二金属层（28），（40）上施加击穿电压将会分解氧化膜（36），从而导致第一和第二金属层（28），（40）之间的连接。

8. 发明授权

US08463716B2 Auditable and secure systems and methods for issuing refunds for misprints of mail pieces 有权
公开(公告)号：US08463716B2
公开(公告)日：2013-06-11
申请号：US09990625
申请日：2001-11-20
申请人： Scott Montgomery , Harry T. Whitehouse
发明人： Scott Montgomery , Harry T. Whitehouse
IPC分类号： G06Q99/00
CPC分类号： G07B17/00024 , G07B2017/0004
摘要： A method and system for using a tracking ID to facilitate the refunding of unused postage is provided. Information for a postage transaction, along with the tracking ID and an associated delivery status, is stored. This delivery status is updated when the mail piece carrying the tracking ID is delivered. Unused postage can be confirmed by retrieving the stored postage transaction information and determining from that whether there are duplicative postage transactions. The delivery statuses for the duplicative postage transactions can then be reviewed to determine whether the mail pieces associated with these postage transactions have been delivered. If not, one of the postage transactions may be refunded.

9. 发明授权

US07831518B2 Systems and methods for detecting postage fraud using an indexed lookup procedure 有权
标题翻译：使用索引查找程序检测邮资欺诈的系统和方法
公开(公告)号：US07831518B2
公开(公告)日：2010-11-09
申请号：US09990341
申请日：2001-11-20
申请人： Scott Montgomery , Harry T. Whitehouse
发明人： Scott Montgomery , Harry T. Whitehouse
IPC分类号： G06F17/00 , G07B17/02
CPC分类号： G07B17/00508 , G07B2017/00612 , G07B2017/0062
摘要： A method and system for using an indexing identifier (such as, e.g., a tracking ID or the combination of a postage vendor ID, user account, and piece count) to decrease the size of the postage indicium transmitted to an end user computer, or eliminate transmission of the postage indicium altogether, is provided. When the postage indicium for the end user computer is generated, it is stored, and the indexing identifier, rather than the postage indicium, is transmitted to the end user computer. The indexing identifier is applied to a mail piece, which is then scanned by the postal authority. The postal authority can obtain the stored postage indicium by reference to the indexing identifier. In this manner, the postal authority has access to the postage indicium without having to apply it to the mail piece. The indexing identifiers can optionally be used to index sender identification information for verifying that the sender of a mail piece is a trusted individual or entity.
摘要翻译：一种用于使用索引标识符（例如，跟踪ID或邮资供应商ID，用户帐户和件数的组合）来减少发送给最终用户计算机的邮资标记的大小的方法和系统，或完全消除了邮戳的传输。当生成用于最终用户计算机的邮资标签时，将其存储起来，将索引标识符而不是邮资标签发送到最终用户计算机。索引标识符被应用于邮件，然后由邮政机构进行扫描。邮政机关可以通过参考索引标识符获取存储的邮资标签。以这种方式，邮政机关可以使用邮资标签，而不必将其邮寄到邮件。索引标识符可以可选地用于索引发送者标识信息，以验证邮件的发件人是受信任的个人或实体。

10. 发明申请

US20090007455A1 HIGH HEEL SHOE OF IMPROVED COMFORT 审中-公开
标题翻译：高级舒适鞋改善舒适
公开(公告)号：US20090007455A1
公开(公告)日：2009-01-08
申请号：US12141260
申请日：2008-06-18
申请人： Scott Montgomery
发明人： Scott Montgomery
IPC分类号： A43B7/22 , A43B7/16 , A43B23/00 , A43B21/26 , A43B13/38
CPC分类号： A43B13/40 , A43B7/1445 , A43B7/223 , A43B13/37
摘要： In a high heel shoe the heel seat is angled upwards approximately 3-5 degrees. The insole follows the natural shape of the inside long arch of the foot so that the medial arch of the foot is raised higher than the lateral arch of the foot in order to support the natural angle of the calcaneus, the navicular, the medial cuneiform and the first metatarsal. The angle of the heel seat is more acute relative to the ground looking from the lateral side of the shoe. A triangular dome bump on the insole of the shoe has one corner behind the second metatarsal head, a second corner behind the fourth metatarsal head and the final corner near mid-foot. Material is added beneath the sole of the insole so that the greatest thickness is beneath the metatarsal heads and tapers to zero at the end of the insole toward the toes.
摘要翻译：在高跟鞋中，后跟座位向上倾斜约3-5度。鞋垫遵循脚的内部长拱形的自然形状，使得足部的内侧拱顶升高到足部的外侧弓，以支撑跟骨，舟状，内侧楔形物和第一跖骨脚跟座的角度相对于从鞋的侧面看的地面更为尖锐。鞋底上的三角形圆顶凹凸在第二跖骨头后面有一个角落，第四个跖骨头后面的第二个角落和中脚附近的最后一个角落。材料被添加在鞋垫的鞋底下面，使得最大厚度在跖骨下方，并且在鞋垫的末端朝向脚趾处成为零。

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