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1. 发明授权

US07550823B2 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same 有权
标题翻译：非易失性存储单元，其阵列，其制造方法和包括该非易失性存储单元的装置
公开(公告)号：US07550823B2
公开(公告)日：2009-06-23
申请号：US11777657
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L23/58 , H01L23/48 , H01L23/52 , H01L29/40 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/04 , H01L29/06 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513 , H01L29/66825 , H01L29/7881 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/773 , Y10S977/774 , Y10S977/784 , Y10S977/785
摘要： A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
摘要翻译：非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

2. 发明申请

US20080121887A1 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF AND MEMORY APPARATUS INCLUDING THEREOF 有权
标题翻译：非易失性存储器件及其制造方法及其存储器件
公开(公告)号：US20080121887A1
公开(公告)日：2008-05-29
申请号：US11777637
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L29/06 , H01L21/3205
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513
摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
摘要翻译：非易失性存储器件能够减少由多晶硅的粗糙表面引起的过大的漏电流，并且通过形成包括氮氧化硅（SiO 2）的第一氧化物膜，实现改进的阻挡功能，使用一氧化二氮（N 2 O 3）等离子体，并且通过形成富硅的氮化硅膜，以及其制造方法和包括非氧化氮（N 2 O 3）易失存储器件。此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

3. 发明授权

US07719047B2 Non-volatile memory device and fabrication method thereof and memory apparatus including thereof 有权
标题翻译：非易失性存储器件及其制造方法及其包括的存储装置
公开(公告)号：US07719047B2
公开(公告)日：2010-05-18
申请号：US11777637
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L29/06
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513
摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
摘要翻译：非易失性存储器件能够通过使用一氧化二氮（N 2 O）形成包括氮氧化硅（SiO x N y）层的第一氧化物膜，从而减少由于多晶硅的粗糙表面引起的过大的漏电流，并且实现改进的阻挡功能，等离子体，并且通过形成富硅的氮化硅膜及其制造方法和包括非易失性存储器件的存储装置。此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

4. 发明申请

US20100148181A1 NANOCRYSTAL SILICON LAYER STRUCTURES FORMED USING PLASMA DEPOSITION TECHNIQUE, METHODS OF FORMING THE SAME, NONVOLATILE MEMORY DEVICES HAVING THE NANOCRYSTAL SILICON LAYER STRUCTURES, AND METHODS OF FABRICATING THE NONVOLATILE MEMORY DEVICES 有权
标题翻译：使用等离子体沉积技术形成的纳米结构硅层结构，其形成方法，具有纳米晶层结构的非永久性存储器件，以及制造非易失性存储器件的方法
公开(公告)号：US20100148181A1
公开(公告)日：2010-06-17
申请号：US12388846
申请日：2009-02-19
申请人： Byoung Deog Choi , Jun Sin YI , Sung Wook Jung , Kyung Soo Jang , Jae Hyun Cho
发明人： Byoung Deog Choi , Jun Sin YI , Sung Wook Jung , Kyung Soo Jang , Jae Hyun Cho
IPC分类号： H01L29/792 , H01L21/20 , H01L29/04 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02436 , H01L21/02595 , H01L21/0262 , H01L21/28282 , H01L29/04 , H01L29/6675 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.
摘要翻译：提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

5. 发明授权

US07553720B2 Non-volatile memory device and fabrication method thereof 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07553720B2
公开(公告)日：2009-06-30
申请号：US11604222
申请日：2006-11-27
申请人： Byoung Deog Choi , Ki Yong Lee , Ho Kyoon Chung , Jun Sin Yi , Sung Wook Jung , Hyun Min Kim , Jun Sik Kim
发明人： Byoung Deog Choi , Ki Yong Lee , Ho Kyoon Chung , Jun Sin Yi , Sung Wook Jung , Hyun Min Kim , Jun Sik Kim
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/513
摘要： A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.
摘要翻译：非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物（SiON）层，所述SiON层上的第一绝缘体层，所述第一绝缘体上的氮化物膜，所述氮化物膜上的第二绝缘体层，所述第二绝缘体上的电极和源极 /漏极在多晶硅层。

6. 发明申请

US20070273291A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
标题翻译：有机发光显示装置
公开(公告)号：US20070273291A1
公开(公告)日：2007-11-29
申请号：US11683775
申请日：2007-03-08
申请人： Dae Chul Choi , Byoung Deog Choi
发明人： Dae Chul Choi , Byoung Deog Choi
IPC分类号： H05B37/02
CPC分类号： H01L27/3269 , H01L2251/558
摘要： An organic light emitting display device including: a substrate having a pixel region and a non-pixel region; a first buffer layer and a second buffer layer formed over the substrate; a thin film transistor formed over the second buffer layer; an organic light emitting device formed in the pixel region and electrically connected with the thin film transistor; and a photo diode formed in the non-pixel region, for receiving external light of red wavelength at a certain absorption rate, and for controlling brightness of the organic light emitting device. Here, the first buffer layer can be formed to be from 2900 Å to 3100 Å in thickness, the second buffer layer can be formed to be from 200 Å to 400 Å in thickness, and the photo diode can include: an N-type doping region, a channel region being from 3 to 10 μm in width, and a P-type doping region.
摘要翻译：一种有机发光显示装置，包括：具有像素区域和非像素区域的基板; 形成在所述基板上的第一缓冲层和第二缓冲层; 形成在所述第二缓冲层上的薄膜晶体管; 形成在所述像素区域并与所述薄膜晶体管电连接的有机发光器件; 以及形成在非像素区域中的光电二极管，用于以一定的吸收率接收红色波长的外部光，并用于控制有机发光器件的亮度。这里，第一缓冲层的厚度可以形成为2900埃至3100埃，第二缓冲层的厚度可以形成为从200到400埃，并且光电二极管可以包括：N型掺杂区域，宽度为3〜10μm的沟道区域和P型掺杂区域。

7. 发明授权

US08022622B2 Organic light-emitting display device including a photo diode 有权
标题翻译：包括光电二极管的有机发光显示装置
公开(公告)号：US08022622B2
公开(公告)日：2011-09-20
申请号：US11683775
申请日：2007-03-08
申请人： Dae Chul Choi , Byoung Deog Choi
发明人： Dae Chul Choi , Byoung Deog Choi
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3269 , H01L2251/558
摘要： An organic light emitting display device including: a substrate having a pixel region and a non-pixel region; a first buffer layer and a second buffer layer formed over the substrate; a thin film transistor formed over the second buffer layer; an organic light emitting device formed in the pixel region and electrically connected with the thin film transistor; and a photo diode formed in the non-pixel region, for receiving external light of red wavelength at a certain absorption rate, and for controlling brightness of the organic light emitting device. Here, the first buffer layer can be formed to be from 2900 Å to 3100 Å in thickness, the second buffer layer can be formed to be from 200 Å to 400 Å in thickness, and the photo diode can include: an N-type doping region, a channel region being from 3 to 10 μm in width, and a P-type doping region.
摘要翻译：一种有机发光显示装置，包括：具有像素区域和非像素区域的基板; 形成在所述基板上的第一缓冲层和第二缓冲层; 形成在所述第二缓冲层上的薄膜晶体管; 形成在所述像素区域并与所述薄膜晶体管电连接的有机发光器件; 以及形成在非像素区域中的光电二极管，用于以一定的吸收率接收红色波长的外部光，并用于控制有机发光器件的亮度。这里，第一缓冲层的厚度可以形成为2900埃至3100埃，第二缓冲层的厚度可以形成为从200到400埃，并且光电二极管可以包括：N型掺杂区域，宽度为3〜10μm的沟道区域和P型掺杂区域。

8. 发明申请

US20080169754A1 Organic electroluminescent display 有权
标题翻译：有机电致发光显示
公开(公告)号：US20080169754A1
公开(公告)日：2008-07-17
申请号：US11790658
申请日：2007-04-26
申请人： Sun A. Yang , Byoung Deog Choi
发明人： Sun A. Yang , Byoung Deog Choi
IPC分类号： H01J1/62
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2310/0256 , G09G2320/043 , G09G2320/045
摘要： An organic electroluminescent display that can prevent decreases in an average luminance of an organic electroluminescent element thereof includes: a data line to supply a data signal; a scan line to supply a scan signal; a first switching element having a control electrode electrically coupled to the scan line, to transfer the data signal from the data line; a first driving transistor having a control electrode electrically coupled to the first switching element, to control a driving current of a first voltage line; a first capacitive element having a first electrode electrically coupled to the first voltage line and having a second electrode electrically coupled to a control electrode of the first driving transistor; an organic electroluminescent element, electrically coupled to the first driving transistor and a third voltage line, to display an image in response to a current supplied from the first driving transistor; and a second voltage line to supply a reverse bias voltage of a second voltage line to the organic electroluminescent element.
摘要翻译：可以防止其有机电致发光元件的平均亮度降低的有机电致发光显示器包括：数据线，用于提供数据信号; 用于提供扫描信号的扫描线; 第一开关元件，具有电耦合到扫描线的控制电极，用于从数据线传输数据信号; 具有与第一开关元件电耦合的控制电极的第一驱动晶体管，以控制第一电压线的驱动电流; 第一电容元件，具有电耦合到第一电压线并具有电耦合到第一驱动晶体管的控制电极的第二电极的第一电极; 电耦合到第一驱动晶体管和第三电压线的有机电致发光元件，以响应于从第一驱动晶体管提供的电流显示图像; 以及第二电压线，用于向所述有机电致发光元件提供第二电压线的反向偏置电压。

9. 发明授权

US08477125B2 Photo sensor and organic light-emitting display using the same 有权
标题翻译：照片传感器和有机发光显示器使用相同
公开(公告)号：US08477125B2
公开(公告)日：2013-07-02
申请号：US11641842
申请日：2006-12-20
申请人： Hye Hyang Park , Byoung Deog Choi , Sun A Yang , Youn Chul Oh , Eun Jung Lee , Won Seok Kang
发明人： Hye Hyang Park , Byoung Deog Choi , Sun A Yang , Youn Chul Oh , Eun Jung Lee , Won Seok Kang
IPC分类号： G09G5/00
CPC分类号： H01L27/144 , H01L27/3269 , H01L31/145 , H01L31/153 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.
摘要翻译：有机发光显示器包括基板，基板上的薄膜晶体管，与薄膜晶体管电连接的有机发光二极管和具有并联连接的多个光电二极管的光电传感器。

10. 发明授权

US07880220B2 Non-volatile memory device and fabrication method of non-volatile memory device and memory apparatus including non-volatile memory device 有权
标题翻译：非易失性存储器件和非易失性存储器件的制造方法以及包括非易失性存储器件的存储器件
公开(公告)号：US07880220B2
公开(公告)日：2011-02-01
申请号：US11777613
申请日：2007-07-13
申请人： Byoung Deog Choi
发明人： Byoung Deog Choi
IPC分类号： H01L29/66
CPC分类号： H01L21/28282 , H01L27/3244 , H01L29/4234 , H01L29/513
摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and realizing improved blocking function with an oxide film that is thinner by forming a first oxide film and a second oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma. A fabricating method and a memory apparatus of the non-volatile memory device are also discussed.
摘要翻译：非易失性存储器件能够减少由于多晶硅的粗糙表面引起的过大的漏电流，并且通过形成第一氧化物膜的氧化膜和通过形成第一氧化物膜的第二氧化膜来实现改进的阻挡功能，使用一氧化二氮（N2O）等离子体的氮化物（SiO x N y）层。还讨论了非易失性存储器件的制造方法和存储装置。

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