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1. 发明授权

US07476896B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07476896B2
公开(公告)日：2009-01-13
申请号：US11361727
申请日：2006-02-23
申请人： Dae Chul Choi , Byoung Deog Choi , Choong Youl Im
发明人： Dae Chul Choi , Byoung Deog Choi , Choong Youl Im
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L29/15 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108
CPC分类号： H01L29/78603 , H01L29/66757
摘要： A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT includes forming at least one buffer layer on a substrate, forming a first semiconductor layer formed on the buffer layer and a second semiconductor layer by depositing a semiconductor doped with a dopant on the first semiconductor layer, patterning the second semiconductor layer to form source and drain regions, forming a gate insulating layer on the source and drain regions, and forming a gate electrode on the gate insulating layer.
摘要翻译：一种薄膜晶体管（TFT）及其制造方法，其中制造工艺简化，并且对栅绝缘层的损坏降低。制造TFT的方法包括在衬底上形成至少一个缓冲层，通过在第一半导体层上沉积掺杂有掺杂剂的半导体，形成在缓冲层上形成的第一半导体层和第二半导体层，使第二半导体以形成源极和漏极区域，在源极和漏极区域上形成栅极绝缘层，并且在栅极绝缘层上形成栅极电极。

2. 发明授权

US08022622B2 Organic light-emitting display device including a photo diode 有权
标题翻译：包括光电二极管的有机发光显示装置
公开(公告)号：US08022622B2
公开(公告)日：2011-09-20
申请号：US11683775
申请日：2007-03-08
申请人： Dae Chul Choi , Byoung Deog Choi
发明人： Dae Chul Choi , Byoung Deog Choi
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3269 , H01L2251/558
摘要： An organic light emitting display device including: a substrate having a pixel region and a non-pixel region; a first buffer layer and a second buffer layer formed over the substrate; a thin film transistor formed over the second buffer layer; an organic light emitting device formed in the pixel region and electrically connected with the thin film transistor; and a photo diode formed in the non-pixel region, for receiving external light of red wavelength at a certain absorption rate, and for controlling brightness of the organic light emitting device. Here, the first buffer layer can be formed to be from 2900 Å to 3100 Å in thickness, the second buffer layer can be formed to be from 200 Å to 400 Å in thickness, and the photo diode can include: an N-type doping region, a channel region being from 3 to 10 μm in width, and a P-type doping region.
摘要翻译：一种有机发光显示装置，包括：具有像素区域和非像素区域的基板; 形成在所述基板上的第一缓冲层和第二缓冲层; 形成在所述第二缓冲层上的薄膜晶体管; 形成在所述像素区域并与所述薄膜晶体管电连接的有机发光器件; 以及形成在非像素区域中的光电二极管，用于以一定的吸收率接收红色波长的外部光，并用于控制有机发光器件的亮度。这里，第一缓冲层的厚度可以形成为2900埃至3100埃，第二缓冲层的厚度可以形成为从200到400埃，并且光电二极管可以包括：N型掺杂区域，宽度为3〜10μm的沟道区域和P型掺杂区域。

3. 发明申请

US20070273291A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
标题翻译：有机发光显示装置
公开(公告)号：US20070273291A1
公开(公告)日：2007-11-29
申请号：US11683775
申请日：2007-03-08
申请人： Dae Chul Choi , Byoung Deog Choi
发明人： Dae Chul Choi , Byoung Deog Choi
IPC分类号： H05B37/02
CPC分类号： H01L27/3269 , H01L2251/558
摘要： An organic light emitting display device including: a substrate having a pixel region and a non-pixel region; a first buffer layer and a second buffer layer formed over the substrate; a thin film transistor formed over the second buffer layer; an organic light emitting device formed in the pixel region and electrically connected with the thin film transistor; and a photo diode formed in the non-pixel region, for receiving external light of red wavelength at a certain absorption rate, and for controlling brightness of the organic light emitting device. Here, the first buffer layer can be formed to be from 2900 Å to 3100 Å in thickness, the second buffer layer can be formed to be from 200 Å to 400 Å in thickness, and the photo diode can include: an N-type doping region, a channel region being from 3 to 10 μm in width, and a P-type doping region.
摘要翻译：一种有机发光显示装置，包括：具有像素区域和非像素区域的基板; 形成在所述基板上的第一缓冲层和第二缓冲层; 形成在所述第二缓冲层上的薄膜晶体管; 形成在所述像素区域并与所述薄膜晶体管电连接的有机发光器件; 以及形成在非像素区域中的光电二极管，用于以一定的吸收率接收红色波长的外部光，并用于控制有机发光器件的亮度。这里，第一缓冲层的厚度可以形成为2900埃至3100埃，第二缓冲层的厚度可以形成为从200到400埃，并且光电二极管可以包括：N型掺杂区域，宽度为3〜10μm的沟道区域和P型掺杂区域。

4. 发明申请

US20070273292A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE 审中-公开
标题翻译：有机发光显示装置
公开(公告)号：US20070273292A1
公开(公告)日：2007-11-29
申请号：US11683886
申请日：2007-03-08
申请人： Dae Chul Choi , Byoung Deog Choi , Kyoung Bo Kim
发明人： Dae Chul Choi , Byoung Deog Choi , Kyoung Bo Kim
IPC分类号： H05B37/02
CPC分类号： H01L27/3269 , H01L27/1446 , H01L31/035281 , H01L31/03682 , H01L31/105 , H01L31/153 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： An organic light emitting display device, which has a photo diode for receiving light of blue wavelengths. In one embodiment, an organic light emitting display device includes: a substrate having pixel and non-pixel regions; first and second buffer layers disposed over the substrate; a thin film transistor (TFT) disposed over the second buffer layer; an organic light emitting diode disposed in the pixel region over the TFT and electrically connected with the TFT; and a photo diode disposed on the second buffer layer in the non-pixel region and adapted to receive incident light of blue wavelength from an external source. A thickness of the first buffer layer ranges from 700 to 900 Å, and a thickness of the second buffer layer ranges from 500 to 700 Å. The photo diode includes N-type and P-type doping regions and an intrinsic region having a width ranging from 1 to 10 μm.
摘要翻译：一种有机发光显示装置，其具有用于接收蓝色波长的光的光电二极管。在一个实施例中，有机发光显示装置包括：具有像素和非像素区域的基板; 设置在基板上的第一和第二缓冲层; 设置在所述第二缓冲层上的薄膜晶体管（TFT）; 设置在TFT上的像素区域中并与TFT电连接的有机发光二极管; 以及设置在所述非像素区域中的所述第二缓冲层上并适于从外部源接收蓝色波长的入射光的光电二极管。第一缓冲层的厚度为700〜900，第二缓冲层的厚度为500〜700。光电二极管包括N型和P型掺杂区域和宽度范围为1-10μm的本征区域。

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