专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07501226B2 Immersion lithography system with wafer sealing mechanisms 有权
标题翻译：具有晶片密封机构的浸没光刻系统
公开(公告)号：US07501226B2
公开(公告)日：2009-03-10
申请号：US10874982
申请日：2004-06-23
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Shen Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Shen Yu , Jen Chieh Shih
IPC分类号： G03B27/52
CPC分类号： G03F7/70808 , G03F7/70341
摘要： An immersion lithography system is disclosed to comprise a fluid containing feature for providing an immersion fluid for performing immersion lithography on a wafer, and a seal ring covering a predetermined portion of a wafer edge for preventing the immersion fluid from leaking through the covered portion of the wafer edge while the fluid is used for the immersion lithography.
摘要翻译：公开了一种浸没式光刻系统，其包括用于提供用于在晶片上进行浸没式光刻的浸没流体的流体容纳特征，以及覆盖晶片边缘的预定部分的密封环，用于防止浸没流体泄漏通过晶片边缘，同时流体用于浸没光刻。

2. 发明申请

US20090180087A1 Seal Ring Arrangements for Immersion Lithography Systems 有权
标题翻译：浸入式光刻系统的密封环安排
公开(公告)号：US20090180087A1
公开(公告)日：2009-07-16
申请号：US12413194
申请日：2009-03-27
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
IPC分类号： G03B27/52 , H01L21/00
CPC分类号： G03F7/70341 , G03F7/707 , G03F7/70808
摘要： Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
摘要翻译：公开了用于浸没式光刻系统的各种密封环装置。利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

3. 发明申请

US20050286030A1 Immersion optical projection system 有权
标题翻译：浸入式光学投影系统
公开(公告)号：US20050286030A1
公开(公告)日：2005-12-29
申请号：US11009505
申请日：2004-12-10
申请人： Jen-Chieh Shih , Burn-Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Chun-Kuang Chen , Chin-Hsiang Lin , Horng-Huei Tseng
发明人： Jen-Chieh Shih , Burn-Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Chun-Kuang Chen , Chin-Hsiang Lin , Horng-Huei Tseng
IPC分类号： G03B27/52 , G03F7/20
CPC分类号： G03F7/70341
摘要： An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.
摘要翻译：提供了一种用于光刻的浸没式光学投影系统。在使用系统期间，透明板位于最后一个透镜元件和晶片之间。透明板具有透镜侧表面和晶片侧表面。该系统适于具有位于最后透镜元件和透明板的透镜侧表面之间的透镜侧流体层，例如当光刻工艺期间最后一个透镜元件可操作地位于晶片上方时。该系统还适于在系统的使用期间具有位于透明板的晶片侧表面和晶片之间的晶片侧流体层。晶片侧流体可以或可以不流体地连接到透镜侧流体。晶片侧流体可以或可以不与透镜侧流体不同。

4. 发明授权

US08563198B2 Device and method for providing wavelength reduction with a photomask 有权
标题翻译：用光掩模提供波长缩小的装置和方法
公开(公告)号：US08563198B2
公开(公告)日：2013-10-22
申请号：US13160231
申请日：2011-06-14
申请人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
发明人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
IPC分类号： G03F1/46 , G03F1/48
CPC分类号： G03F1/50 , G03F1/46
摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.
摘要翻译：公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

5. 发明申请

US20110244378A1 DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK 有权
标题翻译：用光源提供波长减小的装置和方法
公开(公告)号：US20110244378A1
公开(公告)日：2011-10-06
申请号：US13160231
申请日：2011-06-14
申请人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
发明人： Burn Jeng Lin , Jeng Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/50 , G03F1/46
摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.
摘要翻译：公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

6. 发明授权

US07924401B2 Seal ring arrangements for immersion lithography systems 有权
标题翻译：浸没式光刻系统的密封环布置
公开(公告)号：US07924401B2
公开(公告)日：2011-04-12
申请号：US12413194
申请日：2009-03-27
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/707 , G03F7/70808
摘要： Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
摘要翻译：公开了用于浸没式光刻系统的各种密封环装置。利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

7. 发明授权

US07517639B2 Seal ring arrangements for immersion lithography systems 有权
标题翻译：浸没式光刻系统的密封环布置
公开(公告)号：US07517639B2
公开(公告)日：2009-04-14
申请号：US11522611
申请日：2006-09-18
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/707 , G03F7/70808
摘要： Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
摘要翻译：公开了用于浸没式光刻系统的各种密封环装置。利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

8. 发明授权

US07180572B2 Immersion optical projection system 有权
标题翻译：浸入式光学投影系统
公开(公告)号：US07180572B2
公开(公告)日：2007-02-20
申请号：US11009505
申请日：2004-12-10
申请人： Jen-Chieh Shih , Burn-Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Chun-Kuang Chen , Chin-Hsiang Lin , Horng-Huei Tseng
发明人： Jen-Chieh Shih , Burn-Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Chun-Kuang Chen , Chin-Hsiang Lin , Horng-Huei Tseng
IPC分类号： G03B27/42
CPC分类号： G03F7/70341
摘要： An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.
摘要翻译：提供了一种用于光刻的浸没式光学投影系统。在使用系统期间，透明板位于最后一个透镜元件和晶片之间。透明板具有透镜侧表面和晶片侧表面。该系统适于具有位于最后透镜元件和透明板的透镜侧表面之间的透镜侧流体层，例如当光刻工艺期间最后一个透镜元件可操作地位于晶片上方时。该系统还适于在系统的使用期间具有位于透明板的晶片侧表面和晶片之间的晶片侧流体层。晶片侧流体可以或可以不流体地连接到透镜侧流体。晶片侧流体可以或可以不与透镜侧流体不同。

9. 发明授权

US08381139B2 Method for metal correlated via split for double patterning 有权
标题翻译：用于双重图案化的金属相互分离的方法
公开(公告)号：US08381139B2
公开(公告)日：2013-02-19
申请号：US13006608
申请日：2011-01-14
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Wen-Chun Huang
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Ru-Gun Liu , Wen-Chun Huang
IPC分类号： G06F17/50
CPC分类号： H01L22/10 , G03F1/70 , G03F7/70433 , G03F7/70466 , G06F17/5036 , G06F17/5072 , G06F17/5081 , H01L21/31144 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The embodiments of via mask splitting methods for double patterning technology described enable via patterning to align to a metal layer underneath or overlying to reduce overlay error and to increase via landing. If adjacent vias violate the G0-mask-split-rule for space or pitch (or both) between vias, the mask assignment of end vias are given higher priority to ensure good landing of end vias, since they are at higher risk of mislanding. The metal correlated via mask splitting methods enable better via performance, such as lower via resistance, and higher via yield.
摘要翻译：所描述的用于双重图案化技术的通孔掩模分裂方法的实施例使得能够经由图案化以对准下面的金属层或覆盖以减少覆盖误差并增加通过着陆。如果相邻的通孔违反了通孔之间的空间或间距（或两者）的G0-掩模分割规则，则优先考虑末端通孔的掩模分配，以确保最终通孔的良好着陆，因为它们具有较高的误放置风险。通过掩模分离方法相关的金属能够实现更好的通过性能，例如较低的通孔电阻和较高的通孔产量。

10. 发明授权

US07091502B2 Apparatus and method for immersion lithography 有权
标题翻译：浸没式光刻装置及方法
公开(公告)号：US07091502B2
公开(公告)日：2006-08-15
申请号：US10844178
申请日：2004-05-12
申请人： Tsai Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Burn Jeng Lin
发明人： Tsai Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Burn Jeng Lin
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341
摘要： An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.
摘要翻译：用于半导体制造的浸没式光刻系统提供了相对于晶片表面移动的透镜组件，并且包括联接到透镜组件并沿着透镜组件移动的喷嘴和排出组件。喷嘴和排出组件可以围绕透镜周向地相对设置，或者可以设置围绕透镜的环形环，并且包括多个可选择的交替喷嘴和排水沟。喷嘴和排出组件可旋转地围绕透镜。将被图案化的晶片的至少一部分浸入由喷嘴组件提供的液体中，并且通过操纵喷嘴和排出组件来控制流动方向。可以有利地向外指向流动方向以减少颗粒污染。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式