专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060222975A1 Integrated optical metrology and lithographic process track for dynamic critical dimension control 审中-公开
标题翻译：用于动态关键尺寸控制的集成光学测量和光刻工艺轨迹
公开(公告)号：US20060222975A1
公开(公告)日：2006-10-05
申请号：US11097737
申请日：2005-04-02
申请人： Chih-Ming Ke , Shing-Shen Yu , Yu-Hsi Wang , Tsai-Sheng Gau , Jacky Huang
发明人： Chih-Ming Ke , Shing-Shen Yu , Yu-Hsi Wang , Tsai-Sheng Gau , Jacky Huang
IPC分类号： G03B27/00 , G03C5/00
CPC分类号： G03F7/70625
摘要： A method and apparatus for improving a yield and throughput of a lithographic process track, the method including providing a first resist layer on a first process wafer; forming a first resist pattern in the first resist layer including a heating process according to a first temperature profile wherein the heating process comprises a plurality of temperature controllable heating zones; producing and collecting scattered light spectra from the first resist pattern processing the scattered light spectrum to obtain 3-dimensional information including first resist pattern critical dimensions; determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions including a second resist pattern on a second process wafer; and, forming the second resist pattern dimensions including the heating process according to the second temperature profile.
摘要翻译：一种用于提高光刻处理轨迹的产量和产量的方法和装置，所述方法包括在第一处理晶片上提供第一抗蚀剂层; 在第一抗蚀剂层中形成第一抗蚀剂图案，其包括根据第一温度分布的加热过程，其中加热过程包括多个温度可控的加热区; 从第一抗蚀剂图案产生和收集散射光谱，处理散射光谱以获得包括第一抗蚀剂图案临界尺寸的3维信息; 确定用于执行加热过程的第二温度分布，以实现包括第二处理晶片上的第二抗蚀剂图案的目标抗蚀剂图案临界尺寸; 以及形成包括根据第二温度曲线的加热处理的第二抗蚀剂图案尺寸。

IPRDB

热门服务

关于我们

友情链接

联系方式