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1. 发明授权

US08688254B2 Multiple tools using a single data processing unit 有权
标题翻译：使用单个数据处理单元的多种工具
公开(公告)号：US08688254B2
公开(公告)日：2014-04-01
申请号：US11871360
申请日：2007-10-12
申请人： Burn Jeng Lin
发明人： Burn Jeng Lin
IPC分类号： G06F19/00 , B05B5/025 , B05C5/00 , B05C9/08 , B05C11/00 , C23C14/30 , H05B7/00
CPC分类号： G03F7/70991 , G03F7/70383 , G03F7/70508
摘要： A method and system for simultaneously processing multiple substrates through an imaging beam process is provided. The system includes a plurality of direct write substrate exposure modules configured to receive a writing instruction from a data processing unit. The system and method of the invention utilizes multiple exposure modules receiving writing instructions from a single common data processing unit.
摘要翻译：提供了一种通过成像束过程同时处理多个基板的方法和系统。该系统包括被配置为从数据处理单元接收写入指令的多个直接写入基板曝光模块。本发明的系统和方法利用从单个公共数据处理单元接收写入指令的多个曝光模块。

2. 发明申请

US20130232455A1 ERROR DIFFUSION AND GRID SHIFT IN LITHOGRAPHY 有权
标题翻译：误差扩展和网格移位在LITHOGRAPHY
公开(公告)号：US20130232455A1
公开(公告)日：2013-09-05
申请号：US13409765
申请日：2012-03-01
申请人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
发明人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The present disclosure involves a method of data preparation in lithography processes. The method of data preparation includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, and converting the IC layout design GDS grid to a second exposure grid by applying an error diffusion and a grid shift technique to a sub-pixel exposure grid.
摘要翻译：本公开涉及在光刻工艺中的数据准备方法。数据准备的方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，并且通过向第二曝光网格应用误差扩散和网格移位技术将IC布局设计GDS网格转换为第二曝光网格子像素曝光网格。

3. 发明申请

US20130232453A1 NON-DIRECTIONAL DITHERING METHODS 有权
标题翻译：非方向抖动方法
公开(公告)号：US20130232453A1
公开(公告)日：2013-09-05
申请号：US13409653
申请日：2012-03-01
申请人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
发明人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G03F7/00 , G03F1/00 , G03F7/70433 , G06F17/5081 , G06F19/00 , G21K5/00
摘要： A method of data preparation in lithography processes is described. The method includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, converting the IC layout design GDS grid to a first exposure grid, applying a non-directional dither technique to the first exposure, coincident with applying dithering to the first expose grid, applying a grid shift to the first exposure grid to generate a grid-shifted exposure grid and applying a dither to the grid-shifted exposure grid, and adding the first exposure grid (after receiving dithering) to the grid-shifted exposure grid (after receiving dithering) to generate a second exposure grid.
摘要翻译：描述了光刻工艺中数据准备的方法。该方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，将IC布局设计GDS网格转换为第一曝光网格，将非定向抖动技术应用于第一曝光，与应用将第一曝光栅格抖动到第一曝光栅格，将栅格移位施加到第一曝光栅格以产生栅格移动的曝光栅格并向栅格曝光栅格施加抖动，并将第一曝光栅格（在接收抖动之后）添加到栅格转换曝光网格（在接收到抖动之后）以产生第二曝光网格。

4. 发明授权

US08488102B2 Immersion fluid for immersion lithography, and method of performing immersion lithography 有权
标题翻译：浸没式光刻用浸渍液，以及进行浸渍光刻的方法
公开(公告)号：US08488102B2
公开(公告)日：2013-07-16
申请号：US12731752
申请日：2010-03-25
申请人： Yee-Chia Yeo , Burn-Jeng Lin , Chenming Hu
发明人： Yee-Chia Yeo , Burn-Jeng Lin , Chenming Hu
IPC分类号： G03F7/207
CPC分类号： G03F7/70341
摘要： An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.
摘要翻译：浸没式光刻系统10包括光学表面51，具有与光学表面的至少一部分接触的pH小于7的浸没流体60以及具有最高光致抗蚀剂层70的半导体结构80，其中光致抗蚀剂的一部分在与浸液接触。此外，一种用于照射具有最高光致抗蚀剂层70的半导体结构80的方法，包括以下步骤：将浸没流体60引入到光学表面51和光致抗蚀剂层之间的空间中，其中浸没流体的pH小于7，并且通过浸渍流体优选将波长小于450nm的光引导到光致抗蚀剂上。

5. 发明申请

US20120074400A1 MULTIPLE EDGE ENABLED PATTERNING 有权
标题翻译：多边形启用方式
公开(公告)号：US20120074400A1
公开(公告)日：2012-03-29
申请号：US12892403
申请日：2010-09-28
申请人： Ming-Feng Shieh , Ya Hui Chang , Ru-Gun Liu , Tsong-Hua Ou , Ken-Hsien Hsieh , Burn Jeng Lin
发明人： Ming-Feng Shieh , Ya Hui Chang , Ru-Gun Liu , Tsong-Hua Ou , Ken-Hsien Hsieh , Burn Jeng Lin
IPC分类号： H01L23/544 , G03F7/20
CPC分类号： H01L23/544 , G03F1/42 , G03F9/7076 , H01L21/0337 , H01L21/0338 , H01L2924/0002 , H01L2924/00
摘要： Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.
摘要翻译：提供具有多个次分辨率元素的对准标记。子分辨率元素各自具有小于可由对准过程中使用的对准信号检测的最小分辨率的维度。还提供了其上形成有第一，第二和第三图案的半导体晶片。第一和第二图案在第一方向上延伸，并且第三图案沿垂直于第一方向的第二方向延伸。第二图案与第一图案分离在第二方向上测量的第一距离。第三图案与第一图案分离在第一方向上测量的第二距离。第三图案与第二图案分离在第一方向上测量的第三距离。第一距离近似等于第三距离。第二距离小于第一距离的两倍。

6. 发明授权

US08143602B2 High-volume manufacturing massive e-beam maskless lithography system 有权
标题翻译：大批量生产大规模电子束无掩模光刻系统
公开(公告)号：US08143602B2
公开(公告)日：2012-03-27
申请号：US12411229
申请日：2009-03-25
申请人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
发明人： Jeng-Horng Chen , Shy-Jay Lin , Burn Jeng Lin
IPC分类号： G21K5/08
CPC分类号： G03F7/70275 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70508 , H01J37/3177 , H01J2237/31762
摘要： The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.
摘要翻译：本公开提供一种无掩模光刻设备。该装置包括多个写入室，每个写入室包括：可操作以固定要写入的晶片的晶片台和可操作以提供用于写入晶片的多个辐射束的多光束模块; 可操作以在每个写入室之间传送晶片的接口和用于将成像层处理到晶片的轨道单元; 以及数据路径，其可操作以向每个写入室中的每个多个辐射束提供一组电路图案数据。

7. 发明授权

US08110345B2 High resolution lithography system and method 有权
标题翻译：高分辨率光刻系统及方法
公开(公告)号：US08110345B2
公开(公告)日：2012-02-07
申请号：US11043304
申请日：2005-01-26
申请人： Chin-Hsiang Lin , Burn Jeng Lin
发明人： Chin-Hsiang Lin , Burn Jeng Lin
IPC分类号： G03F7/20 , G03F7/26
CPC分类号： G03F7/70466 , G03F7/001 , G03F7/201 , G03F7/203 , G03F7/70408
摘要： Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.
摘要翻译：提供了高分辨率光刻系统和方法。在一个示例中，用于在衬底上产生图案的方法包括将图案分离成至少包含沿第一方向定向的线的第一子图案和包含沿第二方向定向的线的第二子图案。使用第一驻波干涉图案，在基板上的第一感光材料层上产生沿第一方向取向的线。所创建的线的一部分被修剪以创建第一子图案。在形成第一子图案之后，将第二层感光材料施加到基板上。使用第二驻波干涉图形在第二层上产生朝向第二方向的线。创建的线的一部分被修剪以创建第二子图案。

8. 发明授权

US07972761B2 Photoresist materials and photolithography process 有权
标题翻译：光刻胶材料和光刻工艺
公开(公告)号：US07972761B2
公开(公告)日：2011-07-05
申请号：US11462413
申请日：2006-08-04
申请人： Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
发明人： Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/30 , G03F7/38 , G03F7/70858 , Y10S430/106 , Y10S430/111
摘要： A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
摘要翻译：用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合响应辐射能量。

9. 发明授权

US07934177B2 Method and system for a pattern layout split 有权
标题翻译：图案布局拆分的方法和系统
公开(公告)号：US07934177B2
公开(公告)日：2011-04-26
申请号：US11671866
申请日：2007-02-06
申请人： Jaw-Jung Shin , King-Chang Shu , Tsai-Sheng Gau , Burn Jeng Lin
发明人： Jaw-Jung Shin , King-Chang Shu , Tsai-Sheng Gau , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G03F1/70 , G03F7/70466
摘要： A method for splitting a pattern layout including providing the pattern layout having features, checking the pattern layout to determine the features that require splitting, coloring the features that require splitting with a first and second color, resolving coloring conflicts by decomposing the feature with the coloring conflict and coloring the decomposed feature with the first and second color, and generating a first mask with features of the first color and a second mask with features of the second color.
摘要翻译：一种用于分割图案布局的方法，包括提供具有特征的图案布局，检查图案布局以确定需要分割的特征，着色需要用第一和第二颜色分割的特征，通过用着色分解特征来解决着色冲突冲突和着色具有第一和第二颜色的分解特征，以及生成具有第一颜色特征的第一掩模和具有第二颜色特征的第二掩模。

10. 发明申请

US20110059396A1 PATTERNING PROCESS AND CHEMICAL AMPLIFIED PHOTORESIST WITH A PHOTODEGRADABLE BASE 有权
标题翻译：具有可光控基座的图案处理和化学放大光电
公开(公告)号：US20110059396A1
公开(公告)日：2011-03-10
申请号：US12555145
申请日：2009-09-08
申请人： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
发明人： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/114 , Y10S430/12 , Y10S430/128
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
摘要翻译：公开了一种用于制造集成电路器件的方法。该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包含可光降解的基材; 并暴露第二材料层的至少一部分。

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