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1. 发明申请

US20090245302A1 METHODS AND SYSTEMS FOR DYNAMICALLY GENERATING TAILORED LASER PULSES 有权
标题翻译：动态生成定制激光脉冲的方法和系统
公开(公告)号：US20090245302A1
公开(公告)日：2009-10-01
申请号：US12060076
申请日：2008-03-31
申请人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
发明人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
IPC分类号： H01S3/10
CPC分类号： H01S3/1305 , B23K26/0622 , H01S3/0057 , H01S3/102
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数基于比较。

2. 发明授权

US08526473B2 Methods and systems for dynamically generating tailored laser pulses 有权
标题翻译：动态产生定制激光脉冲的方法和系统
公开(公告)号：US08526473B2
公开(公告)日：2013-09-03
申请号：US12060076
申请日：2008-03-31
申请人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
发明人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
IPC分类号： H01L21/302 , H01S3/10 , B23K26/38
CPC分类号： H01S3/1305 , B23K26/0622 , H01S3/0057 , H01S3/102
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数基于比较。

3. 发明申请

US20100084662A1 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS OVERLAPPING LENGTHWISE ON A STRUCTURE 审中-公开
标题翻译：使用多个激光束的半导体结构处理在结构上重叠长度
公开(公告)号：US20100084662A1
公开(公告)日：2010-04-08
申请号：US12633123
申请日：2009-12-08
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： H01L29/04 , H01L21/00 , B23K26/067 , B23K26/36
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

4. 发明授权

US07633034B2 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure 有权
标题翻译：使用在结构上纵向重叠的多个激光束点的半导体结构处理
公开(公告)号：US07633034B2
公开(公告)日：2009-12-15
申请号：US11051261
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

5. 再颁专利

USRE43487E1 Laser segmented cutting 有权
标题翻译：激光分段切割
公开(公告)号：USRE43487E1
公开(公告)日：2012-06-26
申请号：US12350767
申请日：2009-01-08
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要翻译：通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。该技术可用于切割具有各种不同激光和波长的各种材料。多步骤过程可以优化每个单独层的激光工艺。

6. 再颁专利

USRE43605E1 Laser segmented cutting, multi-step cutting, or both 有权
标题翻译：激光分段切割，多步切割或两者兼容
公开(公告)号：USRE43605E1
公开(公告)日：2012-08-28
申请号：US12351562
申请日：2009-01-09
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要翻译：通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。该技术可用于切割具有各种不同激光和波长的各种材料。多步骤过程可以优化每个单独层的激光工艺。

7. 再颁专利

USRE43400E1 Laser segmented cutting, multi-step cutting, or both 有权
公开(公告)号：USRE43400E1
公开(公告)日：2012-05-22
申请号：US11332815
申请日：2006-01-13
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

8. 发明申请

US20050087522A1 Laser processing of a locally heated target material 审中-公开
标题翻译：激光加工局部加热的靶材
公开(公告)号：US20050087522A1
公开(公告)日：2005-04-28
申请号：US10777973
申请日：2004-02-11
申请人： Yunlong Sun , Liu Jinjiao , Richard Harris , Pradeep Subrahmanyan , Robert Hainsey , Weixiong Lu
发明人： Yunlong Sun , Liu Jinjiao , Richard Harris , Pradeep Subrahmanyan , Robert Hainsey , Weixiong Lu
IPC分类号： B23K26/06 , B23K26/38 , H05K3/00
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/42 , B23K2103/50 , B23K2103/52 , B23K2103/56 , H05K3/0038 , H05K2203/108 , H05K2203/1105
摘要： A method and laser system effect rapid removal of material from a workpiece by applying heating energy in the form of a light beam to a target location on the workpiece to elevate its temperature while maintaining its dimensional stability. When the target portion of the workpiece is heated, a laser beam is directed for incidence on the heated target location. The laser beam preferably has a processing laser output that is appropriate to effect removal of the target material from the workpiece. The combined incidence of the processing laser output and the heating energy on the target location enables the processing laser output to remove a portion of the target material at a material removal rate that is higher than the material removal rate achievable when the target material is not heated.
摘要翻译：一种方法和激光系统通过将光束形式的加热能量施加到工件上的目标位置来实现材料从工件的快速移除，以提高其温度同时保持其尺寸稳定性。当工件的目标部分被加热时，激光束被引导以被加热到目标位置上。激光束优选地具有适合于从工件去除目标材料的处理激光输出。处理激光输出和加热能量在目标位置的组合发生率使得处理激光输出能够以高于目标材料不加热时可实现的材料去除速率的材料去除速率去除目标材料的一部分。

9. 发明申请

US20060128073A1 Multiple-wavelength laser micromachining of semiconductor devices 审中-公开
标题翻译：半波长激光微加工半导体器件
公开(公告)号：US20060128073A1
公开(公告)日：2006-06-15
申请号：US11067464
申请日：2005-02-25
申请人： Yunlong Sun , Richard Harris , Kelly Bruland , Robert Hainsey , Ho Lo , Lei Sun
发明人： Yunlong Sun , Richard Harris , Kelly Bruland , Robert Hainsey , Ho Lo , Lei Sun
IPC分类号： H01L21/82 , B23K26/16
CPC分类号： H01L23/5258 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/067 , B23K26/361 , B23K26/40 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/50 , H01L2924/0002 , H01S3/10046 , H01S3/2383 , Y10S438/94 , H01L2924/00
摘要： A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.
摘要翻译：在轮廓不同时刻，不同激光波长的特殊形状的激光脉冲能量分布提供了减少的受控抖动，从而能够实现高质量处理和较小可能光斑尺寸的半导体器件微机械加工。

10. 发明申请

US20050041976A1 Generating sets of tailored laser pulses 有权
标题翻译：生成一组定制的激光脉冲
公开(公告)号：US20050041976A1
公开(公告)日：2005-02-24
申请号：US10921765
申请日：2004-08-18
申请人： Yunlong Sun , Robert Hainsey
发明人： Yunlong Sun , Robert Hainsey
IPC分类号： B23K20060101 , B23K26/06 , B23K26/38 , H01S20060101 , H04J14/02
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K2101/40 , H01L2924/0002 , H01L2924/00
摘要： In a master oscillator power amplifier, a driver (208) of a diode laser (202) is specially controlled to generate a set of two or more injection laser pulses that are injected into a power amplifier (204) operated in an unsaturated state to generate a set (50) of laser pulses (52) that replicate the temporal power profile of the injection laser pulses to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. Each set (50) includes at least one specially tailored pulse (52) and/or two or more pulses (50) having different temporal power profiles. The duration of the set (50) is short enough to be treated as a single “pulse” by conventional positioning systems (380) to perform on-the-fly link removal without stopping.
摘要翻译：在主振荡器功率放大器中，特别地控制二极管激光器（202）的驱动器（208），以产生注入到以不饱和状态操作的功率放大器（204）中的两个或更多个注入激光脉冲的集合，以产生一组（50）激光脉冲（52），其复制所述注入激光脉冲的时间功率分布以去除存储器或其它IC芯片中的导电连接（22）和/或其上覆钝化层（44）。每个组（50）包括具有不同时间功率分布的至少一个特别定制的脉冲（52）和/或两个或更多个脉冲（50）。集合（50）的持续时间足够短以被常规定位系统（380）视为单个“脉冲”，以在不停止的情况下执行即时链路去除。

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