专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06674291B1 Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom 有权
标题翻译：用于确定和/或改善薄膜谐振器装置中的高功率可靠性的方法和装置，以及由此产生的薄膜谐振器装置
公开(公告)号：US06674291B1
公开(公告)日：2004-01-06
申请号：US09669681
申请日：2000-09-26
申请人： Bradley Paul Barber , Peter Ledel Gammel , Juan A. Herbsommer , Hugo F. Safar , Yiu-Huen Wong
发明人： Bradley Paul Barber , Peter Ledel Gammel , Juan A. Herbsommer , Hugo F. Safar , Yiu-Huen Wong
IPC分类号： G01R2702
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.
摘要翻译：已经显示电迁移的影响导致仅在几个小时内对诸如薄膜谐振器（TFR）器件的电子器件的金属电极的损坏，用于在这些器件的工作范围内的测试输入功率。已经确定这种故障对输入功率的频率敏感。本发明提供一种用于确定电子设备中的高功率可靠性的方法和装置，以便能够准确地确定电子设备的故障时间，并因此能够预测寿命。作为用于测试设备的方法的一部分，该确定与施加到电子设备的输入功率的频率无关。基于上述结果，已经开发了一种TFR器件，其包括保护或电迁移减少层，例如钛沉积在器件的电极上。具有改进的电极结构的TFR器件可以在更高的功率水平下工作，并且具有比目前可用的更长的工作寿命。

2. 发明授权

US06603241B1 Acoustic mirror materials for acoustic devices 有权
标题翻译：用于声学设备的声镜材料
公开(公告)号：US06603241B1
公开(公告)日：2003-08-05
申请号：US09576807
申请日：2000-05-23
申请人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
发明人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
IPC分类号： H03H925
CPC分类号： H03H9/175
摘要： A reflector stack or acoustic mirror arrangement for an acoustic device is described which may attain the highest possible impedance mismatch between alternating higher and lower impedance reflecting layers of the stack, so as to maximize bandwidth. The arrangement may also reduce manufacturing costs by requiring fewer layers for the device, as compared to conventional acoustic mirrors. The thinner reflecting stack is accordingly fabricated in reduced time to lower cost, by incorporating materials providing a larger acoustic impedance mismatch than those currently obtainable. The bandwidth of the resulting acoustic resonator device may be widened, particularly when a low density material such as aerogel, CVD SiO2 and/or sputter deposited SiO2 is applied as topmost layer in the reflector stack/acoustic mirror arrangement of the device.
摘要翻译：描述了用于声学装置的反射器叠层或声镜装置，其可以在堆叠的交替的较高和较低阻抗反射层之间达到最高可能的阻抗失配，从而最大化带宽。与传统的声反射镜相比，该装置还可以通过要求较少的器件层来降低制造成本。因此，通过结合提供比目前可获得的更大的声阻抗失配的材料，减少了较薄的反射叠层，从而降低了成本。特别是当诸如气凝胶，CVD SiO 2和/或溅射沉积的SiO 2之类的低密度材料作为装置的反射器叠层/声镜装置中的最顶层被施加时，所得到的声共振器装置的带宽可能变宽。

3. 发明授权

US06420202B1 Method for shaping thin film resonators to shape acoustic modes therein 有权
公开(公告)号：US06420202B1
公开(公告)日：2002-07-16
申请号：US09571919
申请日：2000-05-16
申请人： Bradley Paul Barber , Peter Ledel Gammel , Harold A. Huggins , Yiu-Huen Wong
发明人： Bradley Paul Barber , Peter Ledel Gammel , Harold A. Huggins , Yiu-Huen Wong
IPC分类号： H01L2100
CPC分类号： H03H9/175 , H03H3/02
摘要： A process for configuring a thin film resonator to advantageously shape a desired acoustic mode of the resonator such that the electrical and acoustic performance of the resonator is enhanced. As a result of the contouring or shaping, a minimum amount of acoustic energy occurs near the edge of the resonator, from which energy may leak or at which undesired waves may be created by a desired mode. The process is used during batch-fabrication of thin-film resonators which are used in high frequency RF filtering or frequency control applications. Utilizing photolithography, the shaping can be achieved in a manner derived from the known methods used to manufacture lens arrays. Using the process, the lateral motion of acoustic waves within the resonator may be controlled and the acoustic energy of the sound wave positioned at a desired location within the resonator.

4. 发明授权

US06339276B1 Incremental tuning process for electrical resonators based on mechanical motion 有权
标题翻译：基于机械运动的电谐振器的增量调谐过程
公开(公告)号：US06339276B1
公开(公告)日：2002-01-15
申请号：US09431772
申请日：1999-11-01
申请人： Bradley Paul Barber , Yiu-Huen Wong
发明人： Bradley Paul Barber , Yiu-Huen Wong
IPC分类号： H01L4104
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译：本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。使用交替选择性蚀刻来从顶部电极去除不同的调节层。其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的谐振器的谐振频率。

5. 发明授权

US06635519B2 Structurally supported thin film resonator and method of fabrication 有权
标题翻译：结构上支撑的薄膜谐振器和制造方法
公开(公告)号：US06635519B2
公开(公告)日：2003-10-21
申请号：US10043969
申请日：2002-01-10
申请人： Bradley Paul Barber , Peter Ledel Gammel , Yiu-Huen Wong
发明人： Bradley Paul Barber , Peter Ledel Gammel , Yiu-Huen Wong
IPC分类号： H01L2100
CPC分类号： H03H9/564 , H03H3/04 , H03H9/583
摘要： In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.
摘要翻译：在薄膜谐振器中，压电膜设置在基板上。第一支撑结构限定了衬底上的空间并且支撑压电膜的边缘，使得压电膜设置在该空间上。另外的支撑结构设置在压缩膜的空间内。

6. 发明授权

US06307447B1 Tuning mechanical resonators for electrical filter 有权
标题翻译：调谐电机滤波器的机械谐振器
公开(公告)号：US06307447B1
公开(公告)日：2001-10-23
申请号：US09432040
申请日：1999-11-01
申请人： Bradley Paul Barber , Yiu-Huen Wong , Peter L. Gammel
发明人： Bradley Paul Barber , Yiu-Huen Wong , Peter L. Gammel
IPC分类号： H03H954
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0435 , Y10T29/42
摘要： The present invention is a method for adjusting different resonant frequencies of a plurality of mechanical resonators formed on a common substrate, in a case where the resonant frequencies of the resonators are a function of each resonator thickness. According to this method the resonators are each formed with an etchable top electrode layer which includes a material having different etching properties as a topmost layer for each of the resonators having different resonant frequencies. By selectively etching these etchable layers one at a time in the presence of the others, one may adjust the resonant frequencies of each of the resonators without need to mask the resonators during the etching process. Associated with this method there is a resonator structure having a top electrode structure having a topmost layer having different etching characteristics for different resonators.
摘要翻译：本发明是在谐振器的谐振频率为每个谐振器厚度的函数的情况下，调整形成在公共基板上的多个机械谐振器的不同谐振频率的方法。根据该方法，谐振器各自形成有可蚀刻的顶部电极层，其包括具有不同蚀刻性质的材料作为具有不同谐振频率的每个谐振器的最顶层。通过在其他存在的情况下一次一个地选择性地蚀刻这些可蚀刻层，可以调整每个谐振器的谐振频率，而不需要在蚀刻过程期间掩蔽谐振器。与该方法相关联的是具有顶部电极结构的谐振器结构，其具有不同谐振器的具有不同蚀刻特性的最顶层。

7. 发明授权

US07631412B2 Incremental tuning process for electrical resonators based on mechanical motion 有权
公开(公告)号：US07631412B2
公开(公告)日：2009-12-15
申请号：US11869997
申请日：2007-10-10
申请人： Bradley Paul Barber , Yiu-Huen Wong
发明人： Bradley Paul Barber , Yiu-Huen Wong
IPC分类号： H04R31/00 , H01L41/083
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.

8. 发明授权

US07328497B2 Incremental tuning process for electrical resonators based on mechanical motion 有权
标题翻译：基于机械运动的电谐振器的增量调谐过程
公开(公告)号：US07328497B2
公开(公告)日：2008-02-12
申请号：US11146179
申请日：2005-06-06
申请人： Bradley Paul Barber , Yiu-Huen Wong
发明人： Bradley Paul Barber , Yiu-Huen Wong
IPC分类号： H01L41/047
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： A method is provided for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译：提供了一种用于调节机械谐振器的谐振频率的方法，其机械谐振器的频率取决于整个谐振器厚度。使用交替选择性蚀刻来从顶部电极去除不同的调节层。其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的谐振器的谐振频率。

9. 发明授权

US08225472B2 Methods of fabricating a membrane with improved mechanical integrity 有权
标题翻译：制造具有改善的机械完整性的膜的方法
公开(公告)号：US08225472B2
公开(公告)日：2012-07-24
申请号：US13012936
申请日：2011-01-25
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H04R17/10 , B05D5/12
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Forming a thin film acoustic device by patterning a layer of non-conducting material on a first side of a substrate to expose a portion of the first substrate side; depositing layers of conducting material on the layer of non-conducting material and the exposed portion of the first substrate side; depositing a layer of piezoelectric material on the layers of conducting material; depositing and patterning additional layers of material on the layer of piezoelectric material to form a first device electrode; depositing and patterning a masking layer on a second side of the substrate to expose a portion of the second substrate side; etching away the exposed substrate portion to expose the patterned layer of non-conducting material and a portion of the layers of conducting material; and etching away the exposed portion of the layers of conducting material to form a second device electrode.
摘要翻译：通过在衬底的第一侧上图案化非导电材料层以暴露第一衬底侧的一部分来形成薄膜声学器件; 在非导电材料层和第一衬底侧的暴露部分上沉积导电材料层; 在导电材料层上沉积一层压电材料; 在所述压电材料层上沉积和图形附加的材料层以形成第一器件电极; 在所述衬底的第二侧上沉积和图案化掩模层以暴露所述第二衬底侧的一部分; 蚀刻掉暴露的衬底部分以暴露非导电材料的图案化层和导电材料层的一部分; 并蚀刻掉导电材料层的暴露部分以形成第二器件电极。

10. 发明授权

US07895720B2 Methods of fabricating a membrane with improved mechanical integrity 有权
标题翻译：制造具有改善的机械完整性的膜的方法
公开(公告)号：US07895720B2
公开(公告)日：2011-03-01
申请号：US12185305
申请日：2008-08-04
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H04R17/00 , B44C1/22
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译：公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。因此，该方法特别适用于膜释放技术。消除或减少台阶或边缘的高度以增加膜的机械完整性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式