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    • 1. 发明申请
    • Low voltage memory device and method thereof
    • 低电压存储器件及其方法
    • US20070280026A1
    • 2007-12-06
    • US11435942
    • 2006-05-17
    • Bradford HunterDavid BurnettTroy CooperPrashant KenkareRavindraj RamarajuAndrew RusselShayan ZhangMichael Snyder
    • Bradford HunterDavid BurnettTroy CooperPrashant KenkareRavindraj RamarajuAndrew RusselShayan ZhangMichael Snyder
    • G11C5/14
    • G11C5/143G11C5/147
    • A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.
    • 公开了一种具有低电压存储器件的器件。 该设备包括具有第一存储器拓扑的第一存储器和具有第二存储器拓扑的第二存储器,其中两个存储器位于集成电路中。 第一存储器是相对高密度存储器件,能够存储相对于第二存储器的大量数据。 第二存储器是能够相对于可以访问第一存储器的电压的低电压访问的低电压存储器件。 因此,当集成电路处于低电压工作模式时,第二存储器可访问,这可以表示第一存储器或集成电路的其它部分的数据保持状态(睡眠状态)。 因此,该设备能够在正常或主动操作模式下将大量数据存储在高密度存储器中,并且还可以在低电压操作模式期间访问低电压存储器。
    • 2. 发明授权
    • Low voltage memory device and method thereof
    • 低电压存储器件及其方法
    • US07675806B2
    • 2010-03-09
    • US11435942
    • 2006-05-17
    • Bradford HunterDavid BurnettTroy CooperPrashant KenkareRavindraj RamarajuAndrew RussellShayan ZhangMichael Snyder
    • Bradford HunterDavid BurnettTroy CooperPrashant KenkareRavindraj RamarajuAndrew RussellShayan ZhangMichael Snyder
    • G11C5/14
    • G11C5/143G11C5/147
    • A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.
    • 公开了一种具有低电压存储器件的器件。 该设备包括具有第一存储器拓扑的第一存储器和具有第二存储器拓扑的第二存储器,其中两个存储器位于集成电路中。 第一存储器是相对高密度存储器件,能够存储相对于第二存储器的大量数据。 第二存储器是能够相对于可以访问第一存储器的电压的低电压访问的低电压存储器件。 因此,当集成电路处于低电压工作模式时,第二存储器可访问,这可以表示第一存储器或集成电路的其它部分的数据保持状态(睡眠状态)。 因此,该器件能够在正常或主动操作模式下将大量数据存储在高密度存储器中,并且还可以在低电压操作模式期间访问低电压存储器。
    • 3. 发明申请
    • INTEGRATED CIRCUIT HAVING A MEMORY WITH LOW VOLTAGE READ/WRITE OPERATION
    • 具有低电压读/写操作的存储器的集成电路
    • US20080019206A1
    • 2008-01-24
    • US11863961
    • 2007-09-28
    • Prashant KenkareAndrew RussellDavid BeardenJames BurnettTroy CooperShayan Zhang
    • Prashant KenkareAndrew RussellDavid BeardenJames BurnettTroy CooperShayan Zhang
    • G11C5/14
    • G11C11/417G11C5/147G11C11/419
    • An integrated circuit with a low voltage read/write operation is provided. The integrated circuit may include a processor and a plurality of memory cells organized in rows and columns and coupled to the processor, wherein a row of memory cells comprises a word line and all of the memory cells coupled to the word line, and wherein a column of memory cells comprises a bit line and all of the memory cells coupled to the bit line. The integrated circuit may further include a first power supply voltage terminal for receiving a first power supply voltage, wherein the first power supply voltage is provided to power the processor, and wherein the first power supply voltage is provided to power the plurality of memory cells during a first access operation of the plurality of memory cells. The integrated circuit may further include a second power supply voltage terminal for receiving a second power supply voltage higher than the first power supply voltage, wherein the second power supply voltage is provided to power the plurality of memory cells during a second access operation of the plurality of memory cells.
    • 提供具有低电压读/写操作的集成电路。 集成电路可以包括处理器和以行和列组织并且耦合到处理器的多个存储单元,其中存储单元行包括字线和耦合到字线的所有存储器单元,并且其中列 的存储器单元包括位线和耦合到位线的所有存储器单元。 集成电路还可以包括用于接收第一电源电压的第一电源电压端子,其中提供第一电源电压以为处理器供电,并且其中提供第一电源电压以在多个存储器单元期间供电 多个存储单元的第一访问操作。 集成电路还可以包括用于接收高于第一电源电压的第二电源电压的第二电源电压端子,其中提供第二电源电压以在多个存储器单元的第二访问操作期间为多个存储器单元供电 的记忆细胞。
    • 9. 发明申请
    • Disk blade scrapers for tillage apparatus
    • 盘式刮刀刮土机
    • US20050189126A1
    • 2005-09-01
    • US10788624
    • 2004-02-27
    • Troy CooperMarvin KueblerRickey Gerber
    • Troy CooperMarvin KueblerRickey Gerber
    • A01B15/16
    • A01B15/16
    • A disk blade scraper is used with a tillage implement having rotating disk blades separated by hub spools. In one form, the disk blade scraper has a wide tapered scraper blade positioned very close to the transition of the hub spool and the disk blade. In another form, the disk blade scraper incorporates a round disk having an edge that runs in the transition joint of the disk blade and the hub spool. In yet another form, the disk blade scraper incorporates a round and or square bar that is positioned in such a way that the bar end rubs against this transition joint. In still another form, the disk blade scraper incorporates a flat scraper blade shaped to fit the contour of the backside of the disk blade. The corner of this scraper is positioned very close to the transition joint of the disk blade and the hub spool.
    • 盘式刮刀与具有由轮毂线轴分离的旋转盘片的耕作机构一起使用。 在一种形式中,盘式刮刀具有广泛的锥形刮刀,其非常接近轮毂卷轴和盘片的过渡位置。 在另一种形式中,盘片刮刀结合有圆盘,该圆盘具有在盘片和轮毂卷轴的过渡接头中延伸的边缘。 在另一种形式中,盘片刮刀结合了圆形或方形的杆,其定位成使得杆端部抵靠该过渡接头。 在另一种形式中,盘式刮刀包括形状适合盘片的背面轮廓的平的刮刀。 该刮刀的角部非常靠近盘片和轮毂卷轴的过渡接头。
    • 10. 发明申请
    • Embedded substrate interconnect for underside contact to source and drain regions
    • 用于下侧接触源极和漏极区域的嵌入式衬底互连
    • US20070200173A1
    • 2007-08-30
    • US11356229
    • 2006-02-16
    • Perry PelleyTroy CooperMichael Mendicino
    • Perry PelleyTroy CooperMichael Mendicino
    • H01L27/12
    • H01L29/41733H01L21/84H01L27/12
    • A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.
    • 提供一种半导体图形(10),其包括绝缘体上半导体(SOI)基板,其具有布置在SOI衬底的绝缘层(22)内的导线(16)。 一种用于形成具有这种结构的SOI衬底的方法包括在布置在晶片衬底(12)上方的绝缘层(22)内形成第一导电线(16),并在第一导线的表面上形成硅层(24) 和绝缘层。 提供了一种另外的方法,其包括在SOI衬底上形成晶体管栅极(28),该SOI衬底具有嵌入其中的导电线(16),并且在半导体拓扑图内注入掺杂剂以在上半导体层内形成源区和漏区(30) (24),使得源极和漏极区域之一的下侧与导电线接触。