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1. 发明授权

US4647403A Ion implanted polydiacetylenes 失效
标题翻译：离子注入聚二乙炔
公开(公告)号：US4647403A
公开(公告)日：1987-03-03
申请号：US630484
申请日：1984-07-13
申请人： Boris S. Elman , Daniel J. Sandman , Sukant K. Tripathy , Mrinal K. Thakur
发明人： Boris S. Elman , Daniel J. Sandman , Sukant K. Tripathy , Mrinal K. Thakur
IPC分类号： C08F8/00 , C08L49/00 , H01B1/12 , H01L51/30 , H01B1/06
CPC分类号： H01B1/125 , C08F8/00 , C08L49/00 , H01L51/004
摘要： Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1.times.10.sup.13 ions/cm.sup.2 to about 1.times.10.sup.17 ions/cm.sup.2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.
摘要翻译：公开了通过以约1×10 13离子/ cm 2至约1×10 17离子/ cm 2的注量水平将离子注入取代的聚二乙炔中制备的离子注入的聚二乙炔。离子注入的聚二乙炔表现出不同于未处理的聚二乙炔的电学和/或光学性质。

2. 发明授权

US4698121A Methods for the preparation of oriented thin large-area single crystals of diacetylenes and polydiacetylenes 失效
标题翻译：制备二乙炔和聚二乙炔取向薄的大面积单晶的方法
公开(公告)号：US4698121A
公开(公告)日：1987-10-06
申请号：US705586
申请日：1985-02-26
申请人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
发明人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
IPC分类号： C30B11/00
CPC分类号： C30B11/00 , Y10S117/919
摘要： Methods for preparing thin large-area single crystals of diacetylenes and polydiacetylenes having surface dimensions greater than or equal to about 0.1 mm on all sides and a uniform thickness less than or equal to about 100 microns. The methods involve forming a liquid layer, preferably by melting crystals of a pure diacetylene monomer between two opposed surfaces, one surface being movable with respect to the other; applying pressure to the molten monomer layer disposed between the two surfaces; shearing the molten layer by sliding the movable surface in a single direction that is in a straight line across the molten monomer layer while keeping the molten monomer layer under constant pressure; and crystallizing the shorn molten monomer layer while the shorn molten monomer layer is kept under constant pressure to form a thin large-area single crystal of pure diacetylene monomer. The method for preparing thin large-area single crystals of polydiacetylene further involves exposing a surface of the thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form a thin large-area single crystal of polydiacetylene.
摘要翻译：制备表面尺寸大于或等于约0.1mm的薄壁大面积单面二乙炔和聚二乙炔的方法，均匀厚度小于或等于约100微米。所述方法包括形成液体层，优选通过在两个相对的表面之间熔化纯双乙炔单体的晶体，一个表面可相对于另一表面移动; 向设置在两个表面之间的熔融单体层施加压力; 通过使可动表面沿着熔融单体层的直线的单一方向滑动，同时使熔融单体层保持恒定的压力来剪切熔融层; 并在将熔融的单体层保持在恒定压力下，使已熔融的单体层结晶，形成纯的乙炔单体薄的大面积单晶。制备聚二乙炔薄的大面积单晶的方法还包括将薄的大面积单乙炔单体的表面暴露于紫外线或γ射线以形成薄的大面积单二聚乙炔单晶。

3. 发明授权

US4793893A Methods for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes 失效
标题翻译：制备二乙炔和聚二乙炔的薄大面积单晶的方法
公开(公告)号：US4793893A
公开(公告)日：1988-12-27
申请号：US46499
申请日：1987-05-07
申请人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
发明人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
IPC分类号： C30B7/00
CPC分类号： C30B7/00 , C30B29/54 , C30B29/58 , C30B7/005
摘要： A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula:R--C.tbd.C--C.tbd.C--R'wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation. The method involves forming a liquid layer containing pure diacetylene monomer between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; and crystallizing the liquid layer disposed between the two opposed surfaces while by evaporation the liquid layer is kept under constant pressure to form a thin large-area single crystal of pure diacetylene monomer.A method for preparing thin large-area single crystals of polydiacetylene is also provided. The method further involves exposing a surface of a thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form a thin large-area single crystal of polydiacetylene.
摘要翻译：制备由式：RC 3BOND CC 3BOND CR'表示的双乙炔单体的薄的大面积单晶的方法，其中R和R'是选择的侧基，使得二乙炔单体可通过1,4-加成固相反应暴露于光化辐射。该方法包括在两个相对的表面之间形成含有纯双乙炔单体的液体层; 对设置在两个相对表面之间的液体层施加压力; 并且通过蒸发使配置在两个相对表面之间的液体层结晶，将液体层保持在恒定压力下，形成纯的双乙炔单体的薄的大面积单晶。还提供了制备聚二乙炔薄的大面积单晶的方法。该方法还包括将薄的大面积单乙炔单体的表面暴露于紫外或γ射线以形成薄的大面积单二聚乙炔单晶。

4. 发明授权

US4684434A Method for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes 失效
标题翻译：制备二乙炔和聚二乙炔的薄大面积单晶的方法
公开(公告)号：US4684434A
公开(公告)日：1987-08-04
申请号：US705587
申请日：1985-02-26
申请人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
发明人： Mrinal K. Thakur , Sukant K. Tripathy , Daniel J. Sandman
IPC分类号： C30B7/00
CPC分类号： C30B7/00 , C30B29/54 , C30B29/58 , C30B7/005 , Y10S117/919
摘要： A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula:R--CX.tbd.C--C.tbd.C--R'wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation, is provided. The method involves forming a liquid layer containing pure diacetylene monomer between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; and crystallizing the liquid layer disposed between the two opposed surfaces while the liquid layer is kept under constant pressure to form thin large-area single crystals of pure diacetylene monomer.A method for preparing thin large-area single crystals of polydiacetylene is also provided. The method involves forming a liquid layer containing diacetylene monomer represented by the formula:R--C.tbd.C--C.tbd.C--R'wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation in pure form between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; crystallizing the liquid layer disposed between the two opposed surfaces while the liquid layer is kept under constant pressure to form thin large-area single crystals of pure diacetylene monomer; and exposing a surface of the thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form thin large-area single crystals of polydiacetylene.
摘要翻译：制备由下列通式表示的双乙炔单体的薄的大面积单晶的方法：R-CX 3BOND CC 3BOND CR'其中R和R'是选择的侧基，使得乙炔单体可通过1,4-加成固体提供了暴露于光化辐射的状态反应。该方法包括在两个相对的表面之间形成含有纯双乙炔单体的液体层; 对设置在两个相对表面之间的液体层施加压力; 并且在液体层保持恒定压力的同时使设置在两个相对表面之间的液体层结晶，形成纯的乙炔单体的薄的大面积单晶。还提供了制备聚二乙炔薄的大面积单晶的方法。该方法包括形成含有由下式表示的乙炔单体的液体层：RC 3BOND CC 3BOND CR'，其中R和R'是选择的侧基，使得双乙炔单体可通过暴露于1,4-加成固相反应而可聚合在两个相对表面之间的纯粹形式的光化辐射; 对设置在两个相对表面之间的液体层施加压力; 在液体层保持恒定压力的同时使设置在两个相对表面之间的液体层结晶，形成纯的大面积纯双乙炔单体的单晶; 并将该乙炔单体的薄的大面积单晶的表面暴露于紫外线或γ射线以形成多个大面积的聚二乙炔的大面积单晶。

5. 发明授权

US4783136A Optical waveguides and methods for making same 失效
标题翻译：光波导及其制作方法
公开(公告)号：US4783136A
公开(公告)日：1988-11-08
申请号：US852864
申请日：1986-04-16
申请人： Boris S. Elman , Mrinal K. Thakur , Robert J. Seymour
发明人： Boris S. Elman , Mrinal K. Thakur , Robert J. Seymour
IPC分类号： G02B6/138 , B05D3/06 , G02B6/00 , G02B6/10
CPC分类号： G02B6/138
摘要： An optical waveguide made from a unitary organic film has a polydiacetylene core region and a diacetylene monomer cladding substrate region. The index of refraction of the polydiacetylene core region is greater than the index of refraction of the diacetylene monomer cladding substrate region.The method of fabricating the optical waveguide comprises depositing a diacetylene monomer film on a substrate. The diacetylene monomer film is polymerized by ion beam bombardment to a depth less than the thickness of the film. The depth of the polymerization is controlled by the ion mass and energy of the ion beam applied.
摘要翻译：由单一有机膜制成的光波导具有聚二乙炔核心区域和二乙炔单体包覆基板区域。聚二乙炔核心区域的折射率大于二乙炔单体包覆基板区域的折射率。制造光波导的方法包括在基片上沉积双乙炔单体膜。乙炔单体膜通过离子束轰击聚合至深度小于膜的厚度。聚合的深度由施加的离子束的离子质量和能量控制。

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