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1. 发明授权

US08389992B2 Organic thin film transistor array panel and manufacturing method thereof 失效
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08389992B2
公开(公告)日：2013-03-05
申请号：US13164906
申请日：2011-06-21
申请人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
发明人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
IPC分类号： H01L31/20
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0545 , H01L51/10 , H01L51/5237
摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线，漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

2. 发明授权

US07993958B2 Organic thin film transistor array panel and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07993958B2
公开(公告)日：2011-08-09
申请号：US11151485
申请日：2005-06-13
申请人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
发明人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0545 , H01L51/10 , H01L51/5237
摘要： A method of manufacturing a thin film transistor array panel is provided, the method including: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrode; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，该方法包括：在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在所述数据线，所述漏电极和所述数据线与所述漏电极之间的所述栅绝缘层的露出部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

3. 发明申请

US20050287719A1 Organic thin film transistor array panel and manufacturing method thereof 审中-公开
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050287719A1
公开(公告)日：2005-12-29
申请号：US11143158
申请日：2005-06-02
申请人： Min-Seong Ryu , Tae-Young Choi , Yong-Uk Lee , Woo-Jae Lee , Bo-Sung Kim
发明人： Min-Seong Ryu , Tae-Young Choi , Yong-Uk Lee , Woo-Jae Lee , Bo-Sung Kim
IPC分类号： H01L29/786 , H01L21/00 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/28 , H01L51/00 , H01L51/05
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/283 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0516 , H01L51/0541
摘要： A method of manufacturing a thin film transistor array panel includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; depositing an organic semiconductor layer on the data line, the drain electrode and exposed portions of the gate insulating layer; depositing a protection layer on the organic semiconductor layer; forming a photoresist on the protection layer, the photoresist having positive photosensitivity; etching the protection layer and the organic semiconductor layer using the photoresist as an etch mask; forming a passivation layer on the protection layer, the data line, and the drain electrode, the passivation layer having a contact hole exposing a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode via the contact hole.
摘要翻译：制造薄膜晶体管阵列面板的方法包括：在基板上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线，漏电极和栅极绝缘层的露出部分上沉积有机半导体层; 在所述有机半导体层上沉积保护层; 在保护层上形成光致抗蚀剂，光致抗蚀剂具有正的光敏性; 使用光致抗蚀剂蚀刻保护层和有机半导体层作为蚀刻掩模; 在所述保护层，所述数据线和所述漏电极上形成钝化层，所述钝化层具有暴露所述漏电极的一部分的接触孔; 以及在所述钝化层上形成像素电极，所述像素电极经由所述接触孔与所述漏电极电连接。

4. 发明申请

US20050274953A1 Organic thin film transistor array panel and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050274953A1
公开(公告)日：2005-12-15
申请号：US11151485
申请日：2005-06-13
申请人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
发明人： Bo-Sung Kim , Woo-Jae Lee , Min-Seong Ryu
IPC分类号： H01L29/786 , H01L27/28 , H01L29/10 , H01L51/05 , H01L51/10 , H01L51/52
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0545 , H01L51/10 , H01L51/5237
摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线，漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

5. 发明授权

US07842538B2 Organic thin film transistor array and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US07842538B2
公开(公告)日：2010-11-30
申请号：US12015297
申请日：2008-01-16
申请人： Yong-Uk Lee , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
发明人： Yong-Uk Lee , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L27/3272 , H01L27/3274 , H01L51/0036 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0078 , H01L51/0545
摘要： An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.
摘要翻译：提供有机薄膜晶体管阵列面板，其包括：基板; 数据线，形成在所述基板上并且包括源电极; 漏极，形成在基板上并与数据线分离; 设置在源电极和漏电极上的有机半导体; 形成在有机半导体上的栅极绝缘体; 栅极线，包括设置在栅极绝缘体上的栅电极; 钝化层，形成在所述栅极线上，并且在所述漏极上具有第一接触孔; 通过所述第一接触孔与所述漏电极连接的像素电极; 以及设置在所述有机半导体下方的不透明遮光构件。

6. 发明申请

US20080131986A1 ORGANIC THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US20080131986A1
公开(公告)日：2008-06-05
申请号：US12015297
申请日：2008-01-16
申请人： YONG UK LEE , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
发明人： YONG UK LEE , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
IPC分类号： H01L21/70
CPC分类号： H01L27/283 , H01L27/3272 , H01L27/3274 , H01L51/0036 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0078 , H01L51/0545
摘要： An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.
摘要翻译：提供有机薄膜晶体管阵列面板，其包括：基板; 数据线，形成在所述基板上并且包括源电极; 漏极，形成在基板上并与数据线分离; 设置在源电极和漏电极上的有机半导体; 形成在有机半导体上的栅极绝缘体; 栅极线，包括设置在栅极绝缘体上的栅电极; 钝化层，形成在所述栅极线上，并且在所述漏极上具有第一接触孔; 通过所述第一接触孔与所述漏电极连接的像素电极; 以及设置在所述有机半导体下方的不透明遮光构件。

7. 发明授权

US07572667B2 Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same 失效
标题翻译：形成有机半导体图案的方法和使用该有机半导体图案的有机薄膜晶体管的制造方法
公开(公告)号：US07572667B2
公开(公告)日：2009-08-11
申请号：US11336028
申请日：2006-01-20
申请人： Min-Seong Ryu , Bo-Sung Kim , Yong-Uk Lee
发明人： Min-Seong Ryu , Bo-Sung Kim , Yong-Uk Lee
IPC分类号： H01L21/40
CPC分类号： H01L51/0013 , H01L51/0014 , H01L51/003 , Y10T156/137
摘要： A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.
摘要翻译：提供一种形成有机半导体图案的方法。在第一基板上形成图案。在图案上涂布粘合剂以形成粘合剂图案。在第二基板上形成有机半导体层。将第二衬底与第一衬底组合以从第二衬底去除附着到图案的有机半导体层的一部分以形成有机半导体图案。

8. 发明授权

US08319223B2 Thin film transistor array panel using organic semiconductor and a method for manufacturing the same 有权
标题翻译：使用有机半导体的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08319223B2
公开(公告)日：2012-11-27
申请号：US12971872
申请日：2010-12-17
申请人： Bo Sung Kim , Mun-Pyo Hong , Min-Seong Ryu , Yong-Uk Lee
发明人： Bo Sung Kim , Mun-Pyo Hong , Min-Seong Ryu , Yong-Uk Lee
IPC分类号： H01L29/76
CPC分类号： H01L51/0545 , H01L51/0021
摘要： The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.
摘要翻译：本发明公开了一种有机薄膜晶体管，有机薄膜晶体管阵列基板和有机薄膜晶体管显示器。本发明公开了适用于大屏幕显示器的有机材料。本发明还公开了制造这种有机薄膜晶体管，有机薄膜晶体管阵列基板和有机薄膜晶体管显示器的结构和方法。

9. 发明授权

US07259392B2 Organic thin film transistor array panel and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07259392B2
公开(公告)日：2007-08-21
申请号：US11186233
申请日：2005-07-20
申请人： Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
发明人： Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L27/3244
摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes: a substrate; a data line disposed on the substrate; an interlayer insulating layer disposed on the data line; a gate line disposed on the interlayer insulating layer and including a gate electrode; a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line; a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole; a second electrode disposed opposite the first electrode with respect to the gate electrode; an organic semiconductor disposed on the first and the second electrodes and contacting the first and the second electrodes; and a passivation member disposed on the organic semiconductor.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，所述方法包括：基板; 设置在所述基板上的数据线; 设置在所述数据线上的层间绝缘层; 设置在所述层间绝缘层上并包括栅电极的栅极线; 设置在所述栅极线和所述层间绝缘层上的栅极绝缘层，所述栅极绝缘层和所述层间绝缘膜具有暴露所述数据线的接触孔; 第一电极，设置在所述栅极绝缘层上并通过所述接触孔连接到所述数据线; 相对于所述栅电极与所述第一电极相对设置的第二电极; 布置在第一和第二电极上并与第一和第二电极接触的有机半导体; 以及设置在所述有机半导体上的钝化部件。

10. 发明申请

US20060131586A1 Organic thin film transistor array panel and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060131586A1
公开(公告)日：2006-06-22
申请号：US11186233
申请日：2005-07-20
申请人： Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
发明人： Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L27/283 , H01L27/3244
摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes: a substrate; a data line disposed on the substrate; an interlayer insulating layer disposed on the data line; a gate line disposed on the interlayer insulating layer and including a gate electrode; a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line; a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole; a second electrode disposed opposite the first electrode with respect to the gate electrode; an organic semiconductor disposed on the first and the second electrodes and contacting the first and the second electrodes; and a passivation member disposed on the organic semiconductor.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，所述方法包括：基板; 设置在所述基板上的数据线; 设置在数据线上的层间绝缘层; 设置在所述层间绝缘层上并包括栅电极的栅极线; 设置在所述栅极线和所述层间绝缘层上的栅极绝缘层，所述栅极绝缘层和所述层间绝缘膜具有暴露所述数据线的接触孔; 第一电极，设置在所述栅极绝缘层上并通过所述接触孔连接到所述数据线; 相对于所述栅电极与所述第一电极相对设置的第二电极; 布置在第一和第二电极上并与第一和第二电极接触的有机半导体; 以及设置在所述有机半导体上的钝化部件。

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