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1. 发明授权

US09640767B1 Electronic device including phosphine oxide functionalized triazine derivative and novel phosphine oxide functionalized triazine derivative 有权
公开(公告)号：US09640767B1
公开(公告)日：2017-05-02
申请号：US15169119
申请日：2016-05-31
申请人： PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
发明人： Sung Ho Jin
IPC分类号： C07D251/30 , C07F9/6521 , H01L51/00 , H01L51/42 , H01L51/10
CPC分类号： H01L51/0067 , C07D251/30 , C07F9/6521 , C07F9/65586 , H01L51/0036 , H01L51/0037 , H01L51/0043 , H01L51/0047 , H01L51/0558 , H01L51/10 , H01L51/424 , H01L51/4246 , H01L51/4253 , Y02E10/549
摘要： Provided are an electronic device including a novel structured interface material capable of improving interface properties of the electronic device, and the novel interface material, and more specifically, an electronic device including the interface material of the present disclosure to allow easy extraction and injection of electrons, thereby exhibiting excellent interface properties, and a phosphine oxide functionalized triazine derivative having a structure in which an electron acceptor phosphine oxide group is substituted in 1,3,5-triazine-based skeleton, which is the interface material.

2. 发明申请

US20170084670A1 Light-Emitting Device and Display Device 审中-公开
公开(公告)号：US20170084670A1
公开(公告)日：2017-03-23
申请号：US15280154
申请日：2016-09-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： SATOSHI SEO , TOSHIKI SASAKI , NOBUHARU OSHAWA , TAKAHIRO USHIKUBO , SHUNPEI YAMAZAKI
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L27/322 , H01L27/15 , H01L27/3209 , H01L33/405 , H01L33/44 , H01L51/10 , H01L51/44 , H01L51/5016 , H01L51/5218 , H01L51/5221 , H01L51/5265
摘要： A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

3. 发明申请

US20150333282A1 METHODS AND DEVICES FOR SILICON INTEGRATED VERTICALLY ALIGNED FIELD EFFECT TRANSISTORS 有权
标题翻译：硅集成垂直对准场效应晶体管的方法与器件
公开(公告)号：US20150333282A1
公开(公告)日：2015-11-19
申请号：US14710904
申请日：2015-05-13
申请人： King Abdullah University of Science and Technology
发明人： Jingqi Li
IPC分类号： H01L51/05 , H01L51/10
CPC分类号： H01L51/057 , H01L51/0048 , H01L51/0558 , H01L51/10 , H01L51/105 , H01L2251/301
摘要： Embodiments of the present disclosure provide for vertically aligned CNTFET, methods of making vertically aligned CNTFET, methods of using vertically aligned CNTFET, and the like.
摘要翻译：本公开的实施例提供垂直对准的CNTFET，制造垂直对准的CNTFET的方法，使用垂直对准的CNTFET的方法等。

4. 发明申请

US20150214273A1 Light-Emitting Device and Display Device 审中-公开
标题翻译：发光装置和显示装置
公开(公告)号：US20150214273A1
公开(公告)日：2015-07-30
申请号：US14621947
申请日：2015-02-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Satoshi Seo , Toshiki Sasaki , Nobuharu Ohsawa , Takahiro Ushikubo , Shunpei Yamazaki
IPC分类号： H01L27/15 , H01L51/52 , H01L33/40 , H01L27/32 , H01L33/44
CPC分类号： H01L27/322 , H01L27/15 , H01L27/3209 , H01L33/405 , H01L33/44 , H01L51/10 , H01L51/44 , H01L51/5016 , H01L51/5218 , H01L51/5221 , H01L51/5265
摘要： A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.
摘要翻译：提供了一种以高生产率制造显示装置的技术。另外，提供了高纯度的高分辨率显示装置。通过调整具有反射性的电极和发光层之间的光路长度通过通过滤色器层的光的波长范围的中心波长，提供高色纯度的高分辨率显示装置，而不执行选择性沉积发光层。在发光元件中堆叠发射不同颜色的光的多个发光层。发光层越靠近具有反射性的电极，从发光层发射的光的波长越短。

5. 发明申请

US20140363919A1 SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US20140363919A1
公开(公告)日：2014-12-11
申请号：US14470734
申请日：2014-08-27
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/05 , H01L27/28 , H01L51/10
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，使有机绝缘材料与有机半导体材料。

6. 发明授权

US08866132B2 Semiconductor device and electronic unit 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US08866132B2
公开(公告)日：2014-10-21
申请号：US13671588
申请日：2012-11-08
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/00 , H01L27/32 , H01L27/28
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，使有机绝缘材料与有机半导体材料。

7. 发明申请

US20140134454A1 MULTI-LAYER COMPOSITE WITH METAL-ORGANIC LAYER 审中-公开
标题翻译：多层复合材料与金属有机层
公开(公告)号：US20140134454A1
公开(公告)日：2014-05-15
申请号：US14081177
申请日：2013-11-15
申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE , HERAEUS PRECIOUS METALS GMBH & CO. KG
发明人： Herbert FUCHS , Hyung Seok HA , Kerstin TIMTER , Jeongno LEE , Bumjoo LEE , Chul Jong HAN , Seunghyun LEE
IPC分类号： H01B5/00 , H01L51/10 , H01L51/52
CPC分类号： H01B5/00 , C09D11/03 , C09D11/52 , C23C18/08 , H01L51/0022 , H01L51/10 , H01L51/52 , H01L51/5221 , H01L2924/0002 , Y10T428/12528 , Y10T428/24355 , Y10T428/249995 , Y10T428/31663 , H01L2924/00
摘要： A multi-layer composite precursor is provided comprising a substrate, wherein the substrate comprises a light emitting organic compound, a first surface, and a second surface, wherein the second surface is superimposed by a transparent electrically conducting layer, a liquid phase superimposing at least a part of the first surface comprising a metal-organic compound, wherein the metal-organic compound comprises an organic moiety, wherein the organic moiety comprises a C═O group; and wherein the liquid phase further comprises a first silicon compound, wherein the first silicon compound comprises at least one carbon atom and at least one nitrogen atom.
摘要翻译：提供了一种多层复合前体，其包括基底，其中基底包括发光有机化合物，第一表面和第二表面，其中第二表面由透明导电层叠加，液相至少叠加所述第一表面的一部分包含金属 - 有机化合物，其中所述金属 - 有机化合物包含有机部分，其中所述有机部分包含C = O基团; 并且其中所述液相还包含第一硅化合物，其中所述第一硅化合物包含至少一个碳原子和至少一个氮原子。

8. 发明申请

US20130119383A1 SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT 有权
标题翻译：半导体器件和电子单元
公开(公告)号：US20130119383A1
公开(公告)日：2013-05-16
申请号：US13671588
申请日：2012-11-08
申请人： Sony Corporation
发明人： Akihiro Nomoto
IPC分类号： H01L51/10 , H01L29/786 , H01L21/336
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3258 , H01L51/10
摘要： Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
摘要翻译：用于形成薄膜晶体管（TFT）的薄膜晶体管和技术。在一些实施例中，提供了一种形成TFT的方法，包括形成包含有机半导体材料的TFT的体区，以及形成包含有机绝缘材料的保护层。形成保护层包括使TFT的体区与包含有机绝缘材料的溶液接触。有机绝缘材料是当溶液接触有机半导体材料时与有机半导体材料相分离的材料。在其它实施例中，提供了一种包括TFT的装置。 TFT包括主体区域，包括有机半导体材料和与体区接触的保护层，并且包括有机绝缘材料，当有机绝缘材料的溶液与有机半导体材料接触时，有机绝缘材料使有机绝缘材料与有机半导体材料。

9. 发明申请

US20110248255A1 ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 失效
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US20110248255A1
公开(公告)日：2011-10-13
申请号：US13164906
申请日：2011-06-21
申请人： Bo-Sung KIM , Woo-Jae LEE , Min-Seong RYU
发明人： Bo-Sung KIM , Woo-Jae LEE , Min-Seong RYU
IPC分类号： H01L27/28
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0545 , H01L51/10 , H01L51/5237
摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线，漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

10. 发明申请

US20080121725A1 Memory device and semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20080121725A1
公开(公告)日：2008-05-29
申请号：US11976788
申请日：2007-10-29
申请人： Ryoji Nomura
发明人： Ryoji Nomura
IPC分类号： G06K19/06 , H01L51/10 , H01L51/40
CPC分类号： H01L51/10 , B82Y10/00 , G11C13/0014 , H01L27/285 , H01L51/0591 , H01L51/0595 , H01L51/107
摘要： It is an object to provide a flexible semiconductor device bearing a memory device with a highly reliable storage function, where the memory device comprises a layer containing an organic compound. Specifically, the memory device has a memory element which comprises a layer including an organic compound between a pair of electrodes and a sealing layer formed over the memory element, and a moisture absorbing material is contained in the sealing layer. As the moisture absorbing material, a particle of molten silica, crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, zeolite, an oxide of an alkaline earth metal, sulfate or a high water-absorbing polymer can be used.
摘要翻译：本发明的目的是提供具有高可靠性存储功能的存储器件的柔性半导体器件，其中存储器件包括含有有机化合物的层。具体而言，存储器件具有包括一对电极之间的有机化合物层和形成在存储元件上方的密封层的层的存储元件，并且在密封层中包含吸湿材料。作为吸湿材料，可以使用熔融二氧化硅，结晶二氧化硅，氧化铝，氮化硅，氮化铝，氮化硼，沸石，碱土金属的氧化物，硫酸盐或高吸水性聚合物的颗粒。

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