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1. 发明申请

US20070261636A1 RECIRCULATION AND REUSE OF DUMMY DISPENSED RESIST 有权
标题翻译：回收和再利用DUMMY DISPEDED RESIST
公开(公告)号：US20070261636A1
公开(公告)日：2007-11-15
申请号：US11615080
申请日：2006-12-22
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi Phan , Ursula Quinto , Michael Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi Phan , Ursula Quinto , Michael Templeton
IPC分类号： B05B1/28
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译：本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。虚拟分配的抗蚀剂返回到被采集的储存器。在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。来自分配头的抗蚀剂的流动在分配头保持抗干燥。通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

2. 发明申请

US20050164133A1 Inverse resist coating process 有权
标题翻译：抗反射涂层工艺
公开(公告)号：US20050164133A1
公开(公告)日：2005-07-28
申请号：US11087011
申请日：2005-03-22
申请人： Bharath Rangarajan , Michael Templeton , Ramkumar Subramanian
发明人： Bharath Rangarajan , Michael Templeton , Ramkumar Subramanian
IPC分类号： G03F7/40 , H01L21/027 , H01L21/033 , G03F7/00
CPC分类号： H01L21/0331 , G03F7/40 , H01L21/0272 , H01L21/0274
摘要： The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.
摘要翻译：本发明提供了形成图案化的第一涂层的逆（照相负）的系统和工艺。图案化的第一涂层通常由抗蚀剂提供。在对第一涂层进行图案化之后，在其上提供第二材料的涂层。在适当的情况下去除第二涂层的最上层以暴露图案化的第一涂层。随后去除图案化的第一涂层，留下作为第一涂层图案的相反图案的图案形式的第二涂层材料。可以用第三涂层材料重复该过程，以以不同的材料再现第一涂层的图案。在施加第二涂层之前，可以通过蚀刻修整图案化的第一涂层，从而减小特征尺寸并产生亚光刻特征。除了提供亚光刻特征之外，本发明还提供了一种简单，有效和高保真的获得反涂层图案的方法。

3. 发明授权

US6117618A Carbonized antireflective coating produced by spin-on polymer material 失效
标题翻译：通过旋涂聚合物材料生产的碳化抗反射涂层
公开(公告)号：US6117618A
公开(公告)日：2000-09-12
申请号：US185683
申请日：1998-11-04
申请人： Sanjay Yedur , Bhanwar Singh , Bharath Rangarajan , Michael Templeton
发明人： Sanjay Yedur , Bhanwar Singh , Bharath Rangarajan , Michael Templeton
IPC分类号： G03F7/09 , H01L21/027 , H01L21/3213 , G03C5/00
CPC分类号： H01L21/0276 , G03F7/091 , H01L21/32137 , Y10S430/143 , Y10S430/146 , Y10S430/151
摘要： In one embodiment, the present invention relates to a method of making a carbonized antireflection coating involving the steps of depositing a polymer layer on a semiconductor substrate; and carbonizing at least a portion of the polymer layer in an inert atmosphere to provide the carbonized antireflection coating. In another embodiment, the present invention relates to a method of improving critical dimensional control during lithography, involving the steps of providing a semiconductor substrate; depositing a polymer layer on the semiconductor substrate; carbonizing at least a portion of the polymer layer in an inert atmosphere to provide a carbonized antireflection coating; depositing a photoresist over the carbonized antireflection coating; and patterning the photoresist.
摘要翻译：在一个实施方案中，本发明涉及一种制备碳化抗反射涂层的方法，包括以下步骤：在半导体衬底上沉积聚合物层; 并在惰性气氛中将聚合物层的至少一部分碳化，以提供碳化的抗反射涂层。在另一个实施例中，本发明涉及在光刻期间改进临界尺寸控制的方法，包括提供半导体衬底的步骤; 在半导体衬底上沉积聚合物层; 在惰性气氛中碳化聚合物层的至少一部分以提供碳化抗反射涂层; 在碳化抗反射涂层上沉积光致抗蚀剂; 并图案化光致抗蚀剂。

4. 发明授权

US06455332B1 Methodology to mitigate electron beam induced charge dissipation on polysilicon fine patterning 失效
标题翻译：减少多晶硅精细图案化后电子束感应电荷耗散的方法
公开(公告)号：US06455332B1
公开(公告)日：2002-09-24
申请号：US09564406
申请日：2000-05-01
申请人： Bhanwar Singh , Michael Templeton
发明人： Bhanwar Singh , Michael Templeton
IPC分类号： H01L2100
CPC分类号： H01L22/34
摘要： A method of making and using a reference wafer and a metrology system to calibrate tools in a photolithographic system. The reference wafer includes a silicon substrate, a dielectric or insulating layer disposed above the silicon substrate and a pattern disposed above the insulating layer. The pattern is coupled to the silicon substrate and the silicon substrate acts as a ground for the pattern. As a result, charge buildup on the pattern is mitigated since excess charge is dissipated into the silicon substrate.
摘要翻译：制造和使用参考晶片和计量系统来校准光刻系统中的工具的方法。参考晶片包括硅衬底，设置在硅衬底上方的电介质层或绝缘层以及设置在绝缘层之上的图案。该图案耦合到硅衬底，并且硅衬底用作图案的接地。结果，由于过量的电荷消散到硅衬底中，因此减轻了图案上的电荷积累。

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