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1. 发明授权

US08415720B2 Vertically pinched junction field effect transistor 有权
标题翻译：垂直夹紧结场效应晶体管
公开(公告)号：US08415720B2
公开(公告)日：2013-04-09
申请号：US13172036
申请日：2011-06-29
申请人： Badih El-Kareh , Kyu Ok Lee , Joo Hyung Kim , Jung Joo Kim
发明人： Badih El-Kareh , Kyu Ok Lee , Joo Hyung Kim , Jung Joo Kim
IPC分类号： H01L29/66
CPC分类号： H01L29/66901 , H01L29/8086
摘要： A vertical junction field-effect transistor in a CMOS base-technology. The vertical junction field-effect transistor includes a semiconductor substrate having a source region and a drain region, a main-channel region formed between the source region and the drain region, a well region formed on the main-channel region between the source region and the drain region, vertical pinch-off regions formed at both source and drain ends or only on the source-end of the well region on the main-channel region in the source region and the drain region respectively, a source contact on the vertical pinch-off region in the source region, a drain contact on the vertical pinch-off region in the drain region, a gate contact on the well region between the source contact and the drain contact and shallow trench isolations formed on the well region.
摘要翻译： CMOS基础技术中的垂直结型场效应晶体管。垂直结场效应晶体管包括具有源极区和漏极区的半导体衬底，形成在源区和漏区之间的主沟道区，形成在源极区和源极区之间的主沟道区上的阱区，在源极区域和漏极区域的主沟道区域上分别形成在源极和漏极端部处或仅在阱区域的源极端处的垂直夹断区域，垂直夹点处的源极接触源极区域中的漏极区域，漏极区域中的垂直夹断区域上的漏极接触，源极接触和漏极接触之间的阱区域上的栅极接触以及在阱区域上形成的浅沟槽隔离。

2. 发明授权

US11772278B2 End effector measuring module and end effector monitoring apparatus using the same 有权
公开(公告)号：US11772278B2
公开(公告)日：2023-10-03
申请号：US17306859
申请日：2021-05-03
申请人： Kyu Ok Lee
发明人： Kyu Ok Lee , Jin Hee Lim
IPC分类号： H01L21/67 , B25J13/08 , B25J9/16 , B25J11/00
CPC分类号： B25J13/088 , B25J9/1664 , B25J11/0095 , B25J13/087
摘要： Provided are an end effect measuring module and an end effect monitoring apparatus using the same. The end effect measuring module is installed at through holes formed between an Equipment Front End Module (EFEM) equipped with an end effector and a semiconductor processing apparatus for processing a wafer and measuring the position according to the movement path of a target passing the through holes. The measurement target is the end effector, and a sensing unit measures whether or not the end effector is shifted and changed in direction. A light receiving unit of the sensing unit outputs an electrical signal that is higher or lower than a reference value in response to shifting of the end effector, or outputs an electrical signal increasing or decreasing along a time axis in response to a directional change of the end effector.

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