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    • 1. 发明授权
    • Method for fabricating a photovoltaic element with stabilised efficiency
    • 制造稳定效率的光伏元件的方法
    • US08263176B2
    • 2012-09-11
    • US12225337
    • 2007-03-21
    • Axel HerguthGunnar SchubertMartin KäsGiso HahnIhor Melnyk
    • Axel HerguthGunnar SchubertMartin KäsGiso HahnIhor Melnyk
    • B05D5/06
    • H01L31/1864H01L31/1804Y02E10/547Y02P70/521
    • A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
    • 提出了一种制造具有稳定效率的光伏元件的方法。 该方法包括以下步骤:制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。 稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃,优选为90℃,更优选为130℃,甚至更优选为160℃的可选温度范围内 并且上限温度为230℃,优选为210℃,更优选为190℃,甚至更优选为180℃,并且在处理时间内在硅衬底中产生过量的少数载流子,例如, 通过照射衬底或施加外部电压。 该方法可用于制造光电元件,例如, 太阳能电池或太阳能组件,其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。
    • 2. 发明申请
    • Method for Fabricating a Photovolataic Element with Stabilised Efficiency
    • 用稳定效率制造光电元件的方法
    • US20100243036A1
    • 2010-09-30
    • US12225337
    • 2007-03-21
    • Axel HerguthGunnar SchubertMartin KäsGiso HahnIhor Melnyk
    • Axel HerguthGunnar SchubertMartin KäsGiso HahnIhor Melnyk
    • H01L31/0256H01L21/56H01L21/26
    • H01L31/1864H01L31/1804Y02E10/547Y02P70/521
    • A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilisation treatment step.
    • 提出了一种制造具有稳定效率的光伏元件的方法。 该方法包括以下步骤:制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。 稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃,优选为90℃,更优选为130℃,甚至更优选为160℃的可选温度范围内 并且上限温度为230℃,优选为210℃,更优选为190℃,甚至更优选为180℃,并且在处理时间内在硅衬底中产生过量的少数载流子,例如, 通过照射衬底或施加外部电压。 该方法可用于制造光电元件,例如, 太阳能电池或太阳能组件,其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。
    • 3. 发明申请
    • DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY
    • 用于制造具有稳定效率的光伏元件的装置
    • US20110162716A1
    • 2011-07-07
    • US12971232
    • 2010-12-17
    • Axel HerguthGunnar SchubertGiso HahnIhor MelnykMartin Käs
    • Axel HerguthGunnar SchubertGiso HahnIhor MelnykMartin Käs
    • H01L31/0264H01L31/18H05B3/68
    • H01L31/1864H01L31/1804Y02E10/547Y02P70/521
    • A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.
    • 提出了一种用于制造具有稳定效率的光电元件的方法和装置。 该方法包括以下步骤:制备硼掺杂的含氧硅衬底; 在所述硅衬底的表面上形成发射极层; 和稳定化处理步骤。 稳定化处理步骤包括将处理时间内的基板的温度保持在温度下限为50℃,优选为90℃,更优选为130℃,甚至更优选为160℃的可选温度范围内 并且上限温度为230℃,优选为210℃,更优选为190℃,甚至更优选为180℃,并且在处理时间内在硅衬底中产生过量的少数载流子,例如, 通过照射衬底或施加外部电压。 该方法可用于制造光电元件,例如, 太阳能电池或太阳能组件,其效率比在没有稳定化处理步骤的光电元件的值高的情况下是稳定的。