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    • 10. 发明授权
    • High tilt implant angle performance using in-axis tilt
    • 使用轴内倾斜的高倾斜植入角度性能
    • US07820985B2
    • 2010-10-26
    • US12005991
    • 2007-12-28
    • Atul GuptaJoseph C. Olson
    • Atul GuptaJoseph C. Olson
    • G21K5/08G21K5/10
    • G21K5/10H01L21/68764
    • The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.
    • 本发明包括一种用于高倾斜角度植入的方法,其角度精度以前不能实现。 具有宽度和高度尺寸的离子束由多个单独的子束组成。 这些子束通常在这两个维度之一中显示更高程度的平行度。 因此,为了最小化角度误差,工件围绕基本垂直于具有较高并行度的尺寸的轴线倾斜。 然后以高倾斜角植入工件,并围绕与工件表面正交的线旋转。 可以重复该过程,直到在所有所需区域中执行高倾斜植入。