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1. 发明授权

US08455847B2 Mask health monitor using a faraday probe 失效
标题翻译：面罩健康监护仪使用法拉第探头
公开(公告)号：US08455847B2
公开(公告)日：2013-06-04
申请号：US13428682
申请日：2012-03-23
申请人： Benjamin B. Riordon , Nicholas P. T. Bateman , William T. Weaver , Russell J. Low
发明人： Benjamin B. Riordon , Nicholas P. T. Bateman , William T. Weaver , Russell J. Low
IPC分类号： H01J37/317 , H01J37/244 , H01J3/07
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译：在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。离子电流测量装置通过离子束平移。使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

2. 发明授权

US08008176B2 Masked ion implant with fast-slow scan 有权
标题翻译：具有快速扫描的掩蔽离子植入物
公开(公告)号：US08008176B2
公开(公告)日：2011-08-30
申请号：US12853698
申请日：2010-08-10
申请人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

3. 发明授权

US07888249B2 Use of chained implants in solar cell 有权
标题翻译：在太阳能电池中使用链式植入物
公开(公告)号：US07888249B2
公开(公告)日：2011-02-15
申请号：US12760227
申请日：2010-04-14
申请人： Nicholas P. T. Bateman , Atul Gupta , Paul Sullivan , Paul J. Murphy
发明人： Nicholas P. T. Bateman , Atul Gupta , Paul Sullivan , Paul J. Murphy
IPC分类号： H01L21/425
CPC分类号： H01L31/18 , H01J37/3171 , H01J37/32412 , H01J2237/0827 , H01J2237/202 , H01J2237/31711 , H01L21/26513 , H01L21/266 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
摘要翻译：太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

4. 发明授权

US08895325B2 System and method for aligning substrates for multiple implants 有权
标题翻译：用于对准多个植入物的基底的系统和方法
公开(公告)号：US08895325B2
公开(公告)日：2014-11-25
申请号：US13458441
申请日：2012-04-27
申请人： John W. Graff , Benjamin B. Riordon , Nicholas P. T. Bateman
发明人： John W. Graff , Benjamin B. Riordon , Nicholas P. T. Bateman
IPC分类号： H01L21/00 , B05C11/00
CPC分类号： H01J37/3171 , H01J37/3045 , H01J2237/31711 , H01L21/266
摘要： A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.
摘要翻译：公开了用于在连续工艺步骤期间对准衬底的系统和方法，例如离子注入步骤。在衬底上形成植入区域。在植入之后，获得植入区域的图像，并且已知关系到至少一个植入区域的基底上提供了基准。在基板上进行热退火处理，使得注入区域不再可见，但基准仍然可见。基准的位置可以用于下游处理步骤，以便在注入区域上正确对准图案掩模。在进行基板的任何离子注入之前，基准也可以应用于基板。基准面相对于衬底的边缘或拐角的位置可用于在下游工艺步骤期间对准。描述和要求保护其他实施例。

5. 发明授权

US08461553B2 Masked ion implant with fast-slow scan 失效
标题翻译：具有快速扫描的掩蔽离子植入物
公开(公告)号：US08461553B2
公开(公告)日：2013-06-11
申请号：US13188837
申请日：2011-07-22
申请人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01J37/317 , H01J37/244 , H01J3/07 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

6. 发明授权

US08372737B1 Use of a shadow mask and a soft mask for aligned implants in solar cells 失效
标题翻译：在太阳能电池中使用荫罩和软面罩对准植入物
公开(公告)号：US08372737B1
公开(公告)日：2013-02-12
申请号：US13170792
申请日：2011-06-28
申请人： Nicholas P. T. Bateman , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P. T. Bateman , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of implanting a solar cell is disclosed. A substrate is coated with a soft mask material. A shadow mask is used to perform a pattern ion implant and to set the soft mask material. After the soft mask material is set, the mask is removed and a blanket implant is performed.
摘要翻译：公开了一种改进的植入太阳能电池的方法。用软掩模材料涂覆基材。阴影掩模用于执行图案离子注入并设置软掩模材料。在软掩模材料被设置之后，去除掩模并执行覆盖植入。

7. 发明授权

US08153456B2 Bifacial solar cell using ion implantation 有权
标题翻译：双极太阳能电池使用离子注入
公开(公告)号：US08153456B2
公开(公告)日：2012-04-10
申请号：US13010303
申请日：2011-01-20
申请人： Atul Gupta , Nicholas P. T. Bateman
发明人： Atul Gupta , Nicholas P. T. Bateman
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
摘要翻译：公开了一种改进的双面太阳能电池。在一些实施例中，前侧包括n型场表面场，而后侧包括p型发射器。在其他实施例中，p型发射器在前侧。为了使多数载流子的扩散最大化并降低接触和衬底之间的串联电阻，金属接触点下方的区域更加重掺杂。因此，在至少一个FSF或发射极中产生较高掺杂浓度的区域。这些区域是通过使用选择性植入物产生的，这可以在双面太阳能电池的一侧或两侧进行，以提高效率。

8. 发明授权

US07816153B2 Method and apparatus for producing a dislocation-free crystalline sheet 有权
标题翻译：用于生产无位错结晶片的方法和装置
公开(公告)号：US07816153B2
公开(公告)日：2010-10-19
申请号：US12478513
申请日：2009-06-04
申请人： Peter L. Kellerman , Frank Sinclair , Frederick Carlson , Nicholas P. T. Bateman , Robert J. Mitchell
发明人： Peter L. Kellerman , Frank Sinclair , Frederick Carlson , Nicholas P. T. Bateman , Robert J. Mitchell
IPC分类号： H01L21/00
CPC分类号： C30B11/003 , C30B11/001 , C30B28/06 , C30B29/06 , C30B29/60
摘要： A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.
摘要翻译：可以由熔体形成无位错的片材。使用冷却板在材料的熔体上形成具有第一宽度的材料片。这张纸有位错。片材相对于冷却板输送，并且位错迁移到片材的边缘。片材的第一宽度通过冷却板增加到第二宽度。片材在第二个宽度上不具有位错。在一种情况下，冷却板可以具有两种不同宽度的形状。冷却板可以具有在不同温度下操作的段，以在另一种情况下增加片材的宽度。片材可以相对于冷却板拉动或流动。

9. 发明授权

US08569157B2 Stepped masking for patterned implantation 有权
标题翻译：步进屏蔽图案植入
公开(公告)号：US08569157B2
公开(公告)日：2013-10-29
申请号：US13442571
申请日：2012-04-09
申请人： Benjamin B. Riordon , Nicholas P. T. Bateman , Charles T. Carlson
发明人： Benjamin B. Riordon , Nicholas P. T. Bateman , Charles T. Carlson
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01J37/3172 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
摘要翻译：公开了一种移动掩模以执行衬底的图案植入的改进方法。掩模具有多个孔，并且被放置在离子源和基底之间。在将衬底暴露于离子束之后，掩模被引导到相对于衬底的新位置，并且执行随后的注入步骤。通过选择孔径尺寸和形状，指数距离和植入步骤的数量，可以产生各种种植体图案。在一些实施例中，注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。在一些实施例中，植入模式包括重掺杂区域格栅。在其它实施例中，植入图案适用于汇流条结构。

10. 发明授权

US08173527B2 Stepped masking for patterned implantation 失效
标题翻译：步进屏蔽图案植入
公开(公告)号：US08173527B2
公开(公告)日：2012-05-08
申请号：US12906369
申请日：2010-10-18
申请人： Benjamin B. Riordon , Nicholas P. T. Bateman , Charles T. Carlson
发明人： Benjamin B. Riordon , Nicholas P. T. Bateman , Charles T. Carlson
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01J37/3172 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
摘要翻译：公开了一种移动掩模以执行衬底的图案植入的改进方法。掩模具有多个孔，并且被放置在离子源和基底之间。在将衬底暴露于离子束之后，掩模被引导到相对于衬底的新位置，并且执行随后的注入步骤。通过选择孔径尺寸和形状，指数距离和植入步骤的数量，可以产生各种种植体图案。在一些实施例中，注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。在一些实施例中，植入模式包括重掺杂区域格栅。在其它实施例中，植入图案适用于汇流条结构。

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