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1. 发明申请

US20110272602A1 Masked Ion Implant with Fast-Slow Scan 失效
标题翻译：具有快速扫描的掩蔽离子植入物
公开(公告)号：US20110272602A1
公开(公告)日：2011-11-10
申请号：US13188837
申请日：2011-07-22
申请人： Nicholas P.T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P.T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

2. 发明授权

US08008176B2 Masked ion implant with fast-slow scan 有权
标题翻译：具有快速扫描的掩蔽离子植入物
公开(公告)号：US08008176B2
公开(公告)日：2011-08-30
申请号：US12853698
申请日：2010-08-10
申请人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

3. 发明申请

US20090303306A1 TECHNIQUES FOR CHANGING TEMPERATURE OF A PLATEN 有权
标题翻译：改变钢板温度的技术
公开(公告)号：US20090303306A1
公开(公告)日：2009-12-10
申请号：US12132939
申请日：2008-06-04
申请人： Roger B. Fish , Samuel M. Barsky , Scott C. Holden , Arthur P. Riaf , Steven M. Anella
发明人： Roger B. Fish , Samuel M. Barsky , Scott C. Holden , Arthur P. Riaf , Steven M. Anella
IPC分类号： B41J2/315
CPC分类号： H01L21/26513 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01L21/26593
摘要： Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.
摘要翻译：公开了改变压板温度的技术。在一个特定的示例性实施例中，技术可以被实现为用于改变包括压板的压板和包括一个或多个热流体通道的一个或多个可移动热垫的温度的装置，以承载构造成影响压板温度的热流体。

4. 发明申请

US20110039367A1 MASKED ION IMPLANT WITH FAST-SLOW SCAN 有权
标题翻译：带快速慢扫描的离子植入物
公开(公告)号：US20110039367A1
公开(公告)日：2011-02-17
申请号：US12853698
申请日：2010-08-10
申请人： Nicholas P.T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P.T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01L21/22 , C23C16/00
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

5. 发明授权

US09000446B2 Techniques for processing a substrate 有权
标题翻译：用于处理基材的技术
公开(公告)号：US09000446B2
公开(公告)日：2015-04-07
申请号：US12783873
申请日：2010-05-20
申请人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Steven M. Anella
发明人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Steven M. Anella
IPC分类号： H01L29/15 , H01L21/66 , H01J37/317 , H01J37/20 , H01J37/304 , H01L31/0224 , H01L31/0288 , H01L31/068 , H01L31/18
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/3045 , H01J2237/20235 , H01J2237/31711 , H01L31/022425 , H01L31/0288 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以用用于处理一个或多个基板的系统来实现。该系统可以包括用于产生所需物质的离子的离子源，从离子源产生的离子沿离子束路指向一个或多个衬底; 用于支撑所述一个或多个基板的基板支撑件; 设置在所述离子源和所述衬底支撑件之间的掩模，所述掩模包括限定一个或多个孔的手指，所述离子沿所述离子束路径行进的一部分穿过所述孔; 以及用于检测离子的第一检测器，所述第一检测器相对于所述一个或多个基板固定地定位。

6. 发明申请

US20120043712A1 MECHANISM AND METHOD FOR ALIGNING A WORKPIECE TO A SHADOW MASK 审中-公开
标题翻译：将工件对准阴影掩模的机制和方法
公开(公告)号：US20120043712A1
公开(公告)日：2012-02-23
申请号：US12858131
申请日：2010-08-17
申请人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
发明人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
IPC分类号： H01L21/68 , B23Q3/00
CPC分类号： H01J37/20 , H01J37/3171 , H01J37/32412 , H01J2237/20207 , H01J2237/31711 , Y10T29/49895
摘要： A workpiece support is disclosed in which the platen, and thus the workpiece, can be tilted about at least two axis, which allows gravity to align the workpiece with a shadow mask in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation is completed.
摘要翻译：公开了一种工件支撑件，其中压板以及因此工件可以围绕至少两个轴线倾斜，这允许重力在两个正交方向上将工件与荫罩对准。在一些实施例中，工件支撑件与平行于工件表面的第二轴线结合使用与工件表面正交的旋转轴线。此外，还公开了使用该工件支撑件对准工件的方法。此外，可以利用工件支撑件在植入完成之后将工件从支撑件移除。

7. 发明申请

US20100297782A1 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：US20100297782A1
公开(公告)日：2010-11-25
申请号：US12783873
申请日：2010-05-20
申请人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Steven M. Anella
发明人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Steven M. Anella
IPC分类号： H01L21/66 , H01L21/426
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/3045 , H01J2237/20235 , H01J2237/31711 , H01L31/022425 , H01L31/0288 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以用用于处理一个或多个基板的系统来实现。该系统可以包括用于产生所需物质的离子的离子源，从离子源产生的离子沿离子束路指向一个或多个衬底; 用于支撑所述一个或多个基板的基板支撑件; 设置在所述离子源和所述衬底支撑件之间的掩模，所述掩模包括限定一个或多个孔的手指，所述离子沿所述离子束路径行进的一部分穿过所述孔; 以及用于检测离子的第一检测器，所述第一检测器相对于所述一个或多个基板固定地定位。

8. 发明授权

US08461553B2 Masked ion implant with fast-slow scan 失效
标题翻译：具有快速扫描的掩蔽离子植入物
公开(公告)号：US08461553B2
公开(公告)日：2013-06-11
申请号：US13188837
申请日：2011-07-22
申请人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
发明人： Nicholas P. T. Bateman , Steven M. Anella , Benjamin B. Riordon , Atul Gupta
IPC分类号： H01J37/317 , H01J37/244 , H01J3/07 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译：制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。离子束被引导通过掩模中的多个孔朝向衬底。衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

9. 发明授权

US08354653B2 Techniques for manufacturing solar cells 失效
标题翻译：制造太阳能电池的技术
公开(公告)号：US08354653B2
公开(公告)日：2013-01-15
申请号：US12555917
申请日：2009-09-09
申请人： Steven M. Anella
发明人： Steven M. Anella
IPC分类号： G21K5/00 , H01J37/08
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/31711 , Y10T428/24273 , Y10T428/24298
摘要： Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may be comprise disposing the solar cell downstream of an ion source; disposing a mask between the ion source and the solar cell, the mask including a front surface, a back surface, and at least one aperture extending in an aperture direction from the front surface to the back surface; and directing ions from the ion source to the solar cell along an ion beam path and through the at least one aperture of the mask, where the ion beam path may be non-parallel relative to the aperture direction.
摘要翻译：公开了制造太阳能电池的技术。在一个特定的示例性实施例中，该技术可以包括将太阳能电池设置在离子源的下游; 在所述离子源和太阳能电池之间设置掩模，所述掩模包括前表面，后表面和从所述前表面到所述后表面在孔径方向上延伸的至少一个孔; 并且将离子从离子源引导到太阳能电池沿着离子束路径并通过掩模的至少一个孔，其中离子束路径可以相对于孔径方向不平行。

10. 发明授权

US08202789B2 Implanting a solar cell substrate using a mask 失效
标题翻译：使用掩模植入太阳能电池基板
公开(公告)号：US08202789B2
公开(公告)日：2012-06-19
申请号：US12555005
申请日：2009-09-08
申请人： Steven M. Anella , William Weaver
发明人： Steven M. Anella , William Weaver
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , G03F1/20 , H01J2237/31711 , H01L21/266 , H01L31/022441 , H01L31/028 , H01L31/068 , Y02E10/547
摘要： Various masks for use with ion implantation equipment are disclosed. In one embodiment, the masks are formed by assembling a collection of segments and spacers to create a mask having the desired configuration. This collection of parts is held together with a carrier or frame. In another embodiment, a panel is formed by machining open-ended slots into a substrate, so as to form a comb-shaped device. Two such panels may be connected together to form a mask. In other embodiments, the panels may be used sequentially in an ion implantation process to create interdigitated back contacts. In another embodiment, multiple masks are overlaid so as to create implant patterns that cannot be created effectively using a single mask.
摘要翻译：公开了用于离子注入设备的各种掩模。在一个实施例中，通过组合段和间隔物的集合来形成掩模以产生具有所需构造的掩模。这些零件的集合与载体或框架保持在一起。在另一个实施例中，通过将开口槽加工成衬底形成面板，以便形成梳状装置。两个这样的面板可以连接在一起以形成掩模。在其他实施例中，可以在离子注入工艺中依次使用面板以产生交叉指向的后接触。在另一个实施例中，覆盖多个掩模以便产生不能使用单个掩模有效地产生的植入图案。

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