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1. 发明授权

US5225692A Non-linear quantum semiconductor optical device having a signal-to-noise ratio 失效
标题翻译：具有改善的信噪比的非线性半导体光学器件
公开(公告)号：US5225692A
公开(公告)日：1993-07-06
申请号：US858132
申请日：1992-03-27
申请人： Atsushi Takeuchi , Hideaki Ishikawa , Shunichi Muto
发明人： Atsushi Takeuchi , Hideaki Ishikawa , Shunichi Muto
IPC分类号： G02F1/017 , G02F1/21 , G02F3/02 , H01S3/106 , H01S5/06 , H01S5/183 , H01S5/34
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , G02F3/026 , H01S3/1061 , H01S5/18302 , H01S5/0609 , H01S5/18341 , H01S5/3416
摘要： A non-linear semiconductor optical device comprises a first quantum well layer having discrete quantum levels of carriers including a first quantum level for electrons and a second quantum level for holes with an energy gap corresponding to a wavelength of an incident optical beam; a pair of barrier layers provided above and below the first quantum well layer in contact therewith with a thickness that allows a tunneling of the carriers therethrough for defining a potential well in correspondence to the first quantum well layer; and a second quantum well layer provided in contact with the barrier layers for accepting the carriers that have been created in the first quantum well layer upon excitation by the incident optical beam and escaped therefrom by tunneling through the barrier layer. The second quantum well layer comprises a material that has a conduction band including therein a .GAMMA. valley and an X valley, wherein said .GAMMA. valley is located at an energy level substantially higher than the first quantum level while said X valley is located at an energy level substantially lower than the first quantum level.

2. 发明授权

US5160993A High speed optosemiconductor device having multiple quantum wells 失效
标题翻译：具有多个量子阱的高速光电子器件
公开(公告)号：US5160993A
公开(公告)日：1992-11-03
申请号：US711548
申请日：1991-06-06
申请人： Hideaki Ishikawa , Yoshihiro Sugiyama , Shunichi Muto , Toshio Fujii
发明人： Hideaki Ishikawa , Yoshihiro Sugiyama , Shunichi Muto , Toshio Fujii
IPC分类号： G02F1/017 , G02F1/21 , H01L31/0352
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , H01L31/035236 , H01L31/035281 , Y02E10/50
摘要： In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.

3. 发明授权

US5650611A Light switching method, light switching apparatus and optical semiconductor device 失效
标题翻译：光开关方式，光开关装置和光半导体装置
公开(公告)号：US5650611A
公开(公告)日：1997-07-22
申请号：US514623
申请日：1995-08-14
申请人： Yuji Nishikawa , Atsushi Takeuchi , Shunichi Muto
发明人： Yuji Nishikawa , Atsushi Takeuchi , Shunichi Muto
IPC分类号： G02F1/01 , G02F1/017 , G02F1/35
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/3515 , G02F1/0126
摘要： A light switching apparatus includes an optically non-linear etalon, a first optical part for applying a signal light of a linear polarization to the optically non-linear etalon, and a second optical part for applying a control light of a circular polarization or elliptical polarization to the optically non-linear etalon. The control light varies a refractive index of an optically non-linear substance of the optically non-linear etalon to thereby perform a switching operation on the signal light.
摘要翻译：光开关装置包括光学非线性标准具，用于将线偏振的信号光施加到光学非线性标准具的第一光学部件和用于施加圆偏振或椭圆偏振的控制光的第二光学部件到光学非线性标准具。控制光改变光学非线性标准具的光学非线性物质的折射率，从而对信号光进行切换操作。

4. 发明授权

US5175739A Semiconductor optical device having a non-linear operational characteristic 失效
标题翻译：具有非线性操作特性的半导体光学器件
公开(公告)号：US5175739A
公开(公告)日：1992-12-29
申请号：US758857
申请日：1991-09-12
申请人： Atsushi Takeuchi , Shunichi Muto
发明人： Atsushi Takeuchi , Shunichi Muto
IPC分类号： G02F1/017 , G02F1/21
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , G02F1/01708 , G02F2001/01783 , G02F2001/01791
摘要： An optical semiconductor device comprises a first material layer having a first thickness and formed of a first semiconductor material having a first band gap; a first quantum level pair formed in the first material layer in correspondence to the first thickness with a first energy gap that corresponds to an energy of the incident optical beam to be modulated; a pair of second material layers each having a second, smaller thickness chosen to cause the tunneling of carriers through the second material layer, the second material layer being formed of a second, different semiconductor material having a second, larger band gap and provided at both sides of the first material layer; a third material layer having a third thickness larger than said first thickness and provided at least above or below the second material layer; a second quantum level pair formed in the third material layer in correspondence to the third thickness with a second energy gap that is smaller than the first energy gap; and a carrier annihilating part for annihilating the carriers from the second quantum level pair by inducing a stimulated emission of light having an energy identical with the second energy gap.
摘要翻译：光学半导体器件包括具有第一厚度并由具有第一带隙的第一半导体材料形成的第一材料层; 第一量子级对，形成在与第一厚度对应的第一材料层中，第一能级对应于待调制的入射光束的能量的第一能隙; 一对第二材料层，每个第二材料层具有选择成使载流子穿过第二材料层的第二较小厚度，第二材料层由具有第二较大带隙的第二不同的半导体材料形成，并具有两个第一材料层的侧面; 第三材料层，其具有大于所述第一厚度的第三厚度，并且设置在所述第二材料层的至少上方或下方; 形成在第三材料层中的与第三厚度对应的第二量子级对，第二能级对具有小于第一能隙的第二能隙; 以及载体湮没部分，用于通过诱导具有与第二能隙相同的能量的受激发射的光来湮灭来自第二量子级对的载流子。

5. 发明授权

US4929984A Resonant tunnelling barrier structure device 失效
标题翻译：谐振隧道势垒结构装置
公开(公告)号：US4929984A
公开(公告)日：1990-05-29
申请号：US265814
申请日：1988-11-01
申请人： Shunichi Muto , Tsuguo Inata , Atsushi Takeuchi , Yoshihiro Sugiyama
发明人： Shunichi Muto , Tsuguo Inata , Atsushi Takeuchi , Yoshihiro Sugiyama
IPC分类号： H01L29/201 , H01L21/20 , H01L29/205 , H01L29/88
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/882
摘要： A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, includes an InP substrate and a RTB structure structure. The RTB structure is formed by a first doped layer of InP or In.sub.0.53 GA.sub.0.47 As, a first barrier layer of Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0.ltoreq.x.ltoreq.1, y=0.51+0.05x), a well layer of InP or In.sub.z Ga.sub.1-z As (0.52.ltoreq.z.ltoreq.0.54), a second barrier layer of the AlGaAsSb, and a second doped layer of InP or In.sub.z Ga.sub.1-z As. The layers of the RTB structure are lattice-matched to InP.

6. 发明授权

US6011271A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6011271A
公开(公告)日：2000-01-04
申请号：US678549
申请日：1996-07-09
申请人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
发明人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
IPC分类号： H01L21/20 , H01L21/306 , H01L29/04 , H01L29/12 , H01S5/227 , H01L29/06
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02642 , H01L21/30612 , H01L29/045 , H01L29/125 , H01L29/127 , H01S5/227
摘要： In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
摘要翻译：在半导体器件中，在晶体层中形成开口面积变深的比例变小的凹部，在凹部的底部的至少一个晶面上形成量子结构，边界在其多个侧壁之间形成。在底部形成量子结构的情况下，在其中形成量子箱。如果量子结构形成在凹部的侧壁之间的边界上，则在其中形成量子线。在量子结构形成在凹部的侧壁的情况下，形成二维量子阱。

7. 发明授权

US06235547B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06235547B1
公开(公告)日：2001-05-22
申请号：US09366564
申请日：1999-08-04
申请人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
发明人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02642 , H01L21/30612 , H01L29/045 , H01L29/125 , H01L29/127 , H01S5/227
摘要： In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
摘要翻译：在半导体器件中，在晶体层中形成开口面积变深的比例变小的凹部，在凹部的底部的至少一个晶面上形成量子结构，边界在其多个侧壁之间形成。在底部形成量子结构的情况下，在其中形成量子箱。如果量子结构形成在凹部的侧壁之间的边界上，则在其中形成量子线。在量子结构形成在凹部的侧壁的情况下，形成二维量子阱。

8. 发明授权

US5499206A Semiconductor optical memory device for optical storage of information with increased recording density 失效
标题翻译：用于光学存储具有增加的记录密度的信息的半导体光存储器件
公开(公告)号：US5499206A
公开(公告)日：1996-03-12
申请号：US156979
申请日：1993-11-24
申请人： Shunichi Muto
发明人： Shunichi Muto
IPC分类号： H01L27/10 , B82B1/00 , G11B7/0045 , G11B7/24 , G11C7/00 , G11C11/42 , G11C13/04 , H01L29/06 , H01L31/0352
CPC分类号： B82Y20/00 , G11B7/0045 , G11B7/24 , G11C11/42 , G11C13/041 , G11C7/005 , H01L31/035236
摘要： A semiconductor optical memory device includes a semiconductor layer formed with a plurality of elemental recording areas each having a size generally equal to a wavelength of the optical beam. A plurality of quantized regions are formed in each elemental recording area of the semiconductor layer. Each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions includes a semiconductor material confined in at least two mutually perpendicular directions to form the quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.
摘要翻译：半导体光学存储器件包括形成有多个元素记录区域的半导体层，每个元件记录区域的尺寸大体上等于光束的波长。在半导体层的每个元素记录区域中形成多个量化区域。每个量化区域具有量化能级，并且通过形成具有第一极性的第一类型载流子和具有第二相反极性的第二类型载流子来吸收波长与该量化区域的量化能级相关的光辐射。每个量化区域包括限制在至少两个相互垂直的方向上的半导体材料，以形成量化的能级，并且具有与包括在每个元素记录区域中的其它量化区域不同的光吸收波长。

9. 发明授权

US5130766A Quantum interference type semiconductor device 失效
标题翻译：量子干涉型半导体器件
公开(公告)号：US5130766A
公开(公告)日：1992-07-14
申请号：US389265
申请日：1989-08-03
申请人： Hiroshi Arimoto , Shunichi Muto , Shigehiko Sasa , Makoto Okada , Naoki Yokoyama
发明人： Hiroshi Arimoto , Shunichi Muto , Shigehiko Sasa , Makoto Okada , Naoki Yokoyama
IPC分类号： H01L29/66
CPC分类号： B82Y10/00 , H01L29/66977
摘要： A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into which a carrier is injected and from which a carrier is drained, at least one gate electrode is arranged at the side of the one bifurcated branch conduction channel, and a kind of filter using a resonance tunneling barrier arranged before or upstream of the semiconductor region into which a carrier is injected. The filter passes a carrier having a certain energy legvel to the channel whereby the level of the carrier traveling in the channel becomes equal to realize a good quantum interference effect.

10. 发明授权

US4825264A Resonant tunneling semiconductor device 失效
标题翻译：谐振隧道半导体器件
公开(公告)号：US4825264A
公开(公告)日：1989-04-25
申请号：US81340
申请日：1987-08-04
申请人： Tsuguo Inata , Shunichi Muto , Toshio Fujii
发明人： Tsuguo Inata , Shunichi Muto , Toshio Fujii
IPC分类号： H01L29/88 , H01L29/201 , H01L29/205 , H01L29/737 , H01L29/76 , H01L29/86 , H01L27/12 , H01L29/161 , H01L29/72 , H01L45/00
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/7376 , H01L29/7606 , H01L29/882
摘要： A resonant tunneling semiconductor device having a large peak-to-valley current density J.sub.p /J.sub.v ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z (In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0
摘要翻译：具有大的峰谷电流密度Jp / Jv比的谐振隧穿半导体器件包括InP衬底，与Inp晶格匹配的第一接触化合物半导体，（In0.52Al0.48As）z（In0.52Al0.48As）z的第一势垒层（0.38 Ga 0.47 As）1-z，（0 y = 0.46），（In 0.52 Al 0.48 As ）z-（In 0.53 Ga 0.47 As）1-z，（0

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