专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4436583A Selective etching method of polyimide type resin film 失效
标题翻译：聚酰亚胺树脂薄膜的选择性蚀刻方法
公开(公告)号：US4436583A
公开(公告)日：1984-03-13
申请号：US445576
申请日：1982-11-30
申请人： Atsushi Saiki , Takao Iwayanagi , Saburo Nonogaki , Takashi Nishida , Seiki Harada
发明人： Atsushi Saiki , Takao Iwayanagi , Saburo Nonogaki , Takashi Nishida , Seiki Harada
IPC分类号： H01L21/30 , C08J7/02 , H01L21/027 , H01L21/308 , H01L21/311 , H01L21/312 , H01L23/48 , H05K1/03 , H05K3/00 , B44C1/22 , C03C15/00 , C03C25/06 , B29C17/08
CPC分类号： H01L21/31133 , H01L21/312 , H05K1/0346 , H05K3/0017
摘要： Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.
摘要翻译：本发明公开了一种聚酰亚胺树脂薄膜的选择性蚀刻方法，该方法使用由通过将不饱和酮聚合物如聚甲基异丙烯基酮作为基础树脂添加光敏剂而制备的负型光致抗蚀剂构成的蚀刻掩模和由20〜 40％体积的水合肼和余量的多胺。本发明的蚀刻方法可以通过湿蚀刻提供具有高尺寸精度的聚酰亚胺型树脂膜的图案。

2. 发明授权

US07776495B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07776495B2
公开(公告)日：2010-08-17
申请号：US11725507
申请日：2007-03-20
申请人： Masahito Hiroshima , Takashi Nishida
发明人： Masahito Hiroshima , Takashi Nishida
IPC分类号： G03F7/00
CPC分类号： H01L28/91 , G03F1/00 , H01L27/10808 , H01L27/10852
摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.
摘要翻译：一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。

3. 发明授权

US07208788B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07208788B2
公开(公告)日：2007-04-24
申请号：US10995134
申请日：2004-11-24
申请人： Masahito Hiroshima , Takashi Nishida
发明人： Masahito Hiroshima , Takashi Nishida
IPC分类号： H01L29/73
CPC分类号： H01L28/91 , G03F1/00 , H01L27/10808 , H01L27/10852
摘要： A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.
摘要翻译：一种半导体器件及其制造方法，其中可以增加孔的圆周长度和单元中气缸的机械强度，而不改变单元中图案的占用率。通过在每个掩模图案的中间形成狭缝以不暴露晶片的一部分，晶片的孔径在中间收缩而变为几乎茧形。因此，可以增加孔径的周长，而不改变单元中的掩模图案的占有率。此外，孔的底部的形状也变得几乎茧形，中间有收缩，因此可以提高气缸的机械强度。

4. 发明授权

US5132771A Semiconductor memory device having flip-flop circuits 失效
标题翻译：具有触发电路的半导体存储器件
公开(公告)号：US5132771A
公开(公告)日：1992-07-21
申请号：US503928
申请日：1990-04-04
申请人： Toshiaki Yamanaka , Naotaka Hashimoto , Takashi Hashimoto , Akihiro Shimizu , Koichiro Ishibashi , Katsuro Sasaki , Katsuhiro Shimohigashi , Eiji Takeda , Yoshio Sakai , Takashi Nishida , Osamu Minato , Toshiaki Masuhara , Shoji Hanamura , Shigeru Honjo , Nobuyuki Moriwaki
发明人： Toshiaki Yamanaka , Naotaka Hashimoto , Takashi Hashimoto , Akihiro Shimizu , Koichiro Ishibashi , Katsuro Sasaki , Katsuhiro Shimohigashi , Eiji Takeda , Yoshio Sakai , Takashi Nishida , Osamu Minato , Toshiaki Masuhara , Shoji Hanamura , Shigeru Honjo , Nobuyuki Moriwaki
IPC分类号： G11C11/412 , H01L27/11
CPC分类号： G11C11/4125 , H01L27/1104 , Y10S257/903
摘要： A semiconductor static random access memory having a high .alpha.-ray immunity and a high packing density is provided which is also capable of high-speed operation. A semiconductor memory device comprises static random access memory cells each including a flip-flop circuit. Storage nodes of each flip-flop circuit have respective pn-junctions formed at regions sandwiched between gate electrodes of first insulated gate field effect transistors and gate electrodes of second insulated gate field effect transistors, respectively. The pn-junction has an area smaller than that of a channel portion of the first or second insulated gate field effect transistor. The gate electrode of one of the two first insulated gate field effect transistors and the drain region of the other insulated gate field effect transistor, on one hand, and the drain region of the one insulated gate field effect transistor and the gate electrode of the other insulated gate field effect transistor, on the other hand, are electrically cross-coupled mutually through first and second electrically conductive films, respectively. Also, to increase packing density and enhance immunity to soft error, the gate electrodes of the first and second insulated gate field effect transistors extend substantially in parallel with one another and the channel regions of the first and second insulated gate field effect transistors extend substantially in parallel with one another.
摘要翻译：提供了具有高α射线抗扰度和高封装密度的半导体静态随机存取存储器，其也能够进行高速操作。半导体存储器件包括每个包括触发器电路的静态随机存取存储器单元。每个触发器电路的存储节点分别形成在夹在第一绝缘栅场效应晶体管的栅电极和第二绝缘栅场效应晶体管的栅电极之间的区域处的各pn结。 pn结的面积小于第一或第二绝缘栅场效应晶体管的沟道部分的面积。两个第一绝缘栅场效应晶体管中的一个的栅极电极和另一个绝缘栅场效应晶体管的漏极区域以及一个绝缘栅场效应晶体管的漏极区域和另一个绝缘栅极场效应晶体管的栅极电极另一方面，绝缘栅场效应晶体管分别通过第一和第二导电膜互相交叉耦合。此外，为了增加封装密度并增强对软误差的抵抗力，第一和第二绝缘栅场效应晶体管的栅极彼此基本平行地延伸，并且第一和第二绝缘栅场效应晶体管的沟道区域基本上以彼此平行。

5. 发明授权

US4886904A Polyprenyl composition or compounds and process for the production thereof 失效
标题翻译：聚丙烯基组合物及其制备方法
公开(公告)号：US4886904A
公开(公告)日：1989-12-12
申请号：US081735
申请日：1987-08-05
申请人： Yasuyuki Tanaka , Koichi Ibata , Masao Mizuno , Yoichi Ninagawa , Takashi Nishida
发明人： Yasuyuki Tanaka , Koichi Ibata , Masao Mizuno , Yoichi Ninagawa , Takashi Nishida
IPC分类号： C07C69/007 , C07C17/00 , C07C17/16 , C07C21/215 , C07C27/00 , C07C29/10 , C07C29/32 , C07C33/02 , C07C43/12 , C07C43/15 , C07C43/16 , C07C43/205 , C07C43/303 , C07C43/313 , C07C67/00 , C07C67/58 , C07C271/12 , C07D213/64 , C07D213/70 , C07D277/16 , C07D277/68 , C07D309/12 , C07F7/18 , C07F9/113
CPC分类号： C07D213/64 , C07C271/12 , C07C29/10 , C07C29/32 , C07C317/00 , C07C321/00 , C07C33/02 , C07C381/12 , C07C43/12 , C07C43/15 , C07C43/16 , C07C43/205 , C07C43/303 , C07C43/313 , C07D213/70 , C07D277/16 , C07D277/68 , C07D309/12 , C07F7/1852 , C07F9/113
摘要： A polyprenyl composition consisting essentially of a mixture of polyprenyl compounds represented by the following formula ##STR1## wherein A.sub.1 represents a hydroxyl or acetyloxy group, ##STR2## represents a trans-isoprene unit, ##STR3## represents a cis-isoprene unit, and n is an integer of from 11 to 19, said mixture containing substantial amounts of at least three compounds of formula (I) wherein n represents 14, 15 and 16 respectively as essential ingredients in a total amount of at least 70% by weight based on the weight of the mixture; and new compounds derived from the polyprenyl compounds of formula (I). These composition and compounds are useful for the synthesis of mammalian dolichols. The polyprenyl composition can be prepared by extracting the leaves of Ginkgo biloba or Cedrus deodara with an oil-soluble organic solvent; if required, hydrolyzing the extract; and subjecting the extract to one or more of chromatography, fractional dissolution, fractional refrigerating precipitation and molecular distillation, thereby separating and recovering a fraction having a specified Rf value in silica thin-layer chromatography.
摘要翻译：一种聚丙烯基组合物，其基本上由下式（I）表示的聚异戊二烯基化合物的混合物组成，其中A1表示羟基或乙酰氧基，IMAMA表示反异戊二烯单元，IMAGE表示顺式 - 异戊二烯单元，n为11至19的整数，所述混合物含有大量至少三种式（I）化合物，其中n表示14,15和16，作为必需成分，总量为至少70 基于混合物重量的重量％; 和衍生自式（I）的聚异戊二烯基化合物的新化合物。这些组合物和化合物可用于合成哺乳动物多烯醇。聚乙烯基组合物可以通过用油溶性有机溶剂提取银杏叶或雪松的叶子来制备; 如果需要，水解提取物; 并对提取物进行色谱法，分数溶解，分级冷冻沉淀和分子蒸馏中的一种或多种，从而在二氧化硅薄层色谱中分离和回收具有特定Rf值的级分。

6. 发明授权

US4113968A Process for preparation of substituted cyclopropane carboxylic acids and esters thereof and intermediates of said acids and esters 失效
标题翻译：制备取代环己烷羧酸的方法及其酯及其酸和酯的中间体
公开(公告)号：US4113968A
公开(公告)日：1978-09-12
申请号：US616998
申请日：1975-09-26
申请人： Fumio Mori , Yoshiaki Omura , Takashi Nishida , Kazuo Itoi
发明人： Fumio Mori , Yoshiaki Omura , Takashi Nishida , Kazuo Itoi
IPC分类号： C07C29/38 , C07C29/56 , C07D307/45 , C07C67/30
CPC分类号： C07D307/42 , C07C29/38 , C07C29/56 , C07C67/00 , C07C67/27 , C07C2101/02
摘要： When 1-halogeno-3-alkene-2-ol is reacted with an ortho-carboxylic ester and/or a ketene acetal, a .gamma.-halogeno-.delta.-unsaturated-carboxylic ester is obtained as a main reaction product. When this intermediate is treated with a basic substance, a substituted cyclopropane-carboxylic ester is formed. This ester can be used as an insecticide or an agricultural chemical as it is or after the alcohol residue of the ester has been converted to other alcohol residue.

7. 发明授权

US4053380A 1,1,1-Trihalogeno-4-methylpentenes, method of preparing the same and use of the same in the preparation of 1,1-dihalogeno-4-methyl-1,3-pentadienes 失效
标题翻译： 1,1,1-三甲基-4-甲基戊酸酯，其制备方法及其在制备1,1-二氢-4-甲基-1,3-苯二甲酸中的用途
公开(公告)号：US4053380A
公开(公告)日：1977-10-11
申请号：US676517
申请日：1976-04-13
申请人： Yoshiji Fujita , Yoshiaki Omura , Fumio Mori , Kazuo Itoi , Takashi Nishida , Yoshin Tamai , Sukeji Aihara , Takeo Hosogai , Fumio Wada
发明人： Yoshiji Fujita , Yoshiaki Omura , Fumio Mori , Kazuo Itoi , Takashi Nishida , Yoshin Tamai , Sukeji Aihara , Takeo Hosogai , Fumio Wada
IPC分类号： C07C17/00 , C07C17/10 , C07C17/25 , C07C17/278 , C07C17/35 , C07C17/358 , C07C17/361 , C07C21/02 , C07C21/04 , C07C29/62 , C07C31/36 , C07C43/12 , C07C43/174 , B01J1/10
CPC分类号： C07C17/25 , C07C17/00 , C07C17/10 , C07C17/278 , C07C17/35 , C07C17/358 , C07C17/361 , C07C17/363 , C07C21/02 , C07C21/04 , C07C29/62 , C07C31/36 , C07C43/12 , C07C43/174
摘要： 1,1,1-Trihalogeno-4-methyl pentenes and 1,1-dihalogeno-4-methyl-1,3-pentadienes are produced. These compounds are of value as intermediates for the production of pyrethrin analogs which are of use as insecticides or agricultural chemicals.

8. 发明授权

US4026960A 2,7,10,15,18,23-Hexamethyltetra-cosane 失效
标题翻译： 2,7,10,15,18,23-六甲基四亚甲基
公开(公告)号：US4026960A
公开(公告)日：1977-05-31
申请号：US486782
申请日：1974-07-09
申请人： Takashi Nishida , Yoichi Ninagawa , Kazuo Itoi , Yoshiaki Omura , Yoshin Tamai , Takeo Hosogai , Yoshiji Fujita
发明人： Takashi Nishida , Yoichi Ninagawa , Kazuo Itoi , Yoshiaki Omura , Yoshin Tamai , Takeo Hosogai , Yoshiji Fujita
IPC分类号： A61K8/31 , A61Q19/00 , C07C1/00 , C07C1/22 , C07C1/24 , C07C9/12 , C07C9/14 , C07C9/22 , C07C11/02 , C07C27/00 , C07C29/17 , C07C29/42 , C07C31/125 , C07C33/048 , C07C67/00 , C10M169/00 , C07C9/16
CPC分类号： A61Q19/00 , A61K8/31 , C07C1/22 , C07C9/22 , C10M3/00 , C10M2203/02 , C10M2203/022 , C10M2203/024 , C10M2203/04 , C10N2240/06
摘要： 2,7,10,15,18,23-Hexamethyltetracosane is a novel compound. This compound is prepared [1] by hydrogenating 2,7,10,15,18,23-hexamethyltetracosa-1,6,18,23-tetraene-11,13-diyne-10,15-diol [itself a novel compound] or 2,7,10,15,18,23-hexamethyltetracosa-11,13-diyne-10,15-diol, dehydrating the hydrogenated intermediates, and thence hydrogenating the dehydrated precursors, or [2] by selectively, partially hydrogenating the said 10,15-diol compounds and thence hydrogenolyzing the precursor diols, or [3] by hydrogenolyzing the said 10,15-diol compounds, or [4] by hydrogenolyzing the hydrogenated intermediates of the reaction [1]. The compound, 3,6,11-trimethyl-undeca-6,11-dien-1-yl-3-ol, a starting material intermediate, is also a novel compound.
摘要翻译： 2,7,10,15,18,23 - 六甲基二十六烷是一种新型化合物。该化合物通过氢化2,7,10,15,18,23-六甲基二十四-1,6,18,23-四烯-11,13-二炔-10,15-二醇[本身为新化合物]制备[1] 或2,7,10,15,18,23-六甲基二十四碳-1,11,13-二炔-10,15-二醇，使氢化中间体脱水，然后氢化脱水前体，或[2]通过选择性地部分氢化所述然后通过氢化前体二醇，或[3]通过氢化所述10,15-二醇化合物或[4]，使反应的氢化中间体氢化[1]。化合物3,6,11-三甲基 - 十一碳烯-6,11-二烯-1-基-3-醇，起始材料中间体，也是一种新型化合物。

9. 发明授权

US4011277A Preparation of squalane by hydrogenolysis 失效
标题翻译：通过氢化法制备平均分子
公开(公告)号：US4011277A
公开(公告)日：1977-03-08
申请号：US454694
申请日：1974-03-25
申请人： Takashi Nishida , Yoichi Ninagawa , Kazuo Itoi , Yutaka Omura , Haruo Nagai
发明人： Takashi Nishida , Yoichi Ninagawa , Kazuo Itoi , Yutaka Omura , Haruo Nagai
IPC分类号： C07C20060101 , C07C1/22 , C07C9/14 , C07C9/16 , C07C9/22 , C07C11/22 , C07C29/00 , C07C31/00 , C07C31/02 , C07C31/20 , C07C33/04
CPC分类号： C10M2203/02 , C10M2203/022 , C10M2203/024 , C10M2203/04 , Y10S585/934
摘要： Novel 2,6,10,15,19,23-hexamethyltetracosane-10,15-diol derivatives. Such derivatives are prepared by hydrogenation of 2,6,10,15,19,23-hexamethyltetracosa-11,13-diyne-10,15-diol derivatives and used as starting materials for preparing squalane.

10. 发明授权

US4006193A Isomerization of the unsaturated alcohols 失效
标题翻译：不饱和醇的异构化
公开(公告)号：US4006193A
公开(公告)日：1977-02-01
申请号：US340585
申请日：1973-03-12
申请人： Yoichi Ninagawa , Takashi Nishida , Kazuo Itoi
发明人： Yoichi Ninagawa , Takashi Nishida , Kazuo Itoi
IPC分类号： C07C29/56 , C07C29/80 , C07C33/025 , C07C33/05 , C07C33/02
CPC分类号： C07C403/08 , C07C29/56 , C07C29/80 , C07C33/025 , C07C2101/14 , C07C2101/16
摘要： Unsaturated alcohols represented by the general formulas (I) and (II) below ##STR1## wherein R is a substituted or unsubstituted hydrocarbon radical, R.sub.2 and R.sub.3 are hydrogen or lower alkyl groups, and R and R.sub.2 may be linked together are mutually isomerized in the presence of a catalyst comprising a transition metal compound of Groups V, VI and VII of the Mendeleev Periodic Table.
摘要翻译：由下式（I）和（II）表示的不饱和醇，其中R是取代或未取代的烃基，R2和R3是氢或低级烷基，R和R2可以是在包含门多列夫周期表的V，VI和VII族过渡金属化合物的催化剂的存在下相互异构化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式