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1. 发明申请

US20050199586A1 Resist removal method and semiconductor device manufactured by using the same 审中-公开
标题翻译：抗蚀剂去除方法和使用其制造的半导体器件
公开(公告)号：US20050199586A1
公开(公告)日：2005-09-15
申请号：US11052911
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/3065 , B44C1/22 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J37/32477 , H01J2237/3342
摘要： In resist removal using hydrogen gas, the specific dielectric constant of an insulating film of a low dielectric constant can be reduced and the resist removal speed can be increased. A wafer is loaded on a rotary table in a chamber, and hydrogen mixed gas is introduced into a discharge tube from a gas introduction port, and a μ wave is supplied into the discharge tube via a waveguide, and the mixed gas is excited by plasma, and a hydrogen active species is generated. And, a neutral radical (hydrogen radical) of hydrogen atoms or hydrogen molecules is introduced into the chamber from a gas transport pipe and a resist mask on the surface of the wafer is removed. Here, by a substrate heating system for heating the rotary table and controlling the temperature, the temperature of the wafer is set within the range from 200° C. to 400° C. The processed gas after resist removal is ejected from the chamber through a gas ejection port by an exhaust system.
摘要翻译：在使用氢气的抗蚀剂去除中，可以降低介电常数低的绝缘膜的比介电常数，并且可以提高抗蚀剂去除速度。将晶片装载在室内的旋转台上，将氢气混合气体从气体导入口引入放电管，经由波导将mu波供给到放电管内，混合气体被等离子体激发，生成氢活性物质。并且，从气体输送管将氢原子或氢分子的中性自由基（氢基团）引入到室中，并且去除晶片表面上的抗蚀剂掩模。这里，通过用于加热旋转台并控制温度的基板加热系统，将晶片的温度设定在200℃至400℃的范围内。抗蚀剂除去后的处理气体通过一个气体排出口由排气系统。

2. 发明申请

US20050208756A1 Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device 失效
标题翻译：从而除去抗蚀剂，半导体器件的方法以及制造半导体器件的方法
公开(公告)号：US20050208756A1
公开(公告)日：2005-09-22
申请号：US11052987
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/3065 , G03F7/42 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/427 , H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/7681
摘要： Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.
摘要翻译：公开了一种去除抗蚀剂的方法，该方法防止低介电常数绝缘膜的介电常数增加并防止抗蚀剂残留。使用抗蚀剂掩模，保护绝缘膜，MSQ膜和构成ILD的氧化硅膜，依次进行RIE干式蚀刻，并且在用于处理的基板的表面上形成通孔以到达用于处理的基板上的扩散层。随后的过程包括由于通过等离子体激发NH 3气体的等离子体气体的先前蚀刻，除去形成在用于处理表面的基板上的改性层，以及通过产生氢活性物质的照射完全除去抗蚀剂掩模的另一蚀刻通过氢气和惰性气体，例如氦气或氩气。

3. 发明授权

US07538038B2 Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device 失效
标题翻译：从而除去抗蚀剂，半导体器件的方法以及制造半导体器件的方法
公开(公告)号：US07538038B2
公开(公告)日：2009-05-26
申请号：US11052987
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Jae Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Jae Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/47
CPC分类号： G03F7/427 , H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/7681
摘要： Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.
摘要翻译：公开了一种去除抗蚀剂的方法，该方法防止低介电常数绝缘膜的介电常数增加并防止抗蚀剂残留。使用抗蚀剂掩模，保护绝缘膜，MSQ膜和构成ILD的氧化硅膜，依次进行RIE干式蚀刻，并且在用于处理的基板的表面上形成通孔以到达用于处理的基板上的扩散层。随后的过程包括由于使用等离子体气体等离子体激发NH 3气体进行的先前的蚀刻，除去形成在基板上用于处理表面的改性层，以及通过氢气和惰性气体产生的氢活性物质的照射完全除去抗蚀剂掩模的另一种蚀刻例如氦气或氩气。

4. 发明申请

US20050170102A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050170102A1
公开(公告)日：2005-08-04
申请号：US11036138
申请日：2005-01-18
申请人： Isao Matsumoto , Naofumi Ohashi , Kaori Misawa , Shuji Sone
发明人： Isao Matsumoto , Naofumi Ohashi , Kaori Misawa , Shuji Sone
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , H05H1/00
CPC分类号： H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02315 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76835
摘要： A method for manufacturing a semiconductor device comprises: exposing a surface of a substrate to plasma; and forming an insulating film containing a low dielectric constant material on the surface of the substrate. A method for manufacturing a semiconductor device comprises: forming a modified layer by exposing a surface of a substrate to plasma; and forming an insulating film containing a low dielectric constant material on the modified layer. A method for manufacturing a semiconductor device comprises: forming an adhesion enhancement layer on a substrate; exposing a surface of the adhesion enhancement layer to plasma; and forming a first insulating film on the adhesion enhancement layer.
摘要翻译：一种制造半导体器件的方法包括：将衬底的表面暴露于等离子体; 以及在所述基板的表面上形成含有低介电常数材料的绝缘膜。一种制造半导体器件的方法包括：通过将衬底的表面暴露于等离子体来形成改性层; 以及在所述改性层上形成含有低介电常数材料的绝缘膜。一种制造半导体器件的方法包括：在衬底上形成粘合增强层; 将粘附增强层的表面暴露于等离子体; 以及在所述粘合增强层上形成第一绝缘膜。

5. 发明授权

US07205030B2 Method for forming porous film 有权
标题翻译：多孔膜形成方法
公开(公告)号：US07205030B2
公开(公告)日：2007-04-17
申请号：US10812420
申请日：2004-03-30
申请人： Kaori Misawa , Isao Matsumoto , Naofumi Ohashi , Koichi Abe , Haruaki Sakurai
发明人： Kaori Misawa , Isao Matsumoto , Naofumi Ohashi , Koichi Abe , Haruaki Sakurai
IPC分类号： C05D3/02
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/31695
摘要： After applying a film-forming composition containing a polysiloxane, a pore-forming agent, an onium salt, and a solvent onto a semiconductor substrate, the solvent is evaporated from the film-forming composition in a first heat treatment. Then, a second heat treatment is carried out in an inert-gas atmosphere to promote the polymerization of the polysiloxane and thus form a polysiloxane resin film. Thereafter, a third heat treatment is carried out in an oxidizing-gas ambient to form pores in the polysiloxane resin film.
摘要翻译：在半导体基板上涂布含有聚硅氧烷，成孔剂，鎓盐和溶剂的成膜组合物之后，在第一次热处理中从成膜组合物中蒸发掉溶剂。然后，在惰性气体气氛中进行第二次热处理，促进聚硅氧烷的聚合，从而形成聚硅氧烷树脂膜。此后，在氧化气体环境中进行第三次热处理，以在聚硅氧烷树脂膜中形成孔。

6. 发明授权

US08779808B2 Output circuit for a bus 有权
标题翻译：总线输出电路
公开(公告)号：US08779808B2
公开(公告)日：2014-07-15
申请号：US11984714
申请日：2007-11-21
申请人： Isao Matsumoto , Hidekazu Kikuchi
发明人： Isao Matsumoto , Hidekazu Kikuchi
IPC分类号： H03B1/00 , H03K3/00
CPC分类号： G06F13/4072
摘要： An output circuit for a bus whose output node is connected to a bus, including a first current source connected to a first reference potential, a first semiconductor switching element connected between the first current source and the output node, a current control circuit for controlling the first semiconductor switching element such that the first current source and the output node are connected when a voltage of the output node is lower than a reference voltage, and the first current source and the output node are disconnected when a voltage of the output node is higher than the reference voltage, and a voltage generating circuit which is connected between the output node and a second reference potential, and includes a second semiconductor switching element turned on/off based on an output control signal.
摘要翻译：一种用于总线的输出电路，其输出节点连接到总线，包括连接到第一参考电位的第一电流源，连接在第一电流源和输出节点之间的第一半导体开关元件，用于控制第一半导体开关元件，使得当输出节点的电压低于参考电压时，第一电流源和输出节点连接，并且当输出节点的电压较高时，第一电流源和输出节点断开以及连接在输出节点和第二参考电位之间的电压产生电路，并且包括基于输出控制信号导通/截止的第二半导体开关元件。

7. 发明授权

US08494698B2 Hybrid system control apparatus and hybrid system control method 有权
标题翻译：混合系统控制装置和混合动力系统控制方法
公开(公告)号：US08494698B2
公开(公告)日：2013-07-23
申请号：US12451344
申请日：2008-10-02
申请人： Hiroki Murata , Isao Matsumoto , Naofumi Magarida , Akira Yamashita , Hiroyuki Haga , Takenori Saoda
发明人： Hiroki Murata , Isao Matsumoto , Naofumi Magarida , Akira Yamashita , Hiroyuki Haga , Takenori Saoda
IPC分类号： B60L9/00 , B60L11/00 , G05D1/00 , G05D3/00 , G06F7/00 , G06F17/00
CPC分类号： B60W20/15 , B60K6/445 , B60K11/04 , B60K11/06 , B60K2001/003 , B60L2240/445 , B60W10/06 , B60W10/08 , B60W20/00 , B60W30/194 , B60W2510/0671 , B60W2510/0676 , B60W2520/10 , B60W2550/12 , B60Y2400/435 , F01P2037/02 , F01P2060/02 , F02B29/0425 , F02B29/0493 , F02B37/00 , F28D1/0435 , Y02T10/146 , Y02T10/6239 , Y02T10/6286
摘要： A hybrid system control apparatus is provided in which an intercooler is disposed upstream of the motor cooling radiator in a flow path of the ambient air flowing in an engine compartment, and/or is disposed such that at least a portion of the intercooler and a portion of the motor cooling radiator contact each other. The hybrid system control apparatus includes a warm-up portion that increases temperature of the boost air by controlling a load of the engine in cold start of a hybrid system such that the boost pressure from the forced air induction device is equal to or higher than a target boost pressure.
摘要翻译：提供了一种混合式系统控制装置，其中中冷器位于在发动机室内流动的环境空气的流路中的电动机冷却散热器的上游，和/或设置成使得至少一部分中间冷却器和一部分的电机散热片相互接触。混合动力系统控制装置包括预热部分，其通过在混合动力系统的冷起动中控制发动机的负载来增加升压空气的温度，使得来自强制空气感应装置的增压压力等于或高于目标增压压力。

8. 发明授权

US08433836B2 Centralized master-slave-communication control system and method with multi-channel communication on the same line 失效
标题翻译：集中式主从通讯控制系统及方法在同一线路上进行多通道通讯
公开(公告)号：US08433836B2
公开(公告)日：2013-04-30
申请号：US12805906
申请日：2010-08-24
申请人： Isao Matsumoto , Hidekazu Kikuchi , Ryuichiro Kawai
发明人： Isao Matsumoto , Hidekazu Kikuchi , Ryuichiro Kawai
IPC分类号： G06F13/00
CPC分类号： H04L12/403
摘要： Disclosed herein is a communication centralized control system including one master device; a communication bus; and a plurality of slave devices configured to be connected to the master device by the communication bus, wherein the master device and the plurality of slave devices are capable of bidirectional communication via the communication bus, and different channels are allocated to at least polling communication from the master device to the slave devices and interrupt communication from the slave devices to the master device, and communication is carried out with multiplexing on the same line.
摘要翻译：本文公开了一种包括一个主设备的通信集中控制系统; 通讯总线以及多个从设备，被配置为通过通信总线连接到主设备，其中主设备和多个从设备能够经由通信总线进行双向通信，并且将不同的信道分配给至少轮询通信主设备到从设备，并且从从设备到主设备的中断通信，并且在同一线路上进行多路复用的通信。

9. 发明申请

US20110093635A1 Communication centralized control system and communication centralized control method 失效
标题翻译：通信集中控制系统和通信集中控制方法
公开(公告)号：US20110093635A1
公开(公告)日：2011-04-21
申请号：US12805906
申请日：2010-08-24
申请人： Isao Matsumoto , Hidekazu Kikuchi , Ryuichiro Kawai
发明人： Isao Matsumoto , Hidekazu Kikuchi , Ryuichiro Kawai
IPC分类号： G06F13/00
CPC分类号： H04L12/403
摘要： Disclosed herein is a communication centralized control system including one master device; a communication bus; and a plurality of slave devices configured to be connected to the master device by the communication bus, wherein the master device and the plurality of slave devices are capable of bidirectional communication via the communication bus, and different channels are allocated to at least polling communication from the master device to the slave devices and interrupt communication from the slave devices to the master device, and communication is carried out with multiplexing on the same line.
摘要翻译：本文公开了一种包括一个主设备的通信集中控制系统; 通讯总线以及多个从设备，被配置为通过通信总线连接到主设备，其中主设备和多个从设备能够经由通信总线进行双向通信，并且将不同的信道分配给至少轮询通信主设备到从设备，并且从从设备到主设备的中断通信，并且在同一线路上进行多路复用的通信。

10. 发明申请

US20100055548A1 Secondary Battery with a Spirally-Rolled Electrode Group 有权
标题翻译：带有螺旋状电极组的二次电池
公开(公告)号：US20100055548A1
公开(公告)日：2010-03-04
申请号：US12550637
申请日：2009-08-31
申请人： Isao Matsumoto , Hua Zhou , Koji Kuwana
发明人： Isao Matsumoto , Hua Zhou , Koji Kuwana
IPC分类号： H01M6/10
CPC分类号： H01M2/18 , H01M2/0413 , H01M2/263 , H01M10/0413 , H01M10/0431 , H01M10/0468
摘要： An electrode group E in which a positive electrode 1 and a negative electrode 2 are spirally-rolled interposing a separator 3 is contained in a bottomed cylindrical can 4. A metal exposure portion 1a provided on an end surface of the positive electrode 1 of the electrode group E or a metal-made current collecting plate 9 electrically connected to the metal exposure portion 1a (called a current collecting portion of a positive electrode) and a cover body 8 also functioning as a positive electrode terminal are electrically connected by a metal lead plate 5. One or more electrolyte resistant metal pressers 10 are arranged and electrically connected between the current collecting portion of the positive electrode and the cover body 8. The electrode group E is applied pressure by the cover body 8 and the bottom portion 4a of the bottomed cylindrical can 4.
摘要翻译：其中正极1和负极2螺旋卷绕插入隔板3的电极组E包含在有底圆筒形罐4中。设置在电极的正极1的端面上的金属曝光部分1a 电气连接到金属曝光部分1a（称为正电极的集电部分）的组E或金属制集电板9以及也用作正极端子的盖体8通过金属引线板电连接一个或多个耐电解质的金属按压件10布置并电连接在正电极的集流部分和盖体8之间。电极组件E被盖体8和底部部分4a的底部部分4a施加圆筒罐4。

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